C. Netzel, T. Wernicke, U. Zeimer, F. Brunner, M. Weyers, M. Kneissl
"Near band edge and defect emissions from epitaxial lateral overgrown α-plane GaN with different stripe orientations"
J. Cryst. Growth, vol. 310, no. 1, pp. 8-12 (2008).

M. Rudolph, F. Korndörfer, P. Heymann, and W. Heinrich
"Compact Large-Signal Shot-Noise Model for HBTs"
IEEE Trans. Microwave Theory Tech., vol. 56, no. 1, pp. 7-14 (2008).

B. Brüser, T. Panzner, S. Grigorian, J. Grenzer, M. Zorn, U. Zeimer, and U. Pietsch
"High resolution measurement of the thermal expansion coefficient of semiconductor multilayer lateral nanostructures"
phys. stat. sol. (a), vol. 205, no. 2, pp. 316-320 (2008).

H. Wenzel, F. Bugge, M. Dallmer, F. Dittmar, J. Fricke, K.H. Hasler, and G. Erbert
"Fundamental-Lateral Mode Stabilized High-Power Ridge-Waveguide Lasers With a Low Beam Divergence"
IEEE Photonics Technol. Lett., vol. 20, no. 3, pp. 214-216 (2008).

M. Ziegler, J.W. Tomm, T. Elsaesser, G. Erbert, F. Bugge, W. Nakwaski, and R.P. Sarzala
"Visualization of heat flows in high-power diode lasers by lock-in thermography"
Appl. Phys. Lett., vol. 92, no. 103513 (2008).

P.J. Wellmann, S.A. Sakwe, F. Oehlschläger, V. Hoffmann, U. Zeimer, A. Knauer
"Determination of dislocation density in MOVPE grown GaN layers using KOH defect etching"
J. Cryst. Growth, vol. 310, no. 5, pp. 955-958 (2008).

Ch. Hennig, E. Richter, M. Weyers and G. Tränkle
"Freestanding 2-in GaN layers using lateral overgrowth with HVPE"
J. Cryst. Growth, vol. 310, no. 5, pp. 911-915 (2008).

P. Crump, P. Leisher, T. Matson, V. Anderson, D. Schulte, J. Bell, J. Farmer, M. DeVito, R. Martinsen, Y.K. Kim, K.D. Choquette, G. Erbert, and G. Tränkle
"Control of optical mode distribution through etched microstructures for improved broad area laser performance"
Appl. Phys. Lett., vol. 92, no. 131113 (2008).

A. Klehr, J. Fricke, A. Knauer, G. Erbert, M. Walther, R. Wilk, M. Mikulics, and M. Koch
"High-Power Monolithic Two-Mode DFB Laser Diodes for the Generation of THz Radiation"
IEEE J. Sel. Top. Quantum Electron., vol. 14, no. 2, pp. 289-294 (2008).

C.-S. Friedrich, C. Brenner, S. Hoffmann, A. Schmitz, I. Cámara Mayorga, A. Klehr, G. Erbert, and M.R. Hofmann
"New Two-Color Laser Concepts for THz Generation"
IEEE J. Sel. Top. Quantum Electron., vol. 14, no. 2, pp. 270-276 (2008).

P. Klopp, F. Saas, M. Zorn, M. Weyers, and U. Griebner
"290-fs pulses from a semiconductor disk laser"
Opt. Express, vol. 16, no. 8, pp. 5770-5775 (2008).

F. Brunner, A. Knauer, T. Schenk, M. Weyers, J.-T. Zettler
"Quantitative analysis of in situ wafer bowing measurements for III-nitride growth on sapphire"
J. Cryst. Growth, vol. 310, no. 10, pp. 2432-2438 (2008).

F. Brunner, H. Protzmann, M. Heuken, A. Knauer, M. Weyers, and M. Kneissl
"High-temperature growth of AlN in a production scale 11x2" MOVPE reactor"
phys. stat. sol. (c), vol. 5, no. 6, pp. 1799-1801 (2008).

