Semiconductor Lasers in STED Nanoscopy

Dr. Matthias Henrich
Deutsches Krebsforschungszentrum (DKFZ), Heidelberg

FBH seminar: 17.04.2014

SPIE Sensing Technology and Applications

The FBH presents recent research at the conference

Conference:20.-24.04.2015, Baltimore (US)

Klein aber oho

As information is usually given in German language, please switch to the German website.

Girls'Day at FBH: 23.04.2015

Laser Display Conference 2015

FBH presents recent research at the Laser Display Conference.

Conference: 22.-24.04.2015, Yokhama (Japan)

Stabilization of passively mode-locked quantum dot lasers

Dr. Stefan Breuer
Technische Universität Darmstadt

FBH seminar: 24.04.2015

"MINT anders" – Innovation und Experimente im Bildungssystem

Das FBH ist auf dem 8. MINT-Tag im Bundesministerium für Wirtschaft und Energie vertreten.

Conference: 30.04.2015, Berlin (in German)

CLEO 2015 - Laser Science to Photonic Applications

 Meet FBH scientists at the Conference on lasers and electro-optics.

Konferenz: 10.-15.05.2015, San Jose (USA)

ISPSD 2015

At the International Symposium on Power Semiconductor Devices and ICs presents the FBH a lecture

Conference:10.-14.05.2015, Hong Kong

CS Mantech

FBH presents research results at the International Conference on Compound Semiconductor Manufacturing Technology

Conference:18.-21.05.2015, Arizona (US)

IMS 2015

FBH at the International Microwave Symposium



Conference: 17.-22.05.2015, Phoenix (US)

FBH at Laser World of Photonics and CLEO Europe

Visit us at the joint booth Berlin-Brandenburg in hall B3, booth 359 and at the accompanying conference.

Trade fair and conference: 21.-25.06.2015, Munic

... translating ideas into innovation

Welcome to the Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik!

hybrid-integrated diode laser modules for display technology

We research cutting-edge technologies in the fields of microwave technology and optoelectronics. For customers in industry and science we provide high-frequency devices and circuits for communication and sensor technology as well as high-power diode lasers for materials processing, laser technology, medical technology and high precision metrology.

As a competence center for III/V-compound semiconductors we operate industry-compatible and flexible clean room laboratories with 2"-4" gas phase epitaxy units and a 2"-4" process line.


HiPoSwitch project completed with development of fast, efficient normally-off GaN-on-Si power transistors

Lasting from September 2011 to end-August 2014 with a budget of €5.57m (including €3.58m of funding from the European Union), the recently completed three-year project HiPoSwitch ('High Power Switch') has developed prototype fast, high-efficiency power switches using gallium nitride (GaN) operating in enhancement-mode.

Source: Semiconductor Today, 15.04.2015

EU-Projekt HiPoSwitch für GaN-Komponenten

Im Rahmen des EU-Verbundprojektes HiPoSwitch wurden effiziente und schnelle Galliumnitrid-Leistungsschalter entwickelt. Sie sind die Basis für energiesparende, kompakte und leichte Leistungskonverter.

Source: Channel-E, 15.04.2015 (in German)

Fast, efficient switching – thanks to HiPoSwitch

Power converters use power transistor switches as key components to accomplish power conversion. Lightning-fast semiconductor switches able to operate these kinds of converters more efficiently have now been developed in the recently completed EU group project called HiPoSwitch. 

Source:, 15.04.2015

Fast, efficient switching – thanks to HiPoSwitch

HiPoSwitch, an EU group-project, has successfully developed lightning-fast, high-efficiency gallium nitride power switches. These are essential for producing energy-efficient, compact, and light-weight power converters that make electrical energy more useable. The market potential is enormous, since these converters are found in nearly every electronic device.

Press release: 15.04.2015

Demonstration of GaN-based near UV laser diodes

The Fedinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) has developed low-threshold gallium nitride (GaN) based edge-emitting laser diodes (LDs) emitting in the near ultraviolet spectral range.

Source: Laser Technik Journal, April 2015

Adlershof: Die kleine Stadt der Super-Hirne

Adlershof ist Berlins Hightech-Standort. Hier arbeiten 16000 hochqualifizierte Menschen. B.Z. stellt sechs Produkte zum Staunen vor.

Source: B.Z. 02.04.2015 (in German)

Jetzt wird aus Adlershof Silicon Valley

Die Pampa, wie Adlershof in den 90er-Jahren noch spöttisch genannt wurde, boomt. Inzwischen arbeiten rund 16 000 Menschen an Berlins Hightech-Standort...

Source: Bild 02.04.2015 (in German)

Thermal characterization of AlGaN/GaN HEMTs on Si and n-SiC substrates

Channel temperature characterization of AlGaN/GaN devices is an important feature for reliability estimation and assessment of power switching losses. We present here a method to thermally characterize large AlGaN/GaN HFETs based on pulsed electrical measurements, performed in cooperation with TU Berlin. The results have then been correlated to ANSYS simulations.

FBH research: 02.04.2015

Top score - FBH positively evaluated and recommended for further funding

After the positive evaluation process, the Senate of the Leibniz Association recommended the Ferdinand-Braun-Institut for further joint funding by the federal and state authorities.

FBH news: 24.03.2015

New in-situ analysis options for plasma etch processes at FBH

Dry chemical etching by means of highly reactive plasmas is one of the most important structuring methods in semiconductor industry. Within a cooperation of FBH and the company Laytec the impact of process parameters on the wafer bow could be analyzed for the first time directly in a plasma etching chamber using a modified curvature sensor. As a result, the etch parameters have been optimized in such a way that the bow caused by the process could be minimized, the process time decreased, and the yield increased.

FBH research: 19.03.2015

Building brighter, more powerful lasers diodes

Conference Report Photonics West: Laser diodes can be brighter when they feature an architecture that trims the number of lateral modes.

Source: Compound Semiconductor, March 2015, p. 30 ff.