GaN MMICs on SiC Substrate
GaN MMICs on SiC Substrate
X-Band Power Amplifier
2-Stage X-Band Power Amplifier with 16 W Output Power
Animated Simulation
Simulated Electron Distribution of a GaN-HEMT at Different Drain Voltages

GaN Electronics

Goal of the business area GaN electronics is to develop and reproducibly fabricate GaN-based electronic devices. The activities focus on microwave power devices and fast high-power switches for applications in mobile and satellite communications as well as in generally highly efficient power electronics. Devices are realized as discrete power devices, power bar structures and MMICs on SiC and sapphire substrates.

All developments are based on the synergetic interaction between:

  • Device simulation (physical, thermal)
  • Epitaxy
  • Processing technology
  • Microwave design and characterization
  • Lifetime measurements and degradation analysis

Many of FBH's application oriented research and development activities are aiming to be transferred to an industrial environment. In this context, the institute has intensive cooperative relations with the company United Monolithic Semiconductors (UMS). Furthermore, Berlin Microwave Technologies (BeMiTec), an FBH spin-off, provides GaN prototypes. This enables potential customers to evaluate the devices at an early stage for innovative systems.

Head of Business Area

Dr.-Ing. Joachim Würfl
 Phone +49.30.639- 2690
 Fax +49.30.6392-2685
 EMail joachim.wuerfl(at)fbh-berlin.de