T. Wernicke, C. Netzel, M. Weyers, and M. Kneissl
"Semipolar GaN grown on m-plane sapphire using MOVPE"
phys. stat. sol. (c), vol. 5, no. 6, pp. 1815-1817 (2008).

A. Knauer, H. Wenzel, T. Kolbe, S. Einfeldt, M. Weyers, M. Kneissl, G. Tränkle
"Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes"
Appl. Phys. Lett., vol. 92, no. 191912 (2008).

A. Pietrzak, P. Crump, R. Staske, H. Wenzel, G. Erbert and G. Tränkle
"Peak power from 60-µm Broad Area Single Emitter Limited to 50-W by Carrier Escape"
Conf. on Lasers and Electro-Optics (CLEO/QELS), San Jose, CA, May 4-9, paper CMN2 (2008).

P. Crump, H. Wenzel, G. Erbert, S. Einfeldt, P. Ressel, M. Zorn, F. Bugge, M. Spreemann, F. Dittmar, R. Staske, and G. Tränkle
"808-nm TM Polarised High Power Broad Area Lasers with 69.5% Power Conversion Efficiency at 71-W"
Conf. on Lasers and Electro-Optics (CLEO/QELS), San Jose, CA, May 4-9, paper CMN3 (2008).

K. Paschke, S. Einfeldt, A. Ginolas, K. Häusler, P. Ressel, B. Sumpf, H. Wenzel, G. Erbert
"15-W reliable operation of 96-µm aperture broad-area diode lasers emitting at 980 nm"
Conf. on Lasers and Electro-Optics (CLEO/QELS), San Jose, CA, May 4-9, paper CMN4 (2008).

P. Kurpas, B. Janke, A. Wentzel, H. Weiss, L. Schmidt, C. Rheinfelder, R. Pazirandeh, A. Maaßdorf, L. Schellhase, W. Heinrich, J. Würfl
"High Yield, Highly Scalable, High Voltage GaInP/GaAs HBT Technology"
Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2008), Chicago, IL, Apr. 14-17, pp. 115-118 (2008).

T. Krämer, C. Meliani, F. Lenk, J. Würfl, G. Tränkle
"Transferred Substrate DHBT of f_t = 410 GHz and f_max = 480 GHz for Traveling Wave Amplifiers"
Int. Conf. on Indium Phosphide and Related Materials (IPRM 2008), Versailles, France, May 25-29, pp. 1-3 (2008).

Z.H. Wu, A.M. Fischer, F.A. Ponce, B. Bastek, J. Christen, T. Wernicke, M. Weyers, and M. Kneissl
"Structural and optical properties of nonpolar GaN thin films"
Appl. Phys. Lett., vol. 92, no. 171904 (2008).

B. Bastek, F. Bertram, J. Christen, T. Wernicke, M. Weyers, and M. Kneissl
"A-plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy"
Appl. Phys. Lett., vol. 92, no. 212111 (2008).

M. Ziegler, V. Talalaev, J.W. Tomm, T. Elsaesser, P. Ressel, B. Sumpf, and G. Erbert
"Surface recombination and facet heating in high-power diode lasers"
Appl. Phys. Lett., vol. 92, no. 203506 (2008).

G. Lucas-Leclin, D. Paboeuf, P. Georges, J. Holm, P. Andersen, B. Sumpf, G. Erbert
"Wavelength stabilization of extended-cavity tapered lasers with volume Bragg gratings"
Appl. Phys. B, vol. 91, no. 3-4, pp. 493-498 (2008).

O. Krüger, T. Wernicke, J. Würfl, R. Hergenröder, G. Tränkle
"Analysis of material modifications caused by nanosecond pulsed UV laser processing of SiC and GaN"
Appl. Phys. A, vol. 93, no. 1, pp. 85-91 (2008).

