2010

J. Raß, T. Wernicke, W.G. Scheibenzuber, U.T. Schwarz, J. Kupec, B. Witzigmann, P. Vogt, S. Einfeldt, M. Weyers, and M. Kneissl
"Polarization of eigenmodes in laser diode waveguides on semipolar and nonpolar GaN"
phys. stat. sol. (RRL), vol. 4, no. 1, pp. 1-3 (2010).


S. Kühn, N. Bibinov, R. Gesche and P. Awakowicz
"Non-thermal atmospheric pressure HF plasma source: generation of nitric oxide and ozone for bio-medical applications"
Plasma Sources Sci. Technol., vol. 19, no. 015013 (2010).


V.Z. Tronciu, M. Lichtner, M. Radziunas, U. Bandelow, H. Wenzel
"Improving the stability of distributed-feedback tapered master-oscillator power-amplifiers"
Opt. Quant. Electron., vol. 41, no. 7, pp. 531-537 (2010).


D. Skoczowsky, A. Jechow, R. Menzel, K. Paschke, and G. Erbert
"Efficient second-harmonic generation using a semiconductor tapered amplifier in a coupled ring-resonator geometry"
Opt. Lett., vol. 35, no. 2, pp. 232-234 (2010).


S. Riecke, S. Schwertfeger, K. Lauritsen, K. Paschke, R. Erdmann, G. Tränkle
"23 W peak power picosecond pulses from a single-stage all-semiconductor master oscillator power amplifier"
Appl. Phys. B, vol. 98, no. 2-3, pp. 295-299 (2010).


K. Paschke, S. Spießberger, C. Kaspari, D. Feise, C. Fiebig, G. Blume, H. Wenzel, A. Wicht, and G. Erbert
"High-power distributed Bragg reflector ridge-waveguide diode laser with very small spectral linewidth"
Opt. Lett., vol. 35, no. 3, pp. 402-404 (2010).


C. Netzel, V. Hoffmann, T. Wernicke, A. Knauer, M. Weyers, M. Kneissl, and N. Szabo
"Temperature and excitation power dependent photoluminescence intensity of GaInN quantum wells with varying charge carrier wave function overlap"
J. Appl. Phys., vol. 107, no. 033510 (2010).


A. Schmidt, V. Petrov, U. Griebner, R. Peters, K. Petermann, G. Huber, C. Fiebig, K. Paschke, and G. Erbert
"Diode-pumped mode-locked Yb:LuScO3 single crystal laser with 74 fs pulse duration"
Opt. Lett., vol. 35, no. 4, pp. 511-513 (2010).


E. Richter, U. Zeimer, F. Brunner, S. Hagedorn, M. Weyers, and G. Tränkle
"Boule-like growth of GaN by HVPE"
phys. stat. sol. (c), vol. 7, no. 1, pp. 28-31 (2010).


J. Fricke, F. Bugge, A. Ginolas, W. John, A. Klehr, M. Matalla, P. Ressel, H. Wenzel, and G. Erbert
"High-Power 980-nm Broad-Area Lasers Spectrally Stabilized by Surface Bragg Gratings"
IEEE Photonics Technol. Lett., vol. 22, no. 5, pp. 284-286 (2010).


P. Crump, C.M. Schultz, A. Pietrzak, S. Knigge, O. Brox, A. Maaßdorf, F. Bugge, H. Wenzel and G. Erbert
"975-nm high-power broad area diode lasers optimized for narrow spectral linewidth applications"
Proc. SPIE, vol. 7583, no. 75830N (2010).


D. Feise, G. Blume, H. Dittrich, C. Kaspari, K. Paschke, and G. Erbert
"High-brightness 635 nm tapered diode lasers with optimized index guiding"
Proc. SPIE, vol. 7583, no. 75830V (2010).


D. Jedrzejczyk, O. Brox, F. Bugge, J. Fricke, A. Ginolas, K. Paschke, H. Wenzel and G. Erbert
"High-power distributed-feedback tapered master-oscillator power amplifiers emitting at 1064 nm"
Proc. SPIE, vol. 7583, no. 758317 (2010).


