Microwave Power Transistors

Output power
Efficiency (PAE) and Gt
Load-pull measurements of packaged powerbar demonstrating Pout of 70 W and 70% PAE at f = 2.0 GHz, and Pout of 59 W and 52% PAE at f = 3.5 GHz

Compact microwave powerbar devices are fabricated using the 4-inch GaN process based on 500 nm gate length technology.

The power transistors are practically dispersion-free owing to the optimized epitaxial layer design, channel passivation, integrated source-connected field plates, and novel sputtered gate technology.

The power devices are engineered for high linearity and memory-effect reduction. Due to thermally and electrically optimized packaging the compact powerbars deliver:

  • output power up to 110 W CW at f = 2 GHz.
  • Pout = 85 W and 60% PAE at 2 GHz and 40 V operation voltage for standard design of the power transistor.