L. Hofmann, A. Klehr, A. Knauer, V.B. Smirnitski, J. Sebastian, G. Erbert
"120 mW tunable DBR lasers emitting at 1060 nm"
Electronics Letters, Vol. 36, No. 1, pp. 38-39, 2000.

L. Hofmann, A. Klehr, F. Bugge, H. Wenzel, V. Smirnitski, J. Sebastian, G. Erbert
"180 mW DBR lasers with first-order gratings in GaAs emitting at 1062 nm"
Electronics Letters, Vol. 36, No. 6, pp. 534-535, 2000.

L. Hofmann, A. Knauer, I. Rechenberg, M. Weyers
"MOVPE growth of (AlGa)As and (InGa)P on GaAs-based trenches"
Inst. Phys. Conf. Ser. 166, pp. 75-78, 2000.

L. Hofmann, A. Knauer, I. Rechenberg, U. Zeimer, M. Weyers
"Comparison of binary and ternary growth over trenches using MOVPE"
J. Cryst. Growth 213, pp. 229-234, 2000.

H. Wenzel, A. Klehr, G. Erbert, J. Sebastian, G. Tränkle and M.F. Pereira, Jr.
"Effect of band gap renormalization on threshold current and efficiency of a distributed Bragg reflector laser"
Applied Physics Letters, Vol. 76, No. 19, pp. 2653-2655, 2000.

G. Erbert, G. Beister, A. Knauer, J. Maege, W. Pittroff, P. Ressel, J. Sebastian, R. Staske, H. Wenzel, M. Weyers, G. Tränkle
"Al-free 950nm BA diode lasers with high efficiency and reliability at 50°C ambient temperature"
Proceedings of SPIE, Volume 3945, pp. 301-307, 2000.

H. Wenzel, G. Erbert, F. Bugge, A. Knauer, J. Maege, J. Sebastian, R. Staske, K. Vogel, G. Tränkle
"Optimization of GaAsP-QWs for High Power Diode Lasers at 800 nm"
Proceedings of SPIE, Volume 3947, pp. 32-39, 2000.

H. Wenzel, G. Erbert, A. Knauer, A. Oster, K. Vogel and G. Tränkle
"Influence of current spreading on the transparency current density of quantum-well lasers"
Semicond. Sci. Technol. vol. 15, pp. 557-560, 2000.

H. Kuhnert, W. Heinrich, W. Schwerzel, A. Schüppen
"25 GHz MMIC Oscillator fabricated using commercial SiGe-HBT Process"
Electronics Letters, vol.36, No. 3, pp. 218-220, 2000.

P. Heymann, R. Doerner, and M. Rudolph
"Harmonic Tuning of Power Transistors by Active Load-Pull Measurement"
Microwave Journal, vol. 43, pp. 22 - 37, June 2000.

T. Tischler, W. Heinrich
"The Perfectly Matched Layer as Lateral Boundary in Finite-Difference Transmission-Line Analysis"
2000 Int. Microwave Symp. Digest, Vol. 1, pp. 121-124.

N.-H. Huynh, W. Heinrich, K. Hirche, W. Scholz, M. Warth, W. Ehrlinger
"Optimized Flip-Chip Interconnect for 38 GHz Thin-Film Microstrip Multichip Modules"
2000 Int. Microwave Symp. Digest, Vol. 1, pp. 69-72.

W. Heinrich, F. Schnieder, and T. Tischler
"Dispersion and Radiation Characteristics of Conductor-Backed CPW with Finite Ground Width"
2000 Int. Microwave Symp. Digest, Vol. 3, pp. 1663-1666.

F. Lenk, R. Doerner
"Improved Parameter Extraction of Small-Sized FETs for Low-Power Applications"
2000 Int. Microwave Symp. Digest, Vol. 3, 1389-1392.

C.N. Rheinfelder, H. Kuhnert, J.-F. Luy, W. Heinrich, A. Schüppen, "SiGe MMICs beyond 20 GHz on a Commercial Technology"
2000 Int. Microwave Symp. Digest, Vol. 2, pp. 727-730.

M. Rudolph, R. Doerner, K. Beilenhoff, P. Heymann
"Scalable GaInP/GaAs HBT Large-Signal Model"
2000 Int. Microwave Symp. Digest, Vol. 2, 753-756.

E. Nebauer, M. Mai, J. Würfl, W. Österle
"Au/Pt/Ti/Pt base contacts to n-InGaP/p⁺-GaAs for self-passivating HBT-ledge structures"
Semicond. Sci. Technol., vol. 15, pp. 818-822, 2000.

I. Rechenberg, A. Klehr, U. Richter, W. Erfurth, F. Bugge, A. Klein
"Interdiffusion-induced degradation of 1017 nm ridge waveguide laser diodes"
J. Cryst. Growth 210, pp. 307-312, 2000.

A. Knauer, F. Bugge, G. Erbert, H. Wenzel, K. Vogel, U. Zeimer, M. Weyers
"Optimization of GaAsP/AlGaAs-Based QW Laser Structures for High Power 800 nm Operation"
J. of Electronic Mat., 29, 1, pp. 53-56, 2000.

F. Bugge, A. Knauer, S. Gramlich, I. Rechenberg, G. Beister, J. Sebastian, H. Wenzel, G. Erbert, M. Weyers
"MOVPE Growth of AlGaAs/GaInP Diode Lasers"
J. of Electronic Mat., 29, 1, pp. 57-61, 2000.

M. Zorn, P. Kurpas, A. Bhattacharya, M. Weyers, J.-T. Zettler, W. Richter
"Correlation of InGaP(001) surface structure during growth and CuPt_B-type bulk ordering"
Mat. Res. Soc. Symp. Proc. 583 (2000) 217.