G. Sonia, E. Richter, F. Brunner, A. Denker, R. Lossy, M. Mai, F. Lenk, J. Bundesmann, G. Pensl, J. Schmidt, U. Zeimer, L. Wang, K. Baskar, M. Weyers, J. Würfl, G. Tränkle
"2 MeV ion irradiation effects on AlGaN/GaN HFET devices"
Solid-State Electron., vol. 52, no. 7, pp. 1011-1017 (2008).

T. Schlauch, M. Li, M.R. Hofmann, A. Klehr, G. Erbert, and G. Tränkle
"High peak power femtosecond pulses from modelocked semiconductor laser in external cavity"
Electron. Lett., vol. 44, no. 11, pp. 678-679 (2008).

M. Rudolph
"Limitations of Current Compact Transit-Time Models for III-V-Based HBT"
IEEE MTT-S Int. Microw. Symp. Dig., Atlanta, GA, Jun. 15-20, pp. 487-490 (2008).

C. Meliani, J. Flucke, A. Wentzel, J. Würfl, W. Heinrich, and G. Tränkle
"Switch-Mode Amplifier ICs with over 90% Efficiency for Class-S PAs using GaAs-HBTs and GaN-HEMTs"
IEEE MTT-S Int. Microw. Symp. Dig., Atlanta, GA, Jun. 15-20, pp. 751-754 (2008).

C. Meliani, M. Rudolph, R. Doerner, W. Heinrich
"Bandwidth Potential of HBT-Based TWAs as a Function of Transistor f_max/f_T Ratio"
IEEE Trans. Microwave Theory Tech., vol. 56, no. 6, pp. 1331-1337 (2008).

P. Leisher, K. Price, S. Bashar, L. Bao, H. Huang, J. Wang, D. Wise, S. Zhang, S. Das, M. DeFranza, A. Hodges, U. Trifan, D. Balsley, W. Dong, M. Grimshaw, M. DeVito, J. Bell, R. Martinsen, J. Farmer, P. Crump, and S. Patterson
"Mode Control for High Performance Laser Diode Sources"
Proc. SPIE, vol. 6952, no. 69520C (2008).

O.V. Smolski, J.K. O’Daniel, E.G. Johnson, P. Leisher, P. Crump
"Master oscillator power amplifier 3D assemblies based on grating coupled laser diodes"
Proc. SPIE, vol. 6909, no. 690919 (2008).

D. Paboeuf, G. Lucas-Leclin, P. Georges, B. Sumpf, G. Erbert, C. Varona, P. Loiseau, G. Aka, B. Ferrand
"Diode pumping of Nd:ASL and its frequency doubling for blue emission around 450 nm"
Proc. SPIE, vol. 6871, no. 68711P (2008).

G. Blume, M. Uebernickel, C. Fiebig, K. Paschke, A. Ginolas, B. Eppich, R. Güther, and G. Erbert
"Rayleigh length dependent SHG conversion at 488nm using a monolithic DBR tapered diode laser"
Proc. SPIE, vol. 6875, no. 68751C (2008).

C. Fiebig, B. Eppich, W. Pittroff, G. Erbert
"Stable and compact mounting scheme for > 1kW QCW diode laser stacks at 940nm"
Proc. SPIE, vol. 6876, no. 68760J (2008).

B. Sumpf, P. Adamiec, M. Zorn, P. Froese, J. Fricke, P. Ressel, H. Wenzel, M. Weyers, G. Erbert, G. Tränkle
"650 nm tapered lasers with 1 W maximum output power and nearly diffraction limited beam quality at 500 mW"
Proc. SPIE, vol. 6876, no. 68760M (2008).

B. Sumpf, M. Zorn, J. Fricke, P. Ressel, H. Wenzel, G. Erbert, M. Weyers, G. Tränkle
"1 W reliable operation of broad area lasers and 8 W reliable operation of 5 mm wide laser bars at 650 nm"
Proc. SPIE, vol. 6876, no. 68760T (2008).

