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Optimization of HVPE growth of freestanding c-plane GaN layers using (100) γ-LiAlO2 substrates
E. Richter, Ch. Hennig, L. Wang, U. Zeimer, M. Weyers, and G. Tränkle
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Published in:
phys. stat. sol. (c) 4, No. 7, 2277-2280 (2007).
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Abstract:
Freestanding c-plane GaN substrates are obtained using (100) γ- LiAlO2 substrates due to spontaneous
separation during post-growth cool down. It is shown that by growth optimization the structural properties
of 200 µm thick freestanding GaN layers can be improved resulting in FWHM values of ω-rocking curves
below 400 arcsec for 002 and 302 reflection and threading-dislocation densities below 109 cm-2.
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