GaN-Based High-Power Lasers

The emphasis of the research activities is the development of GaN-based high-power laser diodes for the wavelength range around 405 nm. Applications for such such lasers can be found, e.g. within the fields of

• Material processing
• Rapid prototyping, tooling und Manufacturing (e.g. stereo lithography)
• Printing industry (e.g. Computer-to-Plate)
• Medical technology
• Bio analytics

The research activities include, e.g. MOVPE of InGaN multiple quantum well (MQW) structures, growth on low defect density GaN substrates, process development for facet cleaving, the realization of dielectric layers for highly reflective mirror coatings of laser facets and the development of broad area stripe and ridge waveguide laser structures. In the context of the project first 405 nm laser diodes on GaN substrates with threshold current densities of 4.2 kA/cm2 and output peak output of 400 mW have been realized. An important goal of the work is cw operation of GaN laser diodes and the development of more complex laser structures such as semiconductor disk lasers.