T. Schmitt, A. Able, R. Häring, B. Sumpf, G. Erbert, G. Tränkle, F. Lison, W.G. Kaenders
"cw, 325nm, 100mW semiconductor laser system as potential substitute for HeCd gas lasers"
Proc. SPIE, vol. 6876, no. 687610 (2008).

G. Erbert, F. Bugge, B. Eppich, J. Fricke, K-H. Hasler, K. Paschke, A. Pietrzak, H. Wenzel, and G. Tränkle
"High brightness diode lasers with very narrow vertical divergence"
Proc. SPIE, vol. 6909, no. 69090P (2008).

A. Klehr, H. Wenzel, O. Brox, F. Bugge, G. Erbert, T-P. Nguyen and G. Tränkle
"High power DFB lasers for D1 and D2 caesium absorption spectroscopy and atomic clocks"
Proc. SPIE, vol. 6909, no. 69091E (2008).

O. Brox, J. Wiedmann, F. Scholz, F. Bugge, J. Fricke, A. Klehr, T. Laurent, P. Ressel, H. Wenzel, G. Erbert and G. Tränkle
"Integrated 1060nm MOPA pump source for high-power green light emitters in display technology"
Proc. SPIE, vol. 6909, no. 69091G (2008).

N. Michel, M. Krakowski, I. Hassiaoui, M. Calligaro, M. Lecomte, O. Parillaud, P. Weinmann, C. Zimmermann, W. Kaiser, M. Kamp, A. Forchel, E.-M. Pavelescu, J.-P. Reithmaier, B. Sumpf, G. Erbert, M. Kelemen, R. Ostendorf, J.-M. García-Tijero, H. Odriozola, I. Esquivias
"High-brightness quantum well and quantum dot tapered lasers"
Proc. SPIE, vol. 6909, no. 690918 (2008).

H. König, G. Grönninger, P. Brick, M. Reufer, F. Bugge, G. Erbert, M. Stoiber, J. Biesenbach, D. Lorenzen, P. Hennig, U. Strauß
"Brilliant high power laser bars for industrial applications"
Proc. SPIE, vol. 6876, no. 687616 (2008).

P. Crump, H. Wenzel, G. Erbert, P. Ressel, M. Zorn, F. Bugge, S. Einfeldt, R. Staske, U. Zeimer, A. Pietrzak, G. Tränkle
"Passively Cooled TM Polarized 808-nm Laser Bars With 70% Power Conversion at 80-W and 55-W Peak Power per 100-µm Stripe Width"
IEEE Photonics Technol. Lett., vol. 20, no. 16, pp. 1378-1380, (2008).

M. Ziegler, R. Pomraenke, M. Felger, J.W. Tomm, P. Vasa, C. Lienau, M.B. Sanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge and G. Erbert
"Infrared emission from the substrate of GaAs-based semiconductor lasers"
Appl. Phys. Lett., vol. 93, no. 041101 (2008).

R. Güther
"Descartes ovaloides for negative refractive indices and their aplanatic cases"
Optik - International Journal for Light and Electron Optics" , vol. 15, no. 12, pp. 577-583 (2008).

R. Güther, G. Blume, M. Uebernickel, C. Fiebig, K. Paschke, A. Ginolas, B. Eppich, G. Erbert
"Generation of second harmonic with non-diffraction limited radiation"
Proc. DGaO, P 45 (2008).

M. Maiwald, A. Ginolas, A. Müller, A. Sahm, B. Sumpf, G. Erbert, and G. Tränkle
"Wavelength-Stabilized Compact Diode Laser System on a Microoptical Bench With 1.5-W Optical Output Power at 671 nm"
IEEE Photonics Technol. Lett., vol. 20, no. 19, pp. 1627-1629 (2008).

