10W reliable operation of 808nm broad-area diode lasers by near-field distribution control in a multistripe contact geometry

K. Paschke, S. Einfeldt, Ch. Fiebig, A. Ginolas, K. Häusler, P. Ressel, B. Sumpf, and G. Erbert

^b Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

Published in:
Proc. SPIE 6456, 64560H (2007).
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Abstract:
High-power diode lasers operating at 808 nm and consisting of a multiple ridge-waveguide structure have been fabricated. Lasers with this structure show a more stable far and near field pattern in comparison to conventional single stripe broad area lasers. A reliable continuous wave operation at room temperature over 8000 h at 8 W and 800 h at 10 W has been achieved with 200 µm stripe width devices.

Keywords:
High-power diode lasers, broad area lasers, multiple stripe lasers, reliability

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