808-nm TM Polarised High Power Broad Area Lasers with 69.5% Power Conversion Efficiency at 71-W

P. Crump, H. Wenzel, G. Erbert, S. Einfeldt, P. Ressel, M. Zorn, F. Bugge, M. Spreemann, F. Dittmar, R. Staske, and G. Tränkle

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Published in:
Conf. Dig. CLEO/QELS 2008, Paper CMN3 (2008).
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Abstract:
We report TM polarized 808-nm Lasers bars with 69.5% efficiency at 15&grd;C. Performance is limited by the low-strained InGaAsP quantum well, which has high threshold, low slope and high sensitivity to packaging induced stress.

OCIS Codes:
(140.5960) Semiconductor lasers; (140.2010) Diode Laser Arrays; (250.5590) Quantum-well, -wire and -dot devices