K.-H. Hasler, B. Sumpf, P. Adamiec, F. Bugge, J. Fricke, P. Ressel, H. Wenzel, G. Erbert, G. Tränkle
"5-W DBR Tapered Lasers Emitting at 1060 nm With a Narrow Spectral Linewidth and a Nearly Diffraction-Limited Beam Quality"
IEEE Photonics Technol. Lett., vol. 20, no. 19, pp. 1648-1650 (2008).

B. Sumpf, M. Zorn, M. Maiwald, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, and G. Tränkle
"5.6-W Broad-Area Lasers With a Vertical Far-Field Angle of 31° Emitting at 670 nm"
IEEE Photonics Technol. Lett., vol. 20, no. 8, pp. 575-577 (2008).

I. Khalil, A. Liero, M. Rudolph, R. Lossy, and W. Heinrich
"GaN HEMT Potential for Low-Noise Highly Linear RF Applications"
IEEE Microwave Wireless Compon. Lett., vol. 18, no. 9, pp. 605-607 (2008).

R. Gesche, S. Kühn and C. Andrei
"Plasma ignition in a quarter-wavelength microwave slot resonator"
J. Phys. D: Appl. Phys., vol. 41, no. 194003 (2008).

H. Wenzel, M. Dallmer, G. Erbert
"Thermal lensing in high-power ridge-waveguide lasers"
Opt. Quantum Electron., vol. 40, no. 5-6, pp. 379-384 (2008).

A. Pietrzak, H. Wenzel, G. Erbert, and G. Tränkle
"High-power laser diodes emitting light above 1100 nm with a small vertical divergence angle of 13°"
Opt. Lett., vol. 33, no. 19, pp. 2188-2190 (2008).

V. Hoffmann, A. Knauer, F. Brunner, C. Netzel, U. Zeimer, S. Einfeldt, M. Weyers, G. Tränkle, J.M. Karaliunas, K. Kazlauskas, S. Jursenas, U. Jahn, J.R. van Look and M. Kneissl
"Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes"
J. Cryst. Growth, vol. 310, no. 21, pp. 4525-4530 (2008).

T. Ulm, H. Fuchs, J.A. L’huillier, A. Klehr, B. Sumpf, E. Gehrig
"Amplification of kW peak power femtosecond pulses in single quantum well InGaAs tapered amplifiers"
Opt. Commun., vol. 281, no. 8, pp. 2160-2166 (2008).

M. Uebernickel, C. Fiebig, G. Blume, K. Paschke, B. Eppich, R. Güther, G. Erbert
"400 mW and 16.5% wavelength conversion efficiency at 488 nm using a diode laser and a PPLN crystal in single pass configuration"
Appl. Phys. B, vol. 93, no. 4, pp. 823-827 (2008).

C. Fiebig, G. Blume, C. Kaspari, D. Feise, J. Fricke, M. Matalla, W. John, H. Wenzel, K. Paschke and G. Erbert
"12W high-brightness single-frequency DBR tapered diode laser"
Electron. Lett ., vol. 44, no. 21, pp. 1253-1255 (2008).

C. Kaspari, B. Sumpf, M. Zorn, J. Fricke, P. Ressel, K. Paschke, M. Weyers, and G. Erbert
"Conductively Cooled 637-nm InGaP Broad-Area Lasers and Laser Bars With Conversion Efficiencies Up to 37% and a Small Vertical Far Field of 30°"
IEEE Photonics Technol. Lett., vol. 20, no. 22, pp. 1824-1826 (2008).

T.Q. Tran, M. Maiwald, B. Sumpf, G. Erbert, and G. Tränkle
"Microexternal cavity tapered lasers at 670 nm with 5 W peak power and nearly diffraction-limited beam quality"
Opt. Lett., vol. 33, no. 22, pp. 2692-2694 (2008).

