Mounting of Microwave Devices

The FBH mounts single GaN-microwave transistors with powers up to 100 W as well as MMICs (up to the mm-wavelength range) which have been processed in-house. The devices are characterized, aged, and delivered to cooperating partners.

  • GaN transistors in housing
    [+] GaN transistors in housing
  • Wire-bonded GaN transistor chip
    [+] Wire-bonded GaN transistor chip
  • Module with 2 class-S power amplifier MMICs
    [+] Module with 2 class-S power amplifier MMICs for the wireless infrastructure
  • GaN power diode in housing
    [+] GaN power diode in housing
  • Module with GaN MMIC for the wireless infrastructure
    [+] Module with GaN MMIC for the wireless infrastructure

Challenges in the assembly of these devices consist in:

  • Thermal management in power components (ensuring of a low thermal resistance)
  • Packaging for high powers and high frequencies simultaneously (handling of high currents, avoiding of parasitic effects)
  • Electrical stability (oscillation free)
  • Wire bonding with high current load of the bonds

Please find further technical details and performance figures on electronic devices from the FBH here.