Implantation

The aim of ion implantation is to modify the properties of the target material. Penetrating ions change the electrical and mechanical properties of the implanted area. The penetration depth and the lateral and vertical distribution of the ions can be simulated by Monte Carlo Simulation.

Technology:

• Implantation energies from 15 keV to 400 keV
• Implantation sources for gases, liquids and solid materials up to 250 amu
• Activation of the implantation by thermal treatment (Rapid Thermal Annealing)
• Lateral structuring by photo resists