C. Brenner, S. Hoffmann, C.-S. Friedrich, T. Schlauch, A. Klehr, G. Erbert, G. Tränkle, C. Jördens, M. Salhi, M. Koch, and M.R. Hofmann
"Semiconductor laser based THz generation and detection"
phys. stat. sol. (c), vol. 6, no. 2, pp. 564-567 (2008).

H. Wenzel, A. Knauer, T. Kolbe and M. Kneissl
"Interplay of screening and band gap renormalization effects in near UV InGaN light emitting diodes"
Int. Conf. on Numerical Simulation of Optoelectronic Devices (NUSOD '08), Nottingham, UK, Sep. 1-4, pp. 5-6 (2008).

T. Tekin, H. Schröder, B. Wunderle, G. Erbert, A. Klehr, O. Brox, J. Wiedmann, F. Scholz
"A compact integrated green-light source by second harmonic generation of a GaAs distributed feedback laser diode"
Proc. SPIE, vol. 6992, no. 69920O (2008).

P. Leisher, K. Price, K. Kennedy, W. Dong, M. Grimshaw, S. Zhang, S. Elim, J. Patterson, M. Bougher, S. Das, U. Trifan, D. Dawson, D. McCal, A. Hodges, S. Karlsen, R. Martinsen, J. Bell, P. Crump, and S. Patterson
"Progress in Long-Wavelength High-Power Diode Laser Pump Sources"
Solid State and Diode Laser Technology Review (SSDLTR 2008), Albuquerque, NM, Jun. 2-5 (2008).

A. Maaßdorf, M. Weyers
"In-situ etching of GaAs/Al_xGa_1-xAs by CBr₄"
J. Cryst. Growth, vol. 310, no. 23, pp. 4754-4756 (2008).

C. Kaspari, M. Zorn, M. Weyers, G. Erbert
"Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes"
J. Cryst. Growth, vol. 310, no. 23, pp. 5175-5177 (2008) .

M. Zorn, P. Klopp, F. Saas, A. Ginolas, O. Krüger, U. Griebner, M. Weyers
"Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE"
J. Cryst. Growth, vol. 310, no. 23, pp. 5187-5190 (2008).

O. Reentilä, F. Brunner, A. Knauer, A. Mogilatenko, W. Neumann, H. Protzmann, M. Heuken, M. Kneissl, M. Weyers, G. Tränkle
"Effect of the AIN nucleation layer growth on AlN material quality"
J. Cryst. Growth, vol. 310, no. 23, pp. 4932-4934 (2008).

M. Rudolph
"Current Trends and Challenges in III-V HBT Compact Modeling"
European Microwave Integrated Circuit Conf. (EuMIC 2008), Amsterdam, Netherlands, Oct. 27-28, pp. 278-281 (2008).

K. Paschke, C. Fiebig, D. Feise, J. Fricke, C. Kaspari, G. Blume, H. Wenzel, and G. Erbert
"High-power single-frequency operation of a DBR tapered laser"
IEEE Int. Semiconductor Laser Conf. (ISLC 2008), Sorrento, Italy, Sep. 14-18, pp. 131-132 (2008).

T. Kettler, K. Posilovic, J. Fricke, P. Ressel, A. Ginolas, U.W. Pohl, V.A. Shchukin, N.N. Ledentsov, D. Bimberg, J. Jönsson, M. Weyers, G. Erbert, and G. Tränkle
"High brightness and ultra-narrow beam 850 nm GaAs/AlGaAs photonic band crystal lasers and first uncoupled PBC single-mode arrays"
IEEE Int. Semiconductor Laser Conf. (ISLC 2008), Sorrento, Italy, Sep. 14-18, pp. 194-195 (2008).

K. Posilovic, T. Kettler, V.A. Shchukin, N.N. Ledentsov, U.W. Pohl, D. Bimberg, J. Fricke, A. Ginolas, G. Erbert, G. Tränkle, J. Jönsson, M. Weyers
"Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes"
Appl. Phys. Lett., vol. 93, no. 221102 (2008).

