 |
Mode-locked InGaAs-AlGaAs disk laser generating sub-200-fs pulses, pulse picking and amplification by a tapered diode amplifier
P. Klopp1, U. Griebner1, M. Zorn2, A. Klehr2, A. Liero2, M. Weyers2, and G. Erbert2
1 Max Born Institute, Max-Born-Str. 2a, 12489 Berlin, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
Published in:
Opt. Express, vol. 17, no. 13, pp. 10820-10834 (2009).
© 2009 Optical Society of America. Personal use of this material is permitted. However, permission to reprint/republish this material for
advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists,
or to reuse any copyrighted component of this work in other works must be obtained from the Optical Society of America.
Abstract:
Almost chirp-free pulses with a duration of 190 fs were achieved
from a mode-locked semiconductor disk laser (SDL) emitting at ≈1045 nm.
Pulse shaping was different from the soliton-like mode-locking process
known from lasers using dielectric gain media; passive amplitude
modulation provided by a fast saturable absorber was essential. The
spectrum of the absorber had to be matched to the gain spectrum within a
few nm. A tapered diode amplifier was demonstrated to be a device for both
picking and amplifying SDL pulses. The pulse repetition rate of the SDL
output was reduced from 3 GHz to 47 MHz.
OCIS codes:
(140.3480) Lasers, diode-pumped; (140.4050) Mode-locked lasers; (140.5960)
Semiconductor lasers; (140.7260) Vertical cavity surface emitting lasers.
Full version in pdf-format.
|
|
