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Advances in spatial and spectral brightness in 800-1100 nm GaAs-based high power broad area lasers
P. Crump, H. Wenzel, G. Erbert, and G. Tränkle
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
Published in:
Proc. SPIE, vol. 7483, no. 74830B (2009).
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Abstract:
High power broad area diode lasers generate the optical energy in all high performance, high power laser
systems, either directly or as pump sources for fiber or solid state lasers. Advances in the spectral and
spatial brightness of these diode lasers are essential for further increases in system performance. Recent
development work at the Ferdinand-Braun- Institut fr Hchstfrequenztechnik has lead to significant
improvements in diode laser performance. Our ongoing broad area laser research programs, for example, seek
to increase the peak reliable output power (in CW, QCW and short pulse regimes), minimize the vertical and
lateral far field emission angles, narrow the spectral line width of the emission and increase the power
conversion efficiency. Wavelengths between 800 nm and 1100 nm were investigated, with development work
focused on specific applications. We present a summary of this research and discuss how performance can be
further improved.
Keywords:
broad area lasers, diode lasers, pump lasers, high optical power, high brightness, DFB-laser, reliability
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