5.6-W Broad-Area Lasers With a Vertical Far-Field Angle of 31° Emitting at 670 nm

B. Sumpf, M. Zorn, M. Maiwald, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, and G. Tränkle

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Published in:
IEEE Photonics Technol. Lett., vol. 20, no. 8, pp. 575-577 (2008).
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Abstract:
Highly efficient 670-nm high-power broad-area laser diodes with a single InGaP quantum-well embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers are presented. The developed vertical layer structure leads to a vertical far-field angle of 31°. At 15 °C, 100-µm-wide broad-area lasers reach an output power of 5.6 W limited by thermal rollover. The conversion efficiency was 41% at 1.5 W. A 7600-h reliable operation at 1.5 W and a mean time to failure of about 37550 h will be reported.

Index Terms:
Continuous-wave lasers, laser reliability, red lasers, semiconductor lasers.

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