2005

A. Bhattacharya, M. Nasarek, U. Zeimer, A. Klein, M. Zorn, F. Bugge, S. Gramlich, M. Weyers
"Comprehensive characterization of MOVPE-grown AlGaAs/AlAs distributed Bragg reflector structures by optical reflectance, X-ray diffraction and atomic force microscopy"
Journal of Crystal Growth 274 (2005) 331-338.


M. Pristovsek, M. Zorn, U. Zeimer, M. Weyers
"Growth of strained GaAsSb layers on GaAs(001) by MOVPE"
Journal of Crystal Growth 276 (2005) 347-353.


R. Gesche
"RF Matching of a Reactive Ion Etching (RIE) Plasma Reactor"
Frequenz, vol. 59 (2005), no. 3-4, pp. 73-76.


F.J. Schmückle
"Numerical Field Simulation used to develop high bit-rate coaxial-to-CPW-interconnects"
Frequenz, vol. 59 (2005), no. 3-4, pp. 59-65.


A. Knigge, G. Erbert, J. Jönsson, W. Pittroff, R. Staske, B. Sumpf, M. Weyers and G. Tränkle
"Passively cooled 940 nm laser bars with 73% wall-plug efficiency at 70 W and 25 °C"
Electronics Letters, vol. 41, no. 5, pp. 250-251 (2005).


Yu.I. Mazur, Zh.M. Wang, G.G. Tarasov, Min Xiao, G.J. Salamo, J.W. Tomm, V. Talalaev, H. Kissel
"Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures"
Applied Physics Letters 86, 063102 (2005).


R. Gesche, R. Kovacs and J. Scherer
"Mobile plasma activation of polymers using the plasma gun"
Surface & Coating Technology 200 (2005), pp. 544-547.


M. Zorn, M. Weyers
"Application of reflectance anisotropy spectroscopy to laser diode growth in MOVPE"
Journal of Crystal Growth 276 (2005) 29-36.


E. Richter, Ch. Hennig, M. Weyers, F. Habel, J.-D. Tsay, W.-Y. Liu, P. Brückner, F. Scholz, Yu. Makarov, A. Segal, J. Kaeppeler
"Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE"
Journal of Crystal Growth 277 (2005) 6-12.


E. Richter, Ch. Hennig, H. Kissel, G. Sonia, U. Zeimer, and M. Weyers
"Growth optimization for thick crack-free GaN layers on sapphire with HVPE"
phys. stat. sol. (c) 2, No. 7, 2099-2103 (2005).


W. Heinrich
"Flip-chip for millimeter-wave packaging"
IEEE Microwave Magazine, Vo. 6 (2005), No. 3, pp. 36-45.


A. Knauer, G. Erbert, R. Staske, B. Sumpf, H. Wenzel and M. Weyers
"High-power 808 nm lasers with a super-large optical cavity"
Semicond. Sci. Technol. 20 (2005) 621-624.


U. Griebner, S. Rivier, V. Petrov, M. Zorn, G. Erbert, M. Weyers, X. Mateos, M. Aguiló, J. Massons, F. Díaz
"Passively mode-locked Yb:KLu(WO4)2 oscillators"
Optics Express 13 (2005) 3465.


F. Bugge, H. Wenzel, B. Sumpf, G. Erbert, M. Weyers
"High-Performance Laser Diodes With Emission Wavelengths Above 1100 nm and Very Small Vertical Divergence of the Far Field"
IEEE Photonics Technology Letters, vol. 17, no. 6, 1145-1147, June (2005).


K.-H. Hasler, A. Klehr, H. Wenzel, G. Erbert
"Simulation of high-power pulse generation due to modelocking in long multisection lasers"
IEE Proc.-Optoelectron., Vol.152, No.2, April 2005.


F. Bugge, U. Zeimer, L. Wang, H. Wenzel, G. Erbert, M. Weyers
"Multi QWs for laser diodes with emission wavelengths above 1100 nm"
Proc. 11th European Workshop on Metalorganic Vapour Phase Epitaxy, June 2005, Lausanne, Switzerland, F06, p. 299-301.


R. Aleksiejunas, M. Sudzius, K. Jarasiunas, A. Maaßdorf, F. Brunner, M. Weyers
"Characterisation of heavily doped base layers of heterojunction bipolar transistors by time-resolved four-wave mixing technique"
Proc. 11th European Workshop on Metalorganic Vapour Phase Epitaxy, June 2005, Lausanne, Switzerland, B08, p. 143-145.


M. Weyers
"GaAs-based high power laser diodes"
Proc. 11th European Workshop on Metalorganic Vapour Phase Epitaxy, June 2005, Lausanne, Switzerland, p. 273-278.