J. Wiedmann, O. Brox, T. Tekin, F. Scholz, T. Büttner, S. Marx, G. Lang, H. Schröder, A. Klehr, G. Erbert
"Compact green laser source using butt-coupling between multi-section DFB-laser and SHG waveguide crystal"
Electron. Lett., vol. 44, no. 25, pp. 1463-1464 (2008).

M. Lichtner, M. Radziunas, U. Bandelow, M. Spreemann, and H. Wenzel
"Dynamic simulation of high brightness semiconductor lasers"
Int. Conf. on Numerical Simulation of Optoelectronic Devices (NUSOD '08), Nottingham, UK, Sep. 1-4, pp. 65-66 (2008).

J.H. Lundeman, O.B. Jensen, P.E. Andersen, S. Andersson-Engels, B. Sumpf, G. Erbert, and P.M. Petersen
"High power 404 nm source based on second harmonic generation in PPKTP of a tapered external feedback diode laser"
Opt. Express, vol. 16, no. 4, pp. 2486-2493 (2008).

F. Dybala, A. Bercha, B. Piechal, W. Trzeciakowski, R. Bohdan, M. Mrozowicz, A. Klehr, P. Ressel, H. Wenzel, B. Sumpf and G. Erbert
"Pressure and temperature tuning of an external cavity InGaAsP laser diode"
Semicond. Sci. Technol., vol. 23, no. 125012 (2008).

T. Wernicke, U. Zeimer, M. Herms, M. Weyers, M. Kneissl, G. Irmer
"Microstructure of a-plane (2110) GaN ELOG stripe patterns with different in-plane orientation"
J. Mater. Sci. - Mater. Electron., vol. 19, no. 1, pp. 46-50 (2008).

G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers
"Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering"
J. Mater. Sci. - Mater. Electron., vol. 19, no. 1, pp. 51-57 (2008).

S. Gnanapragasam, E. Richter, F. Brunner, A. Denker, R. Lossy, M. Mai, F. Lenk, J. Opitz-Coutureau, G. Pensl, J. Schmidt, U. Zeimer, L. Wang, B. Krishnan, M. Weyers, J. Würfl and G. Tränkle
"Irradiation effects on AlGaN HFET devices and GaN layers"
J. Mater. Sci. - Mater. Electron., vol. 19, no. 1, pp. 64-67 (2008).

M. Herms, U. Zeimer, G. Sonia, F. Brunner, E. Richter, M. Weyers, G. Tränkle, T. Behm, G. Irmer, G. Pensl, A. Denker, J. Opitz-Coutureau
"Study of in-depth strain variation in ion-irradiated GaN"
J. Mater. Sci. - Mater. Electron., vol. 19, no. 1, pp. 68-72 (2008).

K. Häusler, U. Zeimer, B. Sumpf, G. Erbert, G. Tränkle
"Degradation model analysis of laser diodes"
J. Mater. Sci. - Mater. Electron., vol. 19, no. 1, pp. 160-164 (2008).

A. Rumiantsev, R. Doerner
"Verification of Wafer-level Calibration Accuracy at High Temperatures"
IEEE MTT-S Int. Microw. Symp. Dig., Atlanta, GA, Jun. 15-20, pp. 103-106 (2008).

E. Bahat-Treidel, O. Hilt, F. Brunner, J. Würfl, and G. Tränkle
"Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement"
IEEE Trans. Electron Devices, vol. 55, no. 12, pp. 3354-3359 (2008).

A. Wentzel, C. Meliani, J. Flucke and W. Heinrich
"High-frequency time-domain measurement techniques for switch-mode amplifiers"
German Microwave Conf. (GeMIC 2008), Hamburg-Harburg, Germany, Mar. 10-12, pp. 18-23 (2008).