PUI Characteristics and Beam Profiles
Determination of characteristics of laser diodes before and after packaging on heat sink
Standard characterization
- Material uniformity across array of emitters (bars)
- Power-current and voltage-current characteristics
- Measurement of typical temperatures T0 and T1
- Determination of thermal resistance Rth of lasers after packaging
- Measurements of degree of polarisation
Spectral characterization
- Measurement of spectra and line width
Determination of characteristics of BA, RW and tapered laser diodes
- Near field, far field and beam waist
- Beam quality (M2)
- Power-current and voltage-current characteristics of a tapered laser (wavelength 730 nm) for medical approaches
- Far field characteristics of a tapered laser (wavelength 730 nm) for medical approaches
Dynamics
Research on the time behavior of diode lasers
- Pulse generation on the time scale of 5 ps – 100 ns due to:
- gain switching of single section laser
- q-switching of multi section lasers
- mode locking of monolithic multi section laser
- Investigation of time behavior:
- Mean power, pulse peak power
- Optical spectra
- Beam quality
- Pulse characterization by using:
- Fast photo diode (40 ps – dc)
- Streak-camera (2 ps – 50 ns)
- Autocorrelator (200 fs – 50 ps)
- Gain switching of a DFB laser diode
- Measured RF-signal for passive (black and red) and active (blue) mode-locking
- 4 GHz-pulse generation
Reliability
- Aging tests of laser diodes and laser bars up to t ≤ 10000 h
- Burn-in tests
- Non-destructive analytics:
- Electroluminescence
- Facet microscopy
- Spectral modulation
Contact | PD Dr. Bernd Sumpf | |
|---|---|---|
| Phone | +49.30.6392-2659 | |
| Fax | +49.30.6392-2642 | |
| bernd.sumpf(at)fbh-berlin.de | ||