Long-term reliability studies of high-power 808 nm tapered diode lasers with stable beam quality

Published in:
Semicond. Sci. Technol. 22 (2007) 374-379.
© Institute of Physics and IOP Publishing Limited 2007. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Institute of Physics and IOP Publishing Limited.

Abstract:
Long-term ageing tests of 808 nm tapered diode lasers with tensile-strained GaAsP quantum wells embedded in AlGaAs waveguides are presented. The lasers have been aged over 7200 h at an output power of 2 W in continuous-wave operation. The experiments demonstrate a low degradation rate of 1.3 × 10^-5 h^-1 as well as high stability of the beam quality. The high long-term reliability of operation combined with stable beam quality makes these lasers promising for new industrial applications.

Full version in pdf-format.