Modeling the trapping effects of widely used GaN HEMTs remains a key issue. FBH's approach allows to derive an optimized set of parameters sensitive to trap states, enabling optimum large signal simulation accuracy for standard models.
Research News 2017
Diode laser bars emitting in the 9xx nm range are the preferred light sources for a wide range of industrial and scientific high-power applications. Recent progress at the FBH in epitaxial layer design enables high efficiency in bars with long resonators, as needed for very high power applications.
True vertical inversion type GaN MISFETs have been realized at FBH that demonstrate a promising technological baseline towards larger periphery vertical GaN MISFET devices for power electronics applications.
FBH has developed optimized AlGaN UV photodetectors with high EQE values at very low bias voltages under bottom illumination conditions by combining sufficiently thin absorber layers and geometrically asymmetric electrode schemes.
Gallium oxide is a promising ultra-wide-bandgap semiconductor for future high-voltage power electronics applications due to its outstanding material properties. FBH has now successfully demonstrated transistors revealing the potential of this new material.
FBH is developing compact laser modules with very narrow linewiths suitable for future applications of quantum technologies. Besides advanced DFB laser diodes, passive optical micro components are subject of intense research at FBH.
AlGaN-based UV LEDs are promising devices for a variety of applications such as water purification, gas sensing, and UV curing. FBH investigations open up new possibilities for degradation studies in UV LEDs for subsequent optimization.
Frequencies beyond 300 GHz have been identified as an important frequency range for a variety of applications including future high-speed communications, radar sensors and imaging systems
The rapidly growing field of biomedical imaging depends heavily on the development of ever more specialized and tailored light sources