M. Zorn, J.-T. Zettler, U. Zeimer, M. Weyers
"On the possiblity of in-situ composition determination during AlGaInP growth in MOVPE"
Proc. 11th European Workshop on Metalorganic Vapour Phase Epitaxy, June 2005, Lausanne, Switzerland, C03, p. 163-165.


M. Zorn, T.K. Tien, J.W. Tomm, H. Kissel, U. Zeimer, F. Saas, U. Griebner, M. Weyers
"MOVPE growth of semiconductor disk laser (SCDL) structures"
Proc. 11th European Workshop on Metalorganic Vapour Phase Epitaxy, June 2005, Lausanne, Switzerland, F09, p. 309-311.


Yu.I. Mazur, Zh.M. Wang, G.G. Tarasov, G.J. Salamo, J.W. Tomm, V. Talalaev, H. Kissel
"Nonresonant tunneling carrier transfer in bilayer asymmetric InAs/GaAs quantum dots"
Physical Review B 71, 235313 (2005).


F. Schnieder and W. Heinrich
"Thin-film microstrip lines and coplanar waveguides on semiconductor substrates for sub-mm wave frequencies"
Frequenz, vol. 59(2005), no. 5-6, pp. 137-140.


A.N. Pikhtin, O.S. Komkov, F. Bugge
"Effect of electric field on the probability of optical transitions in InGaAs/GaAs quantum wells observed by photo- and electroreflectance methods"
physica status solidi (a),Vol. 202(2005)7, pp. 1270-1274.


S.-S. Beyertt, U. Brauch, A. Giesen, E. Gerster, M. Zorn
"Direct Pumping of Quantum Wells Improves Performance of Semiconductor Thin-Disk Lasers"
Photonics Spectra, June 2005, pages 60-66.


R. Güther
"Optimisation of SHG for high-brightness semiconductor laser diode radiation with large aberrations"
DGaO-Proceedings, P44, 2005.


T.K. Sharma, M. Zorn, U. Zeimer, H. Kissel, F. Bugge, M. Weyers
"Highly strained InGaAs/GaAs quantum wells emitting beyond 1.2 µm"
Crystal Research and Technology 40 (2005) 877-881.


M. Rudolph, R. Doerner
"Large-Signal Modeling of High-Voltage GaAs Power HBTs"
IEEE MTT-S Int. Microwave Symp. Dig., 2005, pp. 457-460.


F.J. Schmückle, F. Lenk, M. Hutter, M. Klein, H. Oppermann, G. Engelmann, M. Töpper, K. Riepe, and W. Heinrich
"W-Band Flip-Chip VCO in Thin-Film Environment"
IEEE MTT-S Int. Microwave Symp. Dig., 2005, pp. 1007-1010.


M. Schott, F. Lenk, C. Meliani, and W. Heinrich
"Low Phase Noise X-Band Push-Push Oscillator with Frequency Divider"
IEEE MTT-S Int. Microwave Symp. Dig., 2005, pp. 1527-1530.


F. Lenk, R. Doerner
"A New Multiport Measurement-Method Using a Two-Port Network Analyzer"
IEEE MTT-S Int. Microwave Symp. Dig., 2005, pp. 1663-1666.


C. Meliani, M. Rudolph, and W. Heinrich
"A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analytical and Experimental Study"
IEEE MTT-S Int. Microwave Symp. Dig., 2005, pp. 1857-1860.


F. Lenk and W. Heinrich
"Recent Advances in Low-Noise Monolithic Signal Generation Techniques Above 10 GHz"
IEEE MTT-S Int., Workshop WMI, 2005.


M.F. Pereira, and H. Wenzel
"Microscopic theory for the valence intersubband absorption of quantum wells"
Microelectronic Engineering 81 (2005) 510-513.


M. Rudolph, and R. Doerner
"Consistent Modeling of Capacitances and Transit Times of GaAs-Based HBTs"
IEEE Trans. Electron Dev., vol. 52, no. 9, pp. 1969-1975, Sep. 2005.


U. Zeimer, U. Pietsch, J. Grenzer, J. Fricke, A. Knauer and M. Weyers
"Optimized two-layer overgrowth of a lateral strain-modulated nanostructure"
Journal of Alloys and Compounds Vol. 401 226-230 (2005).


S. Rivier, X. Mateos, V. Petrov, U. Griebner, A. Aznar, O. Silvestre, R. Sole, M. Aguilo, F. Diaz, M. Zorn and M. Weyers
"Mode-locked laser operation of epitaxially grown Yb:KLu(WO4)2 composites"
Optics Letters, Vol. 30, No. 18 / September 15 (2005) 2484-2486.


