Workshop on Organometallic Vapor Phase Epitaxy

FBH presents recent research at the OMVPE

Conference: 02.-07.08.2015, Montana (US)

International Conference on Nitride Semiconductors

FBH presents several lectures and 2 poster at the ICNS.

Conference: 230.08.-04.09.2015, Beijing (China)

International Conference on Laser Ablation

FBH presents at the conference recent research results

Conference:31.08.-04.09.2015, Cairns (Australia)

European Microwave Week 2015

FBH contributions to the European Microwave Week.

Conference: 06.-11.09.2015, Paris (France)

European Solid-State Device Conference

FBH presents a tutorial at the ESSDERC 2015 conference

Conference: 14.-18.09.2015, Graz (Austria)

Seminars: semester break

Usally, during semester break no seminars are offered at FBH. As of October, lectures will restart and will be announced here.

until October

micro photonics - preview event

2016 the micro photonics is launched. Save the date for the preview event in November.

Conference: 26.-27.11.2015, Berlin

... translating ideas into innovation

Welcome to the Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik!

hybrid-integrated diode laser modules for display technology

We research cutting-edge technologies in the fields of microwave technology and optoelectronics. For customers in industry and science we provide high-frequency devices and circuits for communication and sensor technology as well as high-power diode lasers for materials processing, laser technology, medical technology and high precision metrology.

As a competence center for III/V-compound semiconductors we operate industry-compatible and flexible clean room laboratories with 2"-4" gas phase epitaxy units and a 2"-4" process line.


Towards Ka-band: 20 GHz large-signal performance of 150 nm gate GaN HEMTs

Ka-band GaN MMICs are gaining considerable interest for high data rate satellite links. In frame of the European FP7 project GaNSAT FBH develops K- and Ka-band MMICs for powering beam steering satellite transceivers. The recently introduced novel gate process modules at FBH towards Ka-band GaN MMIC fabrication have now been combined with epitaxial structures well-adjusted to short gate lengths of 100 nm or 150 nm. They result in an improved electron confinement to the channel and high output power density.

Patterning of 100 mm sapphire substrates for fabrication of semi-polar (11-22) GaN templates

The FBH has recently developed a novel method - combining photolithographic and plasma etching processes - to fabricate defect-reduced GaN on 100 mm diameter r-plane patterned sapphire with semi-polar (11-22) orientation. Such semi-polar GaN orientation can be utilized for the production of efficient light-emitting optoelectronic devices.

FBH research: 07.07.2015

Red-emitting master-oscillator power-amplifier for holographic applications

Holography requires lasers with a coherent beam at wavelengths visible to the human eye. Until now, small-sized semiconductor lasers lacked the required linewidths and output power. However, the FBH recently demonstrated the successful amplification of the radiation of a DBR-RWL to optical output powers beyond 500 mW while maintaining the high coherence.

FBH research: 01.07.2015

Laser für schnelles Internet im All

Laser Communication Terminal LCT sorgt bei der zweiten Sentinel-Mission für eine schnelle Datenverbindung.

Source: Optik & Photonik, 30.06.2015 (in German)