Collaborative Research Center Sfb 787 „Semiconductor NanoPhotonics“
At the beginning of 2008 a new Collaborative Research Center (Sonderforschungsbereich) 787 „Semiconductor NanoPhotonics: Materials, Models, Devices“ together with an “Integrated Postgraduate School” has been launched. For the initial phase (2008-2011) the German Research Foundation (DFG) funded the network with about € 11 million, with a planned duration of twelve years and an expected total funding of € 35 million. In the end of 2011, DFG granted a budget of 11.3 Mio. € for the next four years. The Collaborative Research Center Sfb 787 will support more than 100 scientists from Berlin and Magdeburg, who will study novel photonic devices, nanomaterials and mathematical models in the field of nanophotonics.
2011 two projects were successfully completed. Within project A1 FBH realized highly efficient InGaN nanomaterials and demonstrated high power GaN-based laser diodes in the blue and green spectral range. Project C5 explored semiconductor laser structures that enable extremely small beam divergence (< 7°) and new approaches for wavelength stabilization.
The Ferdinand-Braun-Institut considerably contributes to the Sfb 787 within two projects:
Within project C6 mode-locked laser diodes in the wavelength range of 1.0 - 1.3 µm will be explored. The work aims at two applications requiring different device layout. The first is high bit rate telecommuncation at and beyond 100 Gbit/s. Recent research on laser diodes and saturable absorbers based on quantum dots, provides foundation for studies of multi-section laser diodes with mode-locking and corresponding D(Q)PSK transmission experiments. The know-how on mode-locking will be combined with high brightness and high transverse fundamental mode output power obtained with Photonic Band Gap Lasers (PBCLs) to realize mode-locked laser with short pulses and very high peak output power for direct application in materials processing – the second targeted application.
In the new project C9 AlGaN-based laser diodes in the far ultraviolet spectral region will be realized. This goal will be achieved in three steps: the realization of optically pumped (In)AlGaN lasers in the UV-C wavelength range, investigation of the electroluminescence and optical gain in (In)AlGaN MQW laser heterostructures, and the demonstration of injection laser diodes in wavelengths < 280 nm. The project is an important building block for the activities in the Business Area GaN optoelectronics at the FBH, which are co-developed together with the TU Berlin.
Partners:
- Technische Universität Berlin
- Humboldt-Universität zu Berlin
- Otto-von-Guericke-Universität Magdeburg
- Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
- Fraunhofer-Institut für Nachrichtentechnik Heinrich-Hertz-Institut
- Weierstraß-Institut für Angewandte Analysis und Stochastik
- Konrad-Zuse-Zentrums für Informationstechnik