H. Wenzel, P. Crump, A. Pietrzak, C. Roder, X. Wang, G. Erbert
"The analysis of factors limiting the maximum output power of broad-area laser diodes"
Opt. Quant. Electron., vol. 41, no. 9, pp. 645-652 (2010).


C. Fiebig, V.Z. Tronciu, M. Lichtner, K. Paschke, H. Wenzel
"Experimental and numerical study of Distributed-Bragg-Reflector tapered lasers"
Appl. Phys. B, vol. 99, no. 1-2, pp. 209-214 (2010).


P. Crump, A. Pietrzak, F. Bugge, H. Wenzel, G. Erbert, and G. Tränkle
"975 nm high power diode lasers with high efficiency and narrow vertical far field enabled by low index quantum barriers"
Appl. Phys. Lett., vol. 96, no. 131110 (2010).


A. Liero, M. Dewitz, S. Kühn, N. Chaturvedi, J. Xu, and M. Rudolph
"On the Recovery Time of Highly Robust Low-Noise Amplifiers"
IEEE Trans. Microwave Theory Tech., vol. 58, no. 4, pp. 781-787 (2010).


W. Pittroff, G. Erbert, B. Eppich, C. Fiebig, K. Vogel, and G. Tränkle
"Conductively Cooled 1 kW-QCW Diode Laser Stacks Enabling Simple Fiber Coupling"
IEEE Trans. Compon. Packag. Technol., vol. 33, no. 1, pp. 206-214 (2010).


J. Pomplun, S. Burger, F. Schmidt, A. Schliwa, D. Bimberg, A. Pietrzak, H. Wenzel, and G. Erbert
"Finite element simulation of the optical modes of semiconductor lasers"
phys. stat. sol. (b), vol. 247, no. 4, 846-853 (2010).


C. Fiebig, B. Eppich, K. Paschke, G. Erbert
"High-Brightness 980-nm Tapered Laser - Optimization of the Laser Rear Facet"
IEEE Photonics Technol. Lett., vol. 22, no. 5, pp. 341-343 (2010).


T. Kolbe, T. Sembdner, A. Knauer, V. Kueller, H. Rodriguez, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl
"Carrier injection in InAlGaN single and multi-quantum-well ultraviolet light emitting diodes"
phys. stat. sol. (c), vol. 7, no. 7-8, pp. 2196-2198 (2010).


C.M. Schultz, P. Crump, H. Wenzel, O. Brox, A. Maaßdorf, G. Erbert, G. Tränkle
"11W broad area 976 nm DFB lasers with 58% power conversion efficiency"
Electron. Lett., vol. 46, no. 8, pp. 580-581 (2010).


S.M. Riecke, K. Lauritsen, R. Erdmann, M. Uebernickel, K. Paschke, G. Erbert
"Pulse-shape improvement during amplification and second-harmonic generation of picosecond pulses at 531 nm"
Opt. Lett., vol. 35, no. 10, pp. 1500-1502 (2010).


T. Kolbe, T. Sembdner, A. Knauer, V. Kueller, H. Rodriguez, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl
"(In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width"
phys. stat. sol. (a), vol. 207, no. 9, pp. 2198-2200 (2010).


K. Sowoidnich, H. Schmidt, M. Maiwald, B. Sumpf, H.-D. Kronfeldt
"Application of Diode-Laser Raman Spectroscopy for In situ Investigation of Meat Spoilage"
Food Bioprocess Technol., vol. 3, no. 6, pp. 878-882 (2010).


M. Chi, G. Erbert, B. Sumpf, and P.M. Petersen
"Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm"
Opt. Lett., vol. 35, no. 10, pp. 1545-1547 (2010).


J.-R. van Look, S. Einfeldt, O. Krüger, V. Hoffmann, A. Knauer, M. Weyers, P. Vogt, and M. Kneissl
"Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates"
IEEE Photonics Technol. Lett., vol. 22, no. 6, pp. 416-418 (2010).


