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Gradual degradation of red-emitting high-power diode laser bars
M. Ziegler, T.Q. Tien, S. Schwirzke-Schaaf, J.W. Tomm
Max-Born-Institut, Max-Born-Str. 2 A, 12489 Berlin, Germany
B. Sumpf, G. Erbert
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
M. Oudart
Alcatel Thales III-V Laboratory, RD128, 91767 Palaiseau Cedex, France
J. Nagle
Thales Research and Technology, RD128, 91767 Palaiseau Cedex, France
Published in:
Appl. Phys. Lett. 90, 171113 (2007).
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Abstract:
The authors analyze early stages of gradual degradation in highly reliable 650 nm emitting
high-power diode laser arrays with continuous wave emission powers of 2.5 W (facet load of
4 mW/µm). In all cases the edges of the metallized emitter stripes are identified as the starting
points of gradual degradation. The magnitude of the observed degradation signatures, however, is
highly correlated with the bar-specific packaging-induced strain at each emitter. We find a
bar-specific effect, namely, the presence of packaging-induced strain, to be the driving force of
gradual degradation. Our findings point to the significance of proper strain management in advanced
device structures.
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