Epitaxy Arsenides & Phosphides
The deposition of single-crystalline compound semiconductor layers (epitaxy) with well-defined optical and electrical properties are the basis for GaAs- and InP-based microelectronics and optoelectronics.
The arsenides & phosphides group is focused on the development of semiconductor layers for optoelectronics. Layers for high-power laser diodes with very high beam quality are available in the wavelength range between 635 nm and 1220 nm. By applying two-step growth processes, structures with gratings for wavelength stabilization are fabricated as well. In cooperation with customers, FBH also develops saturable absorber structures for use in pulsed laser systems.
All these structures require a very good material quality, well-controlled interfaces and precise adjustment of composition and doping of individual semiconductor layers. The development and optimization of deposition processes for the material systems (Al,Ga)As, (Ga,In)(As,P), and (Al,Ga,In)P yielding the required high layer quality is the mission of the group. Using these processes, layer structures are supplied for internal usage as well as for external partners and customers.
The epitaxial growth technique is metal organic vapor phase epitaxy (MOVPE) using TMGa, TEGa, TMIn, TMAl, arsine, phosphine, disilane, DMZn, and CBr4 as sources. An accurate control of the purity of these starting materials is essential for the high quality of FBH's layer structures.
Two MOVPE systems of the type Aixtron AIX 200/4 with 3×2" or 1×3"/4" capacity are used for exploratory work and production in small volumes. A production-scale reactor AIX 2400G3 (5×4") is used for larger volumes. The systems are equipped with in-situ tools for optical growth control by reflectance and reflectance anisotropy spectroscopy (RAS). FBH extensively uses these tools and closely cooperates with LayTec GmbH on the development of these techniques.