R. Debusmann, N. Dhidah, V. Hoffmann, L. Weixelbaum, U. Brauch, T. Graf, M. Weyers, and M. Kneissl
"InGaN-GaN Disk Laser for Blue-Violet Emission Wavelengths"
IEEE Photonics Technol. Lett., vol. 22, no. 9, pp. 652-654 (2010).


R. Pazirandeh, J. Würfl, G. Tränkle
"Determination of GaN HEMT reliability by monitoring IDSS"
Microelectron. Reliab., vol. 50, no. 6, pp. 763-766 (2010).


U. Zeimer, U. Jahn, V. Hoffmann, M. Weyers, and M. Kneissl
"Optical and Structural Properties of In0.08GaN/In0.02GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies"
J. Electron. Mater., vol. 39, no. 6, pp. 677-683 (2010).


A.F. Nieuwenhuis, C.J. Lee, B. Sumpf, P.J.M. van der Slot, G. Erbert, and Klaus-J. Boller
"One-Watt level mid-IR output, singly resonant, continuous-wave optical parametric oscillator pumped by a monolithic diode laser"
Opt. Express, vol. 18, no. 11, pp. 11123-11131 (2010).


J. Rass, T. Wernicke, R. Kremzow, W. John, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl
"Facet formation for laser diodes on nonpolar and semipolar GaN"
phys. stat. sol. (a), vol. 207, no. 6, pp. 1361-1364 (2010).


E. Bahat-Treidel, O. Hilt, F. Brunner, V. Sidorov, J. Würfl, and G. Tränkle
"AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)"
IEEE Trans. Electron Devices, vol. 57, no. 6, pp. 1208-1216 (2010).


A. Wentzel, C. Meliani, W. Heinrich
"RF Class-S Power Amplifiers: State-of-the-Art Results and Potential"
IEEE MTT-S Int. Microw. Symp. Dig., Anaheim, CA, May 25-27, pp. 812-815 (2010).


A. Liero, A. Klehr, S. Schwertfeger, T. Hoffmann, W. Heinrich
"Laser Driver Switching 20 A with 2 ns Pulse Width Using GaN"
IEEE MTT-S Int. Microw. Symp. Dig., Anaheim, CA, May 25-27, pp. 1110-1113 (2010).


S.A. Chevtchenko, F. Brunner, J. Würfl, and G. Tränkle
"Effect of buffer thickness on DC and microwave performance of AlGaN/GaN heterojunction field-effect transistors"
phys. stat. sol. (a), vol. 207, no. 6, pp. 1505-1508 (2010).


C.Y. Lu, E. Bahat-Treidel, O. Hilt, R. Lossy, N. Chaturvedi, E.Y. Chang, J. Würfl and G. Tränkle
"Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs"
Semicond. Sci. Technol., vol. 25, no. 075005 (2010).


D. Gruner, R. Sorge, O. Bengtsson, A.Z. Markos, and G. Boeck
"A 1 W Si-LDMOS Power Amplifier with 40% Drain Efficiency for 6 GHz WLAN Applications"
IEEE MTT-S Int. Microw. Symp. Dig., Anaheim, CA, May 25-27, pp. 517-520 (2010).


D. Bimberg, K. Posilovic, V. Kalosha, T. Kettler, D. Seidlitz, V.A. Shchukin, N.N. Ledentsov, N.Y. Gordeev, L.Y. Karachinsky, I.I. Novikov, M.V. Maximov, Y.M. Shernyakov, A.V. Chunareva, F. Bugge, M. Weyers
"High-power high-brightness semiconductor lasers based on novel waveguide concepts"
Proc. SPIE, vol. 7616, no. 7616I (2010).


O. Brox, F. Bugge, A. Ginolas, A. Klehr, P. Ressel, H. Wenzel, G. Erbert and G. Tränkle
"High-power ridge waveguide DFB and DFB-MOPA lasers at 1064 nm with a vertical farfield angle of 15°"
Proc. SPIE, vol. 7616, no. 7616O (2010).


