Twin-Contact 645-nm Tapered Laser With 500-mW Output Power

P. Adamiec, B. Sumpf, D. Feise, K.-H. Hasler, P. Ressel, H. Wenzel, M. Zorn, M. Weyers, G. Erbert, and G. Tränkle

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany

Published in:
IEEE Photonics Technol. Lett., vol. 21, no. 4, pp. 236-238 (2009).
© Copyright 2009 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Abstract:
High brightness tapered lasers emitting around 650 nm were developed. We realized 2-mm-long devices with 750-µm straight section, 1250-µm tapered section, and 4° taper angle. The input currents into both sections were independently controlled. The laser reached 500-mW output power in continuous- wave operation in a nearly diffraction-limited beam quality. A modulation efficiency of 7.5 W/A was achieved.

Index Terms:
High-brightness lasers, optical beams, semiconductor lasers, laser display applications.

Full version in pdf-format.