O. Casel, D. Woll, M.A. Tremont, H. Fuchs, R. Wallenstein, E. Gerster, P. Unger, M. Zorn and M. Weyers
"Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser"
Appl. Phys. B 81,443-446(2005).


Yu.I. Mazur, Zh.M. Wang, G.G. Tarasov, Vas.P. Kunets, G.J. Salamo, Z.Ya. Zhuchenko, H. Kissel
"Tailoring of high-temperature photoluminescence in InAs/GaAs bilayer quantum dot structures"
Journal of Applied Physics 98, 053515 (2005).


J. Fricke, H. Wenzel, M. Matalla, A. Klehr and G. Erbert
"980-nm DBR lasers using higher order gratings defined by i-line lithography"
Semicond. Sci. Technol. 20 (2005) 1149-1152.


A. Klehr, M. Braun, F. Bugge, G. Erbert, J. Fricke, A. Knauer, P. Ressel, H. Wenzel and G. Tränkle
"High-power ridge-wavequide broad-area lasers with a DFB resonator in the wavelength range 760- to 790-nm"
Proc. SPIE 5738, 416 (2005).


H. Wenzel, A. Klehr, M. Braun, J. Fricke, A. Knauer, P. Ressel and G. Erbert
"High-power 980-nm DFB diode lasers with a small vertical farfield divergence"
Conference Digest CLEO Europe / EQEC 2005, paper CB-92.


A. Knigge, G. Erbert, J. Jönsson, R. Staske, B. Sumpf, M. Weyers, G. Tränkle
"Passively cooled 940nm laser bar with 73% wall-plug efficiency and high reliability at 98 W quasi-cw output power"
Conference on Lasers and Electro-Optics (CLEO) Europe, München, 2005. Conference Digest, S. 108.


J. Fricke, H. Wenzel, M. Matalla, A. Klehr, and G. Erbert
"980-nm DBR lasers using higher order gratings fabricated in a single-step process"
Conference Digest CLEO Europe / EQEC 2005, paper CB-111.


A. Klehr, H. Wenzel, G. Erbert, G. Tränkle, T. Laurent, K. Haack
"852-nm distributed-feedback diode lasers for atomic clocks and laser cooling"
Conference Digest CLEO Europe / EQEC 2005, paper CB-290.


K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, J. Fricke, A. Ginolas, Ch. Dzionk, A. Knauer, H. Wenzel, and G. Tränkle
"5.3 W CW high brightness 980-nm tapered diode lasers"
Conference Digest CLEO Europe / EQEC 2005, paper CB-312.


M.F. Pereira, H. Wenzel
"Many Body and Nonparabolicity Effects in the Intersubband Transitions of Conduction and Valence Bands of Quantum Well Media"
Conference Digest CLEO Europe / EQEC 2005, paper EA-1279.


B. Sumpf, A. Ginolas; G. Erbert, A. Knauer, K. Paschke, W. Pittroff, R. Staske, G. Tränkle
"10 W reliable operation of 100 mm stripe width broad area lasers at 930 nm with small vertical far field"
Conference on Lasers and Electro-Optics (CLEO) Europe, München, 2005. Conference Digest, S. 111.


H. Wenzel, R. Güther
"A comparative study of higher order Bragg waveguide gratings using coupled-mode theory and mode expansion modeling"
Proceedings 5th International Conference on Numerical Simulation of Optoelectronic Devices, IEEE, p. 63-64 (2005).


H. Hardtdegen, N. Kaluza, R. Steins, Y.S. Cho, Z. Sofer, M. Zorn, K. Haberland, <nobr>J.-T. Zettler</nobr>
"Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides"
physica status solidi (b) 242 (2005) p. 2581-2586.


M. Zorn, <nobr>J.-T. Zettler</nobr>
"Development and control of MOVPE growth processes for devices using reflectance anisotropy spectroscopy and normalized reflectance"
physica status solidi (b) 242 (2005) p. 2587-2594.


B. Sumpf, S. Schwertfeger, J. Wiedmann, A. Klehr, F. Dittmar, G. Erbert, G. Tränkle
"5.3 W cw output power from a Master Oscillator Power Amplifier at 1083 nm"
Conference Optics East 2005 Optoelectronic devices; Physics, Fabrication, and Application II Proc. SPIE Vol. 6013 S.60130C-1 - 60130C-12.


