Single Emitter Broad Area Laser

Functional principle

Schematic representation of a single emitter broad area laser
Schematic representation of a single emitter broad area laser

High output power is achieved by electrically pumping large area devices with emitting aperture of 30 ... 1200 µm and resonator length up to 8 mm.

  • Broad area laser on submount
    [+] Broad area laser on submount
  • Broad area laser with double-side cooling
    [+] Broad area laser with double-side cooling
  • Broad area laser on CCP
    [+] Broad area laser on CCP
  • Broad area laser on C-Mount
    [+] Broad area laser on C-Mount

Applications

  • Remote sensing
  • Illumination
  • Pumping of solid state, fiber and gas lasers
  • Measurement and control engineering
  • Medical technology
  • Sensors
  • Material processing

Wavelength

630 nm to 1200 nm

Chip technology

  • Semiconductor layers by means of MOVPE
  • Monolithic gratings via surface etch technology or two step-epitaxial techniques
  • Contact windows by
    • projection lithography
    • implantation and isolating layers
    • deposition of metalization
  • Thinning
  • Scribing, breaking and cleaving
  • Facet coating and passivation with extremely long lifetimes

Assembly

  • Hard, gold-tin soldered packaging
  • Open heat sinks (C-Mount)
  • Conduction cooled package (CCP)
  • Expansion matched submounts
  • Integrated double-side heat-sinking
  • Additional FAC lenses (fast axis collimator) and external gratings possible

Typical data

  • NIR range:
    • up to 30 W cw output power depending on wavelength and geometry [publication]
    • up to 60 W output power in quasi-continuous wave mode (1 ms pulse width, publication)
    • peak power density of over 110 MWcm-2 driven by short pulse source [publication]
    • conversion efficiency > 65% at 10 W output from devices with 90 µm emission aperture [publication]
    • 10 W reliable output power from monolithically grating stabilized devices with 90 µm emission aperture [publication]
    • high power laser with vertical far field of < 16° (95% power content, publication)
    • 17 W near-diffraction-limited emission from a single semiconductor light source [publication]
    • reliable output power >120 W (1 ms 200 Hz) from an aperture of 1.2 mm [publication]
    • up to 7 W output power from a 30 µm aperture, with a beam parameter product of < 2 mm mrad [publication]
  • Red spectral range:
    • up to 1 W output power at 635 nm
    • high efficiency of 37 % at 635 nm [publication]
    • 654 nm devices with 2.7 W reliable output (100 µs 35 Hz, publication) 
    • 670 nm devices with 1.2 W reliable cw output power [publication]