Joint Lab GaN Optoelectronics

The Joint Lab GaN Optoelectronics develops and studies innovative light emitters based on group III-nitrides. Research is conducted in close cooperation with TU Berlin within the Joint Lab. The materials system AlN-GaN-InN covers an extremely wide wavelength range from the far ultraviolet (UV) to the near infrared, including the entire visible spectrum. This feature makes InAlGaN semiconductors interesting for numerous new application fields. FBH particularly works on the realization of diode lasers for the blue-violet spectral region and light emitting diodes (LED) in the near and far UV. The activities include device simulation and design, epitaxy of InAlGaN heterostructures, as well as fabrication, mounting and characterization of device chips.

  • wafer with UV LEDs
    [+] 2" wafer with UV LEDs
  • RW laser diode
    [+] Ridge waveguide diode laser with emission at 440 nm
  • UVB LED
    [+] UVB LED on TO header
  • UV LED
    [+] UV LED module

FBH uses established basic technologies in the area of III-V compound semiconductors. The main target of our present research and development activities is to advance these technologies in a way that GaN diode lasers and UV LEDs can be tailored for novel applications. Atom spectroscopy and bioanalytics are exemplary  application fields for GaN diode lasers, whereas UV LEDs target areas  such as water disinfection, medical engineering and gas sensing in the deep UV-C range.