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High resolution measurement of the thermal expansion coefficient of semiconductor multilayer lateral nanostructures
B. Brüser1, T. Panzner1, S. Grigorian1, J. Grenzer2, M. Zorn3, U. Zeimer3, and U. Pietsch1
1 Festkörperphysik, Universität Siegen, Walter-Flex-Str. 3, 57068 Siegen, Germany
2 Forschungszentrum Rossendorf e.V., P.O. Box 510119, 013414 Dresden, Germany
3 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Published in:
phys. stat. sol. (a), vol. 205, no. 2, pp. 316-320 (2008).
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Abstract:
We measured the thermal expansion coefficient (TEC) of
a vertically stacked multi-quantum-well (MQW) structure
buried under a thick GaAs top layer before and after lateral
patterning of the GaAs top layer. After patterning the TEC of
the whole MQW structure differs from that of the planar
structure by about 20%. Based on calculations in terms of
methods of finite elements the effect is explained by the influence
of the strain field originating from the bottom edges
of the etched nanostructure. Due to the long range nature of
this strain field the strain release within the individual quantum
wells changes as a function from the distance from the
valley.
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