Microwave Components

Process modules available at the FBH, combined with dedicated staff and equipment, offer an ideal environment for cooperations in the development of customized microwave semiconductor components. The possibilities range from specific device developments to pilot series fabrication.

The portfolio comprises:

• GaAs power transistors (HBTs) and MMICs with 70 V breakdown voltage for the frequency range up to 2 GHz and output powers of 10+ W
• GaN-HEMTs on SiC substrate (discretes and MMICs) for microwave power applications up to X-band
• High-speed GaAs Schottky diodes for high power levels (1.5 A maximum current, 50 V reverse voltage, 300 ps recovery time)