Reliability Characterization Techniques

Due to the increasing maturity of GaN device reliability characterization as well as the analysis and understanding of possible degradation mechanisms are of increasing importance for development and industrialization of GaN devices.

• Tests for device pre-selection:
  Separation of devices with "infant mortality"
• On-wafer stress tests for fast robustness determination of devices:
  Gradual increase of stress conditions until catastrophic degradation of device
• Long term DC and RF reliability tests:
  Reliability tests at different channel temperatures and different biasing conditions, extrapolation of MTTF

• Wafer probers for simultaneous on-wafer reliability tests of up to 5 transistors
• Long term DC reliability test systems for performing reliability measurements with combined thermal and electrical stress of up to 142 devices, up to 1100 V bias voltage and up to 50 W dissipated power per device
• High frequency reliability measurement setup for L and X band for 8 devices with up to 200 W dissipating power per device