Dates
Conference: 28.10.-2.11.2012, Amsterdam NL
Europe’s Premier Microwave, RF, Wireless and Radar Event
FBH presents recent research results in the following lectures:
- Envelope delta-sigma-modulated voltage-mode class-S PA
- Tunable RF GaN-Power Transistor Implementing Impedance Matching Networks Based on BST Thick Films
- Noise Modeling of GaN HEMT Devices
- Current Status of Discrete Tunable RF-Power GaN-BST Transistors
- Multifinger InP HBTs in Transferred-Substrate Technology for 100 GHz Power Amplifiers
Konferenz: 18.-19.10.2012 Lichtenwalde
Interdisziplinäre Konferenz über Herstellung und Anwendung von Sensorsystemen.
Vortrag: „Diodenlaser für sensorische Anwendungen – Anforderungen, Herstellung und Möglichkeiten”
Conference: 7.-10.10.2012, Sapporo JP
Conference: 12.-14.09.2012, Lake Tahoe, CA
The workshop is devoted to the development of High Energy Class Diode Pumped Solid State Lasers worldwide.
Invited lecture: "Cryolaser: Innovative cryogenic diode laser bars optimized for emerging ultra-high power laser applications”
Conference: 16.-21.09.2012, Manchester UK
Conference on light and electron microscopy and spectroscopy across both the life and physical sciences, along with scanning probe and flow cytometry techniques.
Conference: 15.-20.09.2012, St. Petersburg RUS
11th Biennial Conference on High Resolution X-Ray Diffraction and Imaging
Microsystems Summer School: 27.-31.8.2012, Berlin
As information is usually given in German language, please switch to the German website
Conference: 22.-27.07.2012, Berlin
SSLED covers the entire spectrum of GaN-, ZnSe-, and ZnO- based semiconductors and their optoelectronic properties and applications. Michael Kneissl is member of the program committee and Session Chair
Conference: 21.-22.7.2012, Berlin
Japanese-German Center Berlin
Lecture: Optical polarization characteristics of (In)(Al)GaN quantum well UV light emitters
Conference: 16.-19.07.2012, St. Petersburg RUS
Visit us at the biannual series focusing on growth of III-Nitride materials, nanostructures and device structures
Conference website…
Conference: 9.-11.07.2012, Seattle Washington USA
This year’s IEEE summer school High-Power Semiconductor Laser takes place with distinct involvement of FBH scientists. Paul Crump is Co-chair of the conference, Götz Erbert key-note speaker and Christoph Schultz and Paul Crump hold invited lectures.
Conference website…
Conference: 20.-22.06.2012, Pennsylvania USA
Annual forum on preparation and characterization of electronic materials
Symposium: 17.-22.6.2012 Montreal, Kanada
Recent research results at the International Microwave Symposium. Wolfgang Heinrich is co-organizer of workshop WSC "3-D Integrated Circuits".
Lectures:
- 8 W GaN-based H-bridge class-D PA for the 900 MHz band enabling ternary coding
- The class-S voltage-mode concept: State-of-the-art results and efficiency analysis
Konferenz: 15.06.2012, Berlin (in German)
1. Handlungsfeldkonferenz Optische Kommunikationstechnik - eine Veranstaltung des Cluster Optik Berlin-Brandenburg am Fraunhofer Institut für Nachrichtentechnik, Heinrich-Hertz-Institut,
Begrüßung und Eröffnung: Prof. Dr. Günther Tränkle, Clustersprecher, Ferdinand-Braun-Institut
Vortrag: Kompakte, maßgeschneiderte ns-Lichtimpulsquellen im Butterfly-Gehäuse
mit integrierter Ansteuerelektronik
Ort: THESEUS – Innovationszentrum, Salzufer 6, 10587 Berlin
Conference: 30.05.-01.06.2012, Porquerolles France
FBH attends the EXMATEC conference on material fabrication, characterization and processing of compound semiconductors