A. Klehr, B. Sumpf, K.H. Hasler, J. Fricke, A. Liero, Th. Hoffmann, G. Erbert and G. Tränkle
"High peak power pulse generation with GHz repetition rate using a Q-switched 1060nm DBR tapered laser"
Proc. SPIE, vol. 7616, no. 7616J (2010).


B. Sumpf, H. Wenzel, G. Erbert
"High-power, high-brightness semiconductor tapered diode lasers for the red and near infrared spectral range"
Proc. SPIE, vol. 7616, no. 7616L (2010).


B. Sumpf, P. Adamiec, J. Fricke, P. Ressel, H. Wenzel, G. Erbert, G. Tränkle
"Comparison of 650 nm tapered lasers with different lateral geometries at output powers up to 1 W"
Proc. SPIE, vol. 7616, no. 7616H (2010).


J.W. Tomm, M. Ziegler, T. Elsaesser, H.E. Larsen, P.M. Petersen, P.E. Andersen, S. Clausen, U. Zeimer, D. Fendler
"Catastrophic optical mirror damage in diode lasers monitored during single pulse operation"
Proc. SPIE, vol. 7616, no. 7616G (2010).


M. Ziegler, J.W. Tomm, U. Zeimer, and T. Elsaesser
"Imaging Catastrophic Optical Mirror Damage in High-Power Diode Lasers"
J. Electron. Mater., vol. 39, no. 6, pp. 709-714 (2010).


X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C.M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Tränkle
"Root-Cause Analysis of Peak Power Saturation in Pulse-Pumped 1100 nm Broad Area Single Emitter Diode Lasers"
IEEE J. Quantum Electron., vol. 46, no. 5, pp. 658-665 (2010).


M. Uebernickel, R. Güther, G. Blume, C. Fiebig, K. Paschke, G. Erbert
"Study of the properties of the SHG with diode lasers"
Appl. Phys. B, vol. 99, no. 3, pp. 457-464 (2010).


H.E. Porteanu, S. Kühn, and R. Gesche
"Electric probe investigations of microwave generated, atmospheric pressure, plasma jets"
J. Appl. Phys., vol. 108, no. 013301 (2010).


C. Netzel, V. Hoffmann, T. Wernicke, A. Knauer, M. Weyers, and M. Kneissl
"Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells"
phys. stat. sol. (c), vol. 7, no. 7-8, pp. 1872-1874 (2010).


S.N. Elliott, P.M. Smowton, M. Ziegler, J.W. Tomm, and U. Zeimer
"Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes"
J. Appl. Phys., vol. 107, no. 123116 (2010).


M. Maiwald, K. Sowoidnich, H. Schmidt, B. Sumpf, G. Erbert, H.-D. Kronfeldt
"Shifted Excitation Resonance Raman Difference Spectroscopy using a Microsystem Light Source at 488 nm"
Proc. SPIE, vol. 7673, no. 76730N (2010).


H.-D. Kronfeldt, M. Maiwald, H. Ahmad, H. Schmidt, K. Wohlfahrt, B. Sumpf, A. Klehr, G. Erbert
"Investigations for real-time Raman measurements in the deep-ocean by applying a 1.5 W BA DFB diode laser and long optical fibers"
Proc. SPIE, vol. 7673, no. 76730B (2010).


A. Klehr, B. Sumpf, K.-H. Hasler, J. Fricke, A. Liero, G. Erbert
"High-Power Pulse Generation in GHz Range With 1064-nm DBR Tapered Laser"
IEEE Photonics Technol. Lett., vol. 22, no. 11, pp. 832-834 (2010).


D. Jedrzejczyk, R. Güther, K. Paschke, B. Eppich, and G. Erbert
"200 mW at 488 nm From a ppMgO:LN Ridge Waveguide by Frequency Doubling of a Laser Diode Module"
IEEE Photonics Technol. Lett., vol. 22, no. 17, pp. 1282-1284 (2010).


