Lithography up to sub-µm

Basic parameters

• Electron beam lithography, Electron Beam Vistec ZBA 23 20/40 KV, resolution up to 0.25 μm
• Projection lithography, wafer stepper Nikon Body 10 i-line (Wave length 365 nm), resolution up to 0.5 μm
• Contact lithography, mask aligner Süss MA 100M & EDC 420, resolution up to 1.0 μm
• Utility layer-free structuring with a shadow mask at low structure size requirements

Procedures

• Structuring of photonic crystals
  • Flexible substrate wafer sizes from 4" to pieces
  • Exposure with electron beam or wafer stepper or as a combination of both processes
  • Embedding of lithography service in a process line with the option of combining the service with plasma etchimg
    
    
• Structuring of gates for microwave transistors
  • Electron beam gate processes based on GaAs and GaN available, GaN T-gate 0.4 µm, GaN embedded gate 0.35 µm
  • Optical gate lithography up to 0.5 µm gate length
  • Integration in a III-V process line, short wafer return times by order processing in a two-shift system
  • Certification of the process line according to ISO 9001 (quality), 14001 (environmental), and 18001 (occupational safety)
    
    
• Resist structuring for semiconductor processes
  • High reproducibility by coating and development process on process robots
  • Process standards for coating thicknesses of 0.5 μm to 50 μm, exposure with i-line and broadband, positive, negative and reverse coatings available, FS-BS adjustment possible
  • Free choice of substrate wafer size from cuts up to 4'' wafers
  • Process experience also with more materials such as ZnO, LiAlO₂ etc.
    
    
• Utility layer-free structuring of e.g. metal structures
  • Realization of shadow masks by laser micro structuring directly from the CAD data
  • Sharp figure by avoiding masks deformations caused by mechanical machining and heat input during production
  • All-in-one solution including evaporation or shadow-mask manufacturing supplied as service