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Interplay of screening and band gap renormalization effects in near UV InGaN light emitting diodes
H. Wenzel1, A. Knauer1, T. Kolbe2 and M. Kneissl1,2
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Technische Universität Berlin, Institute of Solid State Physics, Hardenbergstr. 36, 10623 Berlin, Germany
Published in:
Proc. 8th International Conference on Numerical Simulation of Optoelectronic Devices, IEEE (2008).
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Abstract:
The impact of the barrier composition on the shift
of the luminescence peak wavelength of ultraviolet (UV) emitting
InGaN quantum wells was investigated theoretically. Depending
on the strain and the aluminum and indium mole fractions in
the barriers, a blue, a red or almost no shift was obtained with
increasing carrier density which can be attributed to different
degrees of compensation of the screening of the internal electric
field by band gap renormalization. The electroluminescence of
fabricated light-emiting diodes exhibited the predicted behaviour
in dependence on the injection current.
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