K. Haberland, A. Bhattacharya, M. Zorn, M. Weyers, J.-T. Zettler, W. Richter
"MOVPE growth of (Al,Ga)InP based laser structures monitored by real-time Reflectance Anisotropy Spectroscopy"
J. Electron. Mater. 29 (2000) 468.

I. Hähnert, A. Knauer, R. Schneider, I. Rechenberg, A. Klein and W. Neumann
"{110} and {111} Ordering in MOVPE-grown Ga0.5In0.5P on (001) GaAs Substrates at Low Temperature"
Cryst. Res.Technol. vol.35, (2000) pp.831-837.

P. Krispin, M. Asghar, A. Knauer, H. Kostial
"Interface properties of isotype GaAs/(In,Ga)P/GaAs heterojunctions grown by metalorganic-vapour-phase epitaxy on GaAs"
J. Cryst. Growth 220 (2000) 220-225.

A. Bhattacharya, M. Zorn, A. Oster, M. Nasarek, H. Wenzel, J. Sebastian, M. Weyers, G. Tränkle
"Optimization of MOVPE growth for 650 nm-emitting VCSELs"
J. Cryst. Growth 221 (2000) 663-667.

M. Rudolph, R. Doerner, K. Beilenhoff, P. Heymann
"Scalable GaInP/GaAs HBT Large-Signal Model"
IEEE Trans. Microwave Theory Tech., Vol. 48, No. 12, December 2000, pp. 2370 - 2376.

T. Tischler, W. Heinrich
"The Perfectly Matched Layer as Lateral Boundary in Finite-Difference Transmission-Line Analysis"
IEEE Trans. Microwave Theory Tech., Vol. 48, No. 12, December 2000, pp. 2249 - 2253.

F. Brunner, T. Bergunde, E. Richter, P. Kurpas, M. Achouche, A. Maaßdorf, J. Würfl and M. Weyers
"Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor"
J. Cryst. Growth 221(2000)53-58.

F. Bugge, U. Zeimer, S. Gramlich, I. Rechenberg, J. Sebastian, G. Erbert and M. Weyers
"Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050 nm"
J. Cryst. Growth 221(2000)496-502.

T. Hannappel, S. Visbeck, M. Zorn, J. -T. Zettler and F. Willig
"Reflectance anisotropy spectra for the transition from the P-rich to the In-rich surface reconstruction of InP (100)"
J. Cryst. Growth 221(2000)124-128.

M. Achouche, T. Spitzbart, P. Kurpas, F. Brunner, J. Würfl and G. Tränkle
"High performance InGaP/GaAs HBTs for mobile communications"
Electron. Lett. 36 (2000) 1073-1075.

F. Brunner, E. Richter, T. Bergunde, I. Rechenberg, A. Bhattacharya, A. Maaßdorf, J.W. Tomm, P. Kurpas, M. Achouche, J. Würfl and M. Weyers
"Effect of High-Temperature Annealing on GaInP/GaAs HBT Structures Grown by LP-MOVPE"
J. Electron. Mat. 29 (2000) 205-209.

J. Hilsenbeck, W. Rieger, J. Würfl, R. Dimitrov and O. Ambacher
"Technology and performance of AlGaN/GaN based polarization induced HEMTs with improved contact design"
Inst. Phys. Conf. Ser., vol 166 (2000), pp. 507-510.

J. Hilsenbeck, E. Nebauer, J. Würfl, G. Tränkle and H. Obloh, "Aging behaviour of AlGaN/GaN HFETs with advanced ohmic and Schottky contacts"
Electron. Lett., vol 36 no 11 (2000), pp. 980-981.

J. Würfl, J. Hilsenbeck, E. Nebauer, G. Tränkle, H. Obloh, W. Österle
"Reliability of AlGaN/GaN HFETs comprising refractory ohmic and Schottky contacts"
Microelectronics Reliability, vol 40 (2000), pp. 1689-1693.

U. Zeimer, E. Nebauer
"High resolution X-ray diffraction investigations of He-implanted GaAs"
Semicond. Sci. Technol. 15 (2000) 965 - 970.

U. Pietsch, U. Zeimer, L. Hofmann, J. Grenzer and S. Gramlich
"Strain induced modulation in AlGaAs overlayers induced by lateral surface gratings"
MRS Proc. V 616 (2000).

A. Klehr, F. Bugge, G. Erbert, L. Hofmann, A. Knauer, J. Sebastian, V. B. Smirnitski, H. Wenzel, and G. Tränkle
"300 GHz continuously tunable high power three section DBR laser diode at 1060 nm"
Inst. Phys. Conf. Ser. No 166, pp. 383-386 (2000).

U. Griebner, R. Grunwald, H. Schönnagel, J. Huschke, and G. Erbert
"Laser with guided pump and free-propagating resonator mode using diffusion-bonded rectangular channel waveguides"
Appl. Phys. Lett. 77, 3505-3507 (2000).

U. Griebner, J. Huschke, R. Grunwald, H. Schoennagel, and G. Erbert
"Cladding-pumped Yb:YAG planar waveguide lasers"
in Advanced Solid-State Lasers (2000), H. Injeyan, U. Keller, and C. Marshall, Editors, OSA Trends in Optics and Photonics 34 (2000), pp. 431-433.

H. Kuhnert and W. Heinrich
"5 to 25 GHz SiGe MMIC Oscillators on a Commercial Process"
2000 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Digest, Garmisch, pp. 60-63, April 2000.