Transferred Substrate DHBT of f_t = 410 GHz and f_max = 480 GHz for Traveling Wave Amplifiers

Published in:
Conference Digest IPRM08 (2008).
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Abstract:
We report a MMIC process in transferred substrate technology. The transistors of 0.8 × 5 µm² emitter size feature f_t = 410 GHz and f_max = 480 GHz at BV_ceo = 5.5 V. Traveling wave amplifiers of 12 dB broadband gain up to f_c = 70 GHz were realized.

Keywords:
InP heterojunction bipolar transistor, transferred substrate, wafer bonding, millimeter-wave, distributed amplifier

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