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808 nm tapered diode lasers optimised for high output power and nearly diffraction-limited beam quality in pulse mode operation
O.B. Jensena,
A. Klehrb, F. Dittmarb, B. Sumpfb, G. Erbertb, P.E. Andersena and P.M. Petersena
a Risø National Laboratory, Optics and Plasma Research Department, Frederiksborgvej 399, Dk-4000 Roskilde, Denmark
b Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Published in:
Proc. SPIE 6456, 64560A (2007).
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Abstract:
808 nm tapered lasers have been investigated under current pulsing conditions without thermal load. The pulse length
was 100 ns. The lasers are based on a super-large optical cavity structure with a very small vertical divergence angle of
18° (FWHM). The output power, beam quality and spectral behavior of the lasers were measured. Resonator geometries
with different ridge waveguide lengths and taper angles were used for the optimisation of output power and beam
quality. As a result, 27 W output power has been achieved. Nearly diffraction-limited beam quality up to 9 W has been
obtained with an optimised lateral geometry. At even higher power, spectral broadening and beam quality degradation of
the lasers were observed.
Keywords:
Semiconductor laser, tapered diode laser, pulsed laser, beam quality, high brightness
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