M. Pristovsek, M. Zorn, M. Weyers
"In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy"
Journal of Crystal Growth 262 (2004) 78-83.

M. Zorn, A. Knigge, U. Zeimer, A. Klein, H. Kissel, M. Weyers, G. Tränkle
"MOVPE growth of visible vertical-cavity surface-emitting lasers (VCSELs)"
Journal of Crystal Growth 248 (2003) 186-193.

K. Haberland, M. Zorn, A. Klein, A. Bhattacharya, M. Weyers, J.-T. Zettler, W. Richter
"In-situ determination of interface roughness in MOVPE-grown visible VCSELs by reflectance spectroscopy"
Journal of Crystal Growth 248 (2003) 194-200.

T. Bergunde, B. Henninger, M. Lünenbürger, M. Heuken, M. Weyers, J.-T. Zettler
"Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors"
Journal of Crystal Growth 248 (2003) 235-239.

F. Bugge, M. Zorn, U. Zeimer, T. Sharma, H. Kissel, R. Hülsewede, G. Erbert, M. Weyers
"Highly strained very high-power laser diodes with InGaAs QWs"
Journal of Crystal Growth 248 (2003) 354-358.

A. Knauer, P. Krispin, V.R. Balakrishnan, M. Weyers
"Properties of (In,Ga)(As,P)/GaAs interfaces grown under different metalorganic vapor phase epitaxy conditions"
Journal of Crystal Growth 248 (2003) 364-368.

F. Schnieder, T. Tischler, and W. Heinrich
"Modeling Dispersion and Radiation Characteristics of Conductor-Backed CPW with Finite Ground Width"
IEEE Trans. Microwave Theory Tech., vol. 51, no. 1, pp. 137-143, Jan. 2003.

U. Zeimer, J. Grenzer, S. Grigorian, J. Fricke, S. Gramlich, F. Bugge, U. Pietsch, M. Weyers, and G. Tränkle
"Influence of lateral patterning geometry on lateral carrier confinement in strain-modulated InGaAs-nanostructures"
phys. stat. sol. (a) 195, No. 1, 178-182 (2003).

J.W. Tomm, T. Elsaesser, Yu.I. Mazur, H. Kissel, G.G. Tarasov, Z.Ya. Zhuchenko, W.T. Masselink
"Transient luminescence of dense InAs/GaAs quantum dot arrays"
Physical Review B 67 (4), 045326 (2003).

G. Erbert, J. Fricke, R. Hülsewede, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, B. Sumpf, H. Wenzel and G. Tränkle
"3 W - high brightness tapered diode lasers at 735 nm based on tensile strained GaAsP-QWs"
Proceedings of SPIE Vol. 4995 (2003).

K. Paschke, R. Güther, J. Fricke, F. Bugge, G. Erbert, and G. Tränkle
"High power and high spectral brightness in 1060 nm α-DFB lasers with long resonators"
Electronics Letters, Vol. 39, No. 4, pp. 369-370, 2003.

F. Lenk, M. Schott, J. Hilsenbeck, J. Würfl, W. Heinrich
"Low Phase-Noise Monolithic GaInP/GaAs-HBT VCO for 77 GHz"
IEEE MTT-S Int. Microwave Symp. Dig., 2003, pp. 903-906.

M. Rudolph, F. Schnieder, W. Heinrich
"Modeling Emitter Breakdown in GaAs-Based HBTs"
IEEE MTT-S Int. Microwave Symp. Dig., 2003, pp. 651-654.

Th. Tischler, M. Rudolph, A. Kilk, W. Heinrich
"Via Arrays for Grounding in Multilayer Packaging - Frequency Limits and Design Rules"
IEEE MTT-S Int. Microwave Symp. Dig., 2003, pp. 1147-1150.

K.M. Strohm, F.J. Schmückle, O. Yaglioglu, J.-F. Luy, W. Heinrich
"3D Silicon Micromachined RF Resonators"
IEEE MTT-S Int. Microwave Symp. Dig., 2003, pp. 1801-1804.

F.J. Schmückle, A. Jentzsch, C. Gässler, P. Marschall, D. Geiger, W. Heinrich
"40 GHz Hot-Via Flip-Chip Interconnects"
IEEE MTT-S Int. Microwave Symp. Dig., 2003, pp. 1167-1170.

M.P. Semtsiv, G.G. Tarasov, W.T. Masselink, H. Kissel, M. Woerner
"Midinfrared intersubband absorption in strain-compensated InGaP/InGaAs superlattices on (001) GaAs"
Appl. Phys. Lett. 82 (20), 3418-3420 (2003).

Yu.I. Mazur, H. Kissel, H. Yang, G.J. Salamo, M. Xiao
"Formation of low-density InAs/InP (001) quantum dot arrays"
Proc. SPIE 5065, 219-225 (2003).

A. Knigge, M. Zorn, J. Sebastian, K. Vogel, H. Wenzel, M. Weyers, and G. Tränkle
"High-efficiency AlGaInP/AlGaAs vertical-cavity surface-emitting lasers with 650 nm wavelength"
IEE Proc.-Optoelectron., Vol. 150, No. 2, April 2003 , pp. 110-114.

Yu.I. Mazur, Z.M. Wang, G.J. Salamo, M. Xiao, G.G. Tarasov, Z.Ya. Zhuchenko, W.T. Masselink, H. Kissel
"Hidden resonant excitation of photoluminescence in bilayer arrays of InAs/GaAs quantum dots"
Appl. Phys. Lett. 83 (9), 1866-1868 (2003).