A. Pietrzak, P. Crump, H. Wenzel, F. Bugge, G. Erbert, and G. Tränkle
"High Power 1060 nm Ridge Waveguide Lasers with Low-Index Quantum Barriers for Narrow Divergence Angle"
Conf. on Lasers and Electro-Optics (CLEO/QELS), San Jose, CA, May 16-21, paper CWE2 (2010).


M. Chi, G. Erbert, B. Sumpf, and P.M. Petersen
"1.38 W Tunable High-Power Narrow-Linewidth External-Cavity Tapered Amplifier at 670 nm"
Conf. on Lasers and Electro-Optics (CLEO/QELS), San Jose, CA, May 16-21, paper JTuD99 (2010).


S. Pekarek, C. Fiebig, M.C. Stumpf, A.E.H. Oehler, K. Paschke, G. Erbert, T. Südmeyer, and U. Keller
"First SESAM-modelocked Yb:KGW femtosecond oscillator operating at 1 GHz repetition rate"
Conf. on Lasers and Electro-Optics (CLEO/QELS), San Jose, CA, May 16-21, paper CThI1 (2010).


S. Riecke, K. Lauritsen, R. Erdmann, M. Uebernickel, K. Paschke, G. Erbert
"Second Harmonic Generation of Picosecond Pulses at 530 nm in Bulk PPLN at Variable Repetition Rates"
Conf. on Lasers and Electro-Optics (CLEO/QELS), San Jose, CA, May 16-21, paper CWE7 (2010).


S. Spießberger, M. Schiemangk, A. Wicht and G. Erbert
"Narrow Linewidth DBR-RWLasers emitting near 1064 nm"
Conf. on Lasers and Electro-Optics (CLEO/QELS), San Jose, CA, May 16-21, paper CTuKK6 (2010).


A. Yoshida, A. Schmidt, H. Zhang, J. Wang, J. Liu, C. Fiebig, K. Paschke, G. Erbert, V. Petrov, and U. Griebner
"Sub-50 fs Diode-Pumped Yb:YCOB Laser"
Conf. on Lasers and Electro-Optics (CLEO/QELS), San Jose, CA, May 16-21, paper CTuV3 (2010).


C.M. Schultz, P. Crump, H. Wenzel, O. Brox, A. Maaßdorf, G. Erbert and G. Tränkle
"11W Broad Area 976nm DFB Lasers with 58% Efficiency"
Conf. on Lasers and Electro-Optics (CLEO/QELS), San Jose, CA, May 16-21, paper CWE1 (2010).


H. Wenzel, P. Crump, A. Pietrzak, X. Wang, G. Erbert and G. Tränkle
"Theoretical and experimental investigations of the limits to the maximum output power of laser diodes"
New J. Phys., vol. 12, no. 085007 (2010).


M. Spreemann, B. Eppich, F. Schnieder, H. Wenzel, and G. Erbert
"Modal Behavior, Spatial Coherence, and Beam Quality of a High-Power Gain-Guided Laser Array"
IEEE J. Quantum Electron., vol. 46, no. 11, pp. 1619-1625 (2010).


G. Blume, D. Feise, H. Dittrich, Chr. Kaspari, K. Paschke, and G. Erbert
"Red-emitting tapered diode lasers for display applications"
Proc. of SPIE, vol. 7720, no. 77201B (2010).


N. Lobo, H. Rodriguez, A. Knauer, M. Hoppe, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl
"Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector"
Appl. Phys. Lett., vol. 96, no. 081109 (2010).


E. Richter, U. Zeimer, S. Hagedorn, M. Wagner, F. Brunner, M. Weyers, G. Tränkle
"Hydride vapor phase epitaxy of GaN boules using high growth rates"
J. Cryst. Growth, vol. 312, no. 18, pp. 2537-2541 (2010).