M. Maiwald, G. Erbert, A. Klehr, B. Sumpf, H. Wenzel, H. Schmidt, H.-D. Kronfeldt
"Monolithic DFB laser diodes emitting at 785 nm for in situ SER Spectroscopy"
Conference Optics East 2005 Optoelectronic devices; Physics, Fabrication, and Application II Proc. SPIE Vol. 6013 S.Proc. of SPIE Vol. 5993 599305-1 - 599305-10.


V.P. Kunets, R. Pomraenke, J. Dobbert, H. Kissel, U. Müller, H. Kostial, E. Wiebicke, G.G. Tarasov, Y.I. Mazur, and W.T. Masselink
"Generation-Recombination Noise in Pseudomorphic Modulation-Doped Al0.2Ga0.8As/In0.1Ga0.9As/GaAs Micro-Hall Devices"
IEEE Sensors Journal, vol.5, no.5, Oct.2005.


Zh.M. Wang, Yu.I. Mazur, Sh. Seydmohamadi, G.J. Salamo, H. Kissel
"Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots"
Applied Physics Letters 87, 213105 (2005).


S.-S. Beyertt, M. Zorn, T. Kübler, H. Wenzel, M. Weyers, A. Giesen, G. Tränkle, U. Brauch
"Optical In-Well Pumping of a Semiconductor Disk Laser With High Optical Efficiency"
IEEE J. Quant. Electron. 41 (2005) 1439-1449.


V. Talalaev, J.W. Tomm, T. Elsaesser, U. Zeimer, J. Fricke, A. Knauer, H. Kissel, M. Weyers, G.G. Tarasov, J. Grenzer, U. Pietsch
"Carrier dynamics in laterally strain-modulated InGaAs quantum wells"
Applied Physics Letters 87, 262103 (2005).


K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, R. Staske, H. Wenzel, and G. Tränkle
"Nearly Diffraction Limited 980-nm Tapered Diode Lasers With an Output Power of 7.7 W"
IEEE J. of Sel. Top. in Quant. Electron., vol.11, no.5, Sep/Oct 2005, 1223-1227.


G. Erbert, F. Bugge, J. Fricke, P. Ressel, R. Staske, B. Sumpf, H. Wenzel, M. Weyers, and G. Tränkle
"High-Power High-Efficiency 1150-nm Quantum-Well Laser"
IEEE J. of Sel. Top. in Quant. Electron., vol.11, no.5, Sep/Oct 2005, 1217-1222.


P. Ressel, G. Erbert, U. Zeimer, K. Häusler, G. Beister, B. Sumpf, A. Klehr, G. Tränkle
"Novel Passivation Process for the Mirror Facets of Al-Free Active-Region High-Power Semiconductor Diode Lasers"
IEEE Photon. Techn. Lett. 17 (2005) 962-964.


M. Chi, O.B. Jensen, J. Holm, Chr. Pedersen, P.E. Andersen, G. Erbert, B. Sumpf, P.M. Petersen
"Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier"
Optics Express Vol. 13, No. 26; 10589-10596 (2005).


O. Krüger, G. Schöne, A. Liero, J. Würfl, and G. Tränkle
"Laser drilling of microvias in silicon carbide for AlGaN/GaN power transistors"
Proc. of the Third International WLT-Conference on Lasers in Manufacturing, Munich, Germany, June 2005, pp. 663-667, <nobr>AT-Fachverlag GmbH</nobr>.


G. Kaden, M. Mai
"Determination of Surface Recombination Velocity so and Carrier Lifetime τo from IF (VG) Characteristics of Al/PECVD-SiNx/pn-GaAs Gated Diodes"
Semiconductor Science and Technology, vol. 20 (2005), 1136-1142.


G. Erbert, H. Wenzel, B. Sumpf, A. Knigge, K. Paschke, P. Ressel, F. Bugge, G. Tränkle
"High power diode laser: physics and technology of key elements for modern laser applications"
Opitca pura y aplicada, vol. 38, no. 3 (2005), 51-57.


J. Skriniarova, A. Perduchova, M. Hruzik; M. Vesely, B. Bendjus, L. Haupt, I. Besse, and M. Herms
"Utilization of wet chemical etching for revealing defects in GaAs X-ray detector arrays"
Vacuum 80 (2005), pp. 218-222.


K. Linkenheil, H.-O. Ruoß, T. Grau, J. Seidel, and W. Heinrich
"A Novel Spark-Plug for Improved Ignition in Engines with Gasoline Direct Injection (GDI)"
IEEE Trans. on Plasma Science, Vol. 33 (2005) No. 5, pp. 1696-1702.


R. Lossy, A. Liero, J. Würfl, G. Tränkle
"High power, high gain AlGaN/GaN HEMTs with novel power bar design"
IEDM 2005 Washington, Technical digest, pp. 589-591.