Lithography up to sub-µm

Basic parameters

• Electron beam lithography
  Vistec SB251: 50 kV, max. 20 A/cm², resolution ≤ 50 nm (isolated line in resist), wafer up to 200 mm
• Projection lithography
  Wafer stepper Nikon Body 10: i-line (wave length 365 nm), resolution up to 0.45 μm
• Contact lithography
  Mask aligner Süss MA 100M & EVG 420: resolution up to 1.0 μm
• Utility layer-free structuring with a shadow mask at low structure size requirements

Procedures

• Structuring of photonic crystals
  • Flexible substrate wafer sizes from 4" to pieces
  • Exposure with electron beam or wafer stepper or as a combination of both processes
  • Embedding of lithography service in a process line with the option of combining the service with plasma etchimg
    
    
• Structuring of gates for microwave transistors
  • Electron beam gate processes based on GaAs and GaN available, GaN T-gate 0.4 µm, GaN embedded gate 0.25 µm
  • Optical gate lithography up to 0.5 µm gate length
  • Integration in a III-V process line, short wafer return times by order processing in a two-shift system
  • Certification of the process line according to ISO 9001, 14001, and 18001
    
    
• Resist structuring for semiconductor processes
  • High reproducibility by coating and development process on process robots
  • Process standards for coating thicknesses of 0.5 μm to 50 μm, exposure with i-line and broadband, positive, negative and reverse coatings available, FS-BS adjustment possible
  • Free choice of substrate wafer size from cuts up to 4'' wafers
  • Process experience also with more materials such as ZnO, LiAlO₂ etc.
    
    
• Utility layer-free structuring of e.g. metal structures
  • Realization of shadow masks by laser micro structuring directly from the CAD data
  • Sharp figure by avoiding masks deformations caused by mechanical machining and heat input during production
  • All-in-one solution including evaporation or shadow-mask manufacturing supplied as service