S. Marschall, T. Klein, W. Wieser, B.R. Biedermann, K. Hsu, K.P. Hansen, B. Sumpf, K.-H. Hasler, G. Erbert, O.B. Jensen, C. Pedersen, R. Huber, and P.E. Andersen
"Fourier domain mode-locked swept source at 1050 nm based on a tapered amplifier"
Opt. Express, vol. 18, no. 15, pp. 15820-15831 (2010).


W. Neumann, A. Mogalitenko, T. Wernicke, E. Richter, M. Weyers and M. Kneissl
"Structure investigations of nonpolar GaN layers"
Journal of Microscopy, vol. 237, no. 3, pp. 308-313 (2010).


S. Pekarek, C. Fiebig, M.C. Stumpf, A.E.H. Oehler, K. Paschke, G. Erbert, T. Südmeyer, and U. Keller
"Diode-pumped gigahertz femtosecond Yb:KGW laser with a peak power of 3.9 kW"
Opt. Express, vol. 18, no. 16, pp. 16320-16326 (2010).


U. Pursche, J. Flucke, A. Wentzel, S. Freyer, C. Meliani, and W. Heinrich
"Broadband 20-Ω 20-W Load Suitable for Characterization of Switch-Mode Amplifiers"
IEEE Trans. Instrum. Meas., vol. 59, no. 9, pp. 2431-2436 (2010).


S. Spießberger, M. Schiemangk, A. Wicht, H. Wenzel, O. Brox, and G. Erbert
"Narrow Linewidth DFB Lasers Emitting Near a Wavelength of 1064 nm"
J. Lightwave Technol., vol. 28, no. 17, pp. 2611-2616 (2010).


C. Bansleben, S. Kühn, N. Gay, W.-J. Fischer
"Temporally Resolved Impedance Measurement of Differential, RF-Powered Devices using the Example of a µWave RFID Front-End"
IEEE MTT-S Int. Microw. Symp. Dig., Anaheim, CA, May 25-27, pp. 852-855 (2010).


F.J. Schmückle, U. Pursche, W. Heinrich, J. Purden
"A 77 GHz Broadband Flip-Chip Transition on LTCC Submount"
IEEE MTT-S Int. Microw. Symp. Dig., Anaheim, CA, May 25-27, pp. 453-456 (2010).


E. Bahat-Treidel, O. Hilt, F. Brunner, J. Würfl, and G. Tränkle
"AlGaN/GaN/AlGaN Double Heterojunction HEMTs on n-type SiC Substrates"
phys. stat. sol (c), vol. 7, no. 10, pp. 2408-2411 (2010).


H. Mostardinha, P.M. Cabral, N.B. Carvalho, P. Kurpas, M. Rudolph, J. Würfl, J.C. Pinto, A. Barnes, and F. Garat
"GaN RF Oscillator Used in Space Applications"
Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC 2010), Goteborg, Sweden, April 26-27, pp.50-53 (2010).


P. Kurpas, I. Selvanathan, M. Schulz, H. Sahin, P. Ivo, M. Matalla, J. Splettstoesser, A. Barnes, J. Würfl
"Stable and reproducible AlGaN/GaN-HFET processing highly tolerant for epitaxial quality variations"
Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2010), Portland, USA, May 17-20, pp. 141-144 (2010).


R. Sohal, P. Dudek, O. Hilt
"Comparative study of NH4OH and HCl etching behaviours on AlGaN surfaces"
Appl. Surf. Sci., vol. 256, no. 7, pp. 2210-2214 (2010).


O. Hilt, A. Knauer, F. Brunner, E. Bahat-Treidel and J. Würfl
"Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN Buffer"
Int. Symp. on Power Semiconductor Devices & IC's (ISPSD 2010), Hiroshima, Japan, Jun. 6-10, pp. 347-350 (2010).


A. Wentzel, C. Meliani, W. Heinrich
"A Voltage-Mode Class-S Power Amplifier for the 450MHz Band"
European Microwave Conf. (EuMC 2010), Paris, France, Sep. 28-30, pp. 640-643 (2010).


