High-Brightness Quantum Well Tapered Lasers

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Fricke, H. Wenzel, M. Zorn, G. Erbert, and G. Tränkle

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

Published in:
IEEE J. Sel. Top. Quantum Electron., vol. 15, no. 3, pp. 1009-1020 (2009).
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Abstract:
High-power quantum well lasers with high brightness in the spectral range between 650 nm and 1080 nm will be presented. Improved layer structures with a narrow vertical far-field divergence down to angles of 15° (full-width at half-maximum) were developed. For these layer structures, optimized tapered lasers were processed to achieve laterally a nearly diffractionlimited beam quality with beam propagation factors smaller than 2. Depending on the emission wavelength, the tapered devices reach an output power up to 12 W and a brightness of 1 GW·cm^-2·sr^-1 .

Index Terms:
Lasers, semiconductor lasers.

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