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High-temperature growth of AlN in a production scale 11x2" MOVPE reactor
F. Brunner1, H. Protzmann2, M. Heuken2, A. Knauer1, M. Weyers1, and M. Kneissl1
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany
Published in:
phys. stat. sol. (c), vol. 5, no. 6, pp. 1799-1801 (2008).
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Abstract:
We report on the growth of high quality AlN films on sapphire
by MOVPE in an AIX2400G3-HT planetary reactor.
Specific reactor hardware modifications were conducted to
facilitate growth temperatures of up to 1600 &grd;C and to obtain
reduced parasitic gas phase reactions. Growth was optimized
regarding growth rate and surface morphology as well as optical
and structural properties of the AlN layers on sapphire.
With increasing growth temperature we observe a transition
from an AlN surface with a high density of large pits to a
smooth pit-free morphology. The improvement in material
quality with growth temperature is confirmed by X-ray diffraction,
AFM, SIMS and Raman measurements. The impact
of residual or intentionally introduced Ga during growth on
AlN material properties is discussed.
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