Microwave Transistors & MMIC

The extraordinary material properties of gallium nitride heterostructures allow for high-speed field effect devices with simultaneous high-charge carrier concentration and high breakdown voltage. These properties are required for very competitive microwave power devices such as discrete power transistors and monolithically integrated microwave ICs (MMIC).

In this connection, FBH currently develops the following microwave devices:

• Practically dispersion-free devices due to optimized epitaxial layer design, channel passivation and integrated field plates
• Power devices engineered for high linearity and memory effect reduction
• Compact power bar devices due to thermally and electrically optimized packaging: Output power of up to 100 W demonstrated at 2 GHz.
• High-power density values demonstrate the potential of FBH's GaN technology: 11 W/mm @ 60 V drain voltage and 2 GHz (device geometry 2x125 µm)

• Multistage X-band power amplifiers:
  Two stage amplifier delivered 16 W cw at 8 GHz at an PAE of 35%
• Robust low noise amplifiers:
  Long term input robustness of 33 dBM demonstrated for C-band LNA
• Switchmode amplifiers at microwave frequencies:
  93% PAE of switching power module at 450 MHz