- Laser diode system in the near-infrared wavelength range (Laser chip and passive optical components on micro-optical bench)
- Development of semiconductor layer structures and optimization of chip technology
- NIR: reliable output power of 15 W (cw) from 96 µm wide broad area laser [paper]
- Red spectral range: optimized growth parameter [paper]
- 1 W at 635 nm from a BA laser with 60 µm stripe width and > 3 W at 660 nm from a 100 µm stripe
- 0.79 W at 640 nm and 1.5 W at 660 nm from tapered laser [paper]
- Design of high-brilliance lasers for optical output powers > 5 W with good beam quality (M² < 3) and spectrally narrow emission in the NIR spectral range
- DBR tapered laser: high optical output power up to 12 W with excellent beam quality and narrow spectral emission [paper]
- current-light output characteristics and spectrum of a DBR tapered laser
- High-precision assembly of semiconductor components and optics on a micro-optical bench
- Hybrid master-oscillator power-amplifier (MOPA) on a micro-optical bench [paper]
- Pulsed laser sources with Pmax > 20 W [paper]
- DBR RW with 1.4 MHz linewith [paper]
- SHG concepts
- SHG bulk
- SHG bulk 1d/2d waveguide
- gradient heater
- Concept and realization of laser systems in the visible spectral range
- Study of the influence of the beam quality on the conversion efficiency [paper]
- More than 1.5 W optical output power at 488 nm in a laboratory experiment
- 1 W at 490 nm from a micro module [paper]
- Diode laser module with built-in frequency conversion for emission in the visible spectral range; right: time transients of the optical output power and peak position of the spectrum.
- 100 mW at 633 nm from a micro module [paper]
- 0.7 W @ 640 nm with beam shaping [Optik & Photonik in german]
