Self-separation of thick two inch GaN layers grown by HVPE on sapphire using epitaxial lateral overgrowth with masks containing tungsten

Published in:
phys. stat. sol. (c) 4, No. 7, 2638-2641 (2007).
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Abstract:
Self-separation of freestanding GaN layers of 50 mm diameter and thicknesses from around 50 µm to several hundred µm has been achieved using lateral overgrowth over silicon nitride masks with a high fraction of tungsten (WSiN). The moment of the separation was found to change with both the area ratio of the mask and the absolute structure size.

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