Ka-Band GaN MMICs

The FBH Ka-band GaN MMIC process is in development currently. It bases on a novel slanted gate technology with a gate foot-print of 100 nm. Ka-Band LNAs and K-band power amplifiers have already been demonstrated
 

  • K-band amplifiers with the following specs are in development: 10 W at 20 GHz; Power-Added-Efficiency (PAE) > 40%
  • Low-noise amplifiers (LNA) with demonstrated noise figure of  NF = 3 dB at 30 GHz  
Processed GaN wafer
Processed GaN wafer