Dates

International Workshop on Nitride Semiconductors

FBH contributes with several lectures and posters to the IWN 2014.



Conference: 24.-29.08.2014 Wrocław (Poland))


h-BN growth and a new approach for 2D h-BN characterization

Boris Feigelson
Naval Research Laboratory, USA



FBH seminar: 29.08.2014


Wide Bandgap Semiconductor and Components Workshop

FBH at the 7th Wide Bandgap Semiconductor and Components Workshop



Conference:11.-12.09.2014 Frascati (Italy)


... translating ideas into innovation

Welcome to the Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik!

hybrid-integrated diode laser modules for display technology

We research cutting-edge technologies in the fields of microwave technology and optoelectronics. For customers in industry and science we provide high-frequency devices and circuits for communication and sensor technology as well as high-power diode lasers for materials processing, laser technology, medical technology and high precision metrology.

As a competence center for III/V-compound semiconductors we operate industry-compatible and flexible clean room laboratories with 2"-4" gas phase epitaxy units and a 2"-4" process line.

News

75 mOhm / 600 V normally-off switching transistors on SiC and Si substrates

GaN-based high-voltage power switching transistors enable efficient power converters with increased power density. The FBH has now successfully transferred its 600 V technology for normally-off power switching transistors from the GaN-on-SiC platform to 4" GaN-on-Si wafers - an essential precondition for competitive manufacturing costs. DC measurements demonstrated comparable characteristic values.



FBH research: 14.08.2014


UV laser scribing for die separation of GaN-based lasers

At FBH nanosecond-pulsed laser radiation (pulse length < 30 ns) with a wavelength of 355 nm is successfully used to scribe the material followed by cleaving. At 355 nm GaN absorbs, decomposes and ablates which allows for efficient laser micromachining. Processing parameters, such as pulse energy, pulse repetition frequency (PRF), and scan velocity were optimized to avoid damage to the laser active region and obtain best device performance.



FBH research: 28.07.2014