S. Ploch, M. Frentrup, T. Wernicke, M. Pristovsek, M. Weyers, M. Kneissl
"Orientation control of GaN {1122} and {1013} grown on (1010) sapphire by metal-organic vapor phase epitaxy"
J. Cryst. Growth, vol. 312, no. 15, pp. 2171-2174 (2010).


H. Rodriguez, N. Lobo, S. Einfeldt, A. Knauer, M. Weyers, and M. Kneissl
"GaN-based ultraviolet light-emitting diodes with multifinger contacts"
phys. stat. sol. (a), vol. 207, no. 11, pp. 2585-2588 (2010).


M. Rudolph, P. Heymann, and H. Boss
"Impact of Receiver Bandwidth and Nonlinearity on Noise Measurement Methods"
IEEE Microwave Mag., vol. 11, no. 6, pp. 110-121 (2010).


M. Rudolph
"Modeling GaN Power Transistors"
IEEE Annual Wireless and Microwave Technology Conf. (WAMICON 2010), Melbourne, FL, Apr. 12-13, pp. 1-4 (2010).


M. Rudolph
"Compact HBT modeling: status and challenges"
IEEE MTT-S Int. Microw. Symp. Dig., Anaheim, CA, May 25-27, pp. 1206-1209 (2010).


M. Rudolph and W. Heinrich
"Assessment of power-transistor package models: distributed versus lumped approach"
European Microwave Integrated Circuits Conf. (EuMIC 2010), Paris, France, Sep. 27-28, pp. 86-89 (2010).


H.P.H. Cheng, O.B. Jensen, P. Tidemand-Lichtenberg, P.E. Andersen, P.M. Petersen, B. Sumpf, G. Erbert, C. Pedersen
"Efficient quasi-three-level Nd:YAG laser at 946 nm pumped by a tunable external cavity tapered diode laser"
Opt. Commun., vol. 283, no. 23, pp. 4717-4721 (2010).


A. Hamidian, V. Subramanian, R. Doerner, G. Boeck
"A 60 GHz 18 dBm Power Amplifier Utilizing 0.25 µm SiGe HBT"
European Microwave Integrated Circuits Conf. (EuMIC 2010), Paris, France, Sep. 27-28, pp. 444-447 (2010).


V. Hoffmann, C. Netzel, U. Zeimer, A. Knauer, S. Einfeldt, F. Bertram, J. Christen, M. Weyers, G. Tränkle, M. Kneissl
"Well width study of InGaN multiple quantum wells for blue-green emitter"
J. Cryst. Growth, vol. 312, no. 23, pp. 3428-3433 (2010).


T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N.M. Johnson, M. Weyers, and M. Kneissl
"Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes"
Appl. Phys. Lett., vol. 97, no. 171105 (2010).


U. Schmid, R. Reber, C. Chartier, K. Widmer, M. Oppermann, W. Heinrich, C. Meliani, R. Quay, S. Maroldt
"GaN devices for communication applications - evolution of amplifier architectures"
Int. J. Microwave Wireless Technolog., vol. 2, no. 1, pp. 85-93 (2010).


E. Bahat-Treidel, F. Brunner, O. Hilt, E. Cho, J. Würfl, and G. Tränkle
"AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low RON × A"
IEEE Trans. Electron Devices, vol. 57, no. 11, pp. 3050-3058 (2010).


T. Schlauch, J.C. Balzer, A. Klehr, G. Erbert, G Tränkle, and M.R. Hofmann
"Femtosecond passively modelocked diode laser with intracavity dispersion management"
Opt. Express, vol. 18, no. 23, pp. 24316-24324 (2010).


A. Jechow, R. Menzel, K. Paschke, and G. Erbert
"Blue-green light generation using high brilliance edge emitting diode lasers"
Laser Photonics Rev., vol. 4, no. 5, pp. 633-655 (2010).


