HiPoSwitch - GaN-based normally-off high power switching transistor for efficient power converters

The EU project HiPoSwitch (2011-2015), which is coordinated by the Ferdinand-Braun-Institut, is focusing on novel gallium nitride-based transistors. They are the key switching devices designed to ensure increased efficiency in future power converter systems and requiring less volume and weight along with enhanced performance. With its superior material properties, gallium nitride (GaN) promises to be a suitable material for power switching. It is the basis for power switches operating at significantly higher frequencies without suffering from major switching losses.

GaN power transistors on wafer
GaN power transistors on wafer

The transistors will be built up on cost-efficient silicon substrates and therefore become extraordinarily attractive from an economic point of view. In the long run, they will combine significantly improved technical properties with comparably low costs. Eight European project partners provide a portfolio of complementary competencies covering the complete value added chain, from research and development (Ferdinand-Braun-Institut, Slovak Academy of Sciences, Vienna University of Technology, University of Padua) to industrial application (Aixtron, Artesyn Austria, EpiGaN, Infineon Austria). After project completion, GaN power transistors on 200 mm silicon substrates will be commercially available and marketed world-wide.

Further information www.hiposwitch.eu