H. Wenzel, B. Sumpf, G. Erbert
"High-brightness diode lasers"
Comptes Rendus Physique 4 (2003) 649-661.

M.F. Pereira, H. Wenzel
"The influence of many body and electron nonparabolicity effects in the intersubband optical spectra of III-V quantum wells"
Microelectronic Engineering 69 (2003) 261-264.

Vas.P. Kunets, Z.Ya. Zhuchenko, H. Kissel, U. Müller, G.G. Tarasov, W.T. Masselink
"Many-body effects as probe of defects presence in heavily doped AlGaAs/InGaAs/GaAs heterostructures"
Inst. Phys. Conf. Ser. No 174, 81-84 (2003).

Z.Ya. Zhuchenko, J.W. Tomm, H. Kissel, Yu.I. Mazur, G.G. Tarasov, W.T. Masselink
"Spectroscopy of high-density assemblage of InAs/GaAs quantum dots"
Inst. Phys. Conf. Ser. No 174, 165-168 (2003).

J. Hilsenbeck, F. Brunner, F. Lenk, J. Würfl
"Fabrication and electrical performance of oscillators in GaInP/GaAs-HBT MMIC technology up to 40 GHz"
Inst. Phys. Conf. Ser. No 174, 239-242 (2003).

Vas.P. Kunets, U. Müller, J. Dobbert, R. Pomraenke, G.G. Tarasov, W.T. Masselink, H. Kostial, H. Kissel, Yu.I. Mazur
"Generation-recombination noise in doped-channel Al_0.3Ga_0.7As/GaAs/In_0.2Ga_0.8As quantum well micro-Hall devices"
J. of Appl. Phys. 94 (12), pp. 7590-7593 (2003).

S.A. Grigorian, J. Grenzer, S. Feranchuk, U. Zeimer and U. Pietsch
"Grazing-incidence diffraction study of strain-modulated single quantum well nanostructures"
J. Phys. D: Appl. Phys. 36 (2003) A222-A224.

K. Paschke, A. Bogatov, A.E. Drakin, R. Güther, A.A. Stratonnikov, H. Wenzel, G. Erbert, and G. Tränkle
"Modeling and Measurements of the Radiative Characteristics of High-Power α-DFB Lasers"
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 9, No. 3, pp. 835-843, 2003.

S. Sujecki, L. Borruel, J. Wykes, P. Moreno, B. Sumpf, P. Sewell, H. Wenzel, T.M. Benson, G. Erbert, I. Esquivias, and E.C. Larkins
"Nonlinear Properties of Tapered Laser Cavities"
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 9, No. 3, pp. 823-834, 2003.

H. Wenzel
"Green's Function Based Simulation of the Optical Spectrum of Multisection Lasers"
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 9, No. 3, pp. 865-871, 2003.

B. Sumpf, S. Deubert, G. Erbert, J. Fricke, J.P. Reithmaier, A. Forchel, R. Staske and G. Tränkle
"High-power 980 nm quantum dot broad area lasers"
Electronics Letters, 13th November 2003, Vol. 39, No. 23.

F. Brunner, A. Braun, P. Kurpas, J. Schneider, J. Würfl, M. Weyers
"Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE"
Microelectronics Reliability 43 (2003) 839-844.

K.M. Strohm, F.J. Schmückle, B. Schauwecker, W. Heinrich, J.F. Luy
"Mikrostrukturierte HF-Leitungs- und Resonatorstrukturen"
Frequenz 57 3-4/2003 62-69.

K. Paschke, A. Bogatov, F. Bugge, A.E. Drakin, J. Fricke, R. Güther, A.A. Stratonnikov, H. Wenzel, G. Erbert, G. Tränkle
"Properties of Ion-Implanted High-Power Angled-Grating Distributed-Feedback Lasers"
IEEE Journal of Selected Topics in Quantum Electronics, vol. 9, 1172-1178 (2003).

G. Hebermehl, F.-K. Hübner, R. Schlundt, T. Tischler, H. Zscheile, W. Heinrich
"Perfectly Matched Layers in Transmission Lines"
Numerical Mathematics and Advanced Applications, ENUMATH 2001, S. 281-290, Springer Verlag, 2003.

T.K. Sharma, S.D. Singh, S. Porwal, A. Knauer, U. Zeimer, H. Kissel, M. Weyers and K.C. Rustagi
"Characterization of InGaAsP epitaxial layers grown by MOVPE near the miscibility gap"
Proc. Int. Workshop on Physics of semiconductor Devices, 16-20 December 2003, p. 943, IIT, Chennai, India.

B. Sumpf, R. Hülsewede, G. Erbert, C. Dzionk, J. Fricke, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian und G. Tränkle
"High brightness 735 nm tapered lasers - optimisation of the laser geometry"
Optical and Quantum Electronics, vol. 25, 521-532 (2003).

H. Wenzel
"Designing high-power single-frequency lasers"
Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 31-34 (2003).

U. Zeimer, H. Kirmse, J. Grenzer, S. Grigorian, H. Kissel, A. Knauer, U. Pietsch, W. Neumann, M. Weyers, G. Tränkle
"Analysis of strain and composition distribution in laterally strain-modulated InGaAs nanostructures after overgrowth with GaAs or InGaP"
Inst. Phys. Conf. Ser. No 180 pp. 139-142; Paper presented at Microsc. Semicond. Mater. Conf., Cambridge, 31 March - 3 April 2003.

B. Ullrich, R. Schroeder, A. Knigge, M. Zorn, M. Weyers
"In situ analysis of a vertical-cavity surface-emitting laser active layer by two-photon spectroscopy"
Optical Engineering 42 (2003) 1152-1156.