D. Gruner, R. Sorge, O. Bengtsson, A. Al Tanany, and G. Boeck
"Analysis, Design, and Evaluation of LDMOS FETs for RF Power Applications up to 6 GHz"
IEEE Trans. Microwave Theory Tech., vol. 58, no. 12, pp. 4022-4030 (2010).


N. Collings, M. Reufer, R.V. Penty, B. Sumpf, M. Safer, D.P. Chu, W.A. Crossland
"Holographic projection based on tapered lasers and nematic liquid crystal on silicon devices"
Proc. SPIE, vol. 7775, no. 777504 (2010).


D. Gruner, R. Sorge, O. Bengtsson, G. Boeck
"CMOS Compatible Medium Voltage LDMOS Transistors for Wireless Applications up to 5.8 GHz"
European Microwave Integrated Circuits Conf. (EuMIC 2010), Paris, France, Sep. 27-28, pp. 146-149 (2010).


M. Gregor, C. Pyrlik, R. Henze, A. Wicht, A. Peters, and O. Benson
"An alignment-free fiber-coupled microsphere resonator for gas sensing applications"
Appl. Phys. Lett., vol. 96, no. 231102 (2010).


J. Wueppen, E. Pawlowski, M. Traub, B. Jungbluth, K.-H. Hasler, B.Sumpf, G.Erbert
"Compact module of a frequency-doubled, cw diode laser with an output power of more than 500 mW at 531 nm and a beam quality of less than 1.3"
Proc. SPIE, vol. 7582, no. 758204 (2010).


C. Brenner, M. Hofmann, M. Scheller, M.K. Shakfa, M. Koch, I.C. Mayorga, A. Klehr, G. Erbert, and G. Tränkle
"Compact diode-laser-based system for continuous-wave and quasi-time-domain terahertz spectroscopy"
Opt. Lett., vol. 35, no. 23, pp. 3859-3861 (2010).


A. Klehr, A. Liero, Th. Hoffmann, J. Schulz, S. Schwertfeger, H. Wenzel, G. Erbert, W. Heinrich and G. Tränkle
"Micro bench for optical pulse picking from 4 GHz pulse trains generated by mode locking of DBR lasers"
3rd Electronic System-Integration Technology Conference (ESTC), Berlin, Germany, Sep. 13-16, pp. 1-4 (2010).


T. Ulm, A. Klehr, G. Erbert, F. Harth, J.A. L’huillier
"Femtosecond diode laser MOPA system at 920 nm based on asymmetric colliding pulse mode-locking"
Appl. Phys. B, vol. 99, no. 3, pp. 409-414 (2010).


A. Yoshida, A. Schmidt, H. Zhang, J. Wang, J. Liu, C. Fiebig, K. Paschke, G. Erbert, V. Petrov and U. Griebner
"42-fs diode-pumped Yb:Ca4YO(BO3)3 oscillator"
Opt. Express, vol. 18, no. 23, pp. 24325-24330 (2010).


C. Fiebig, G. Blume, D. Feise, D. Jedrzejczyk, A. Sahm, M. Uebernickel, K. Paschke, and G. Erbert
"1 W at 490 nm on a compact micro-optical bench by single-pass second harmonic generation"
Proc. SPIE, vol. 7582, no. 75821O (2010).


S. Marschall, T. Klein, W. Wieser, B. Biedermann, K. Hsu, B. Sumpf, K.-H. Hasler, G. Erbert, O.B. Jensen, Ch. Pedersen, R. Huber, P.E. Andersen
"FDML swept source at 1060 nm using a tapered amplifier"
Proc. SPIE, vol. 7554, no. 75541H (2010).


J. Fricke, F. Bugge, A. Ginolas, W. John, A. Klehr, M. Matalla, P. Ressel H. Wenzel, G. Erbert
"Broad-area lasers with internal surface Bragg gratings for wavelength stabilization at 980nm"
IEEE Int. Semiconductor Laser Conf. (ISLC), Kyoto, Japan, Sep. 26-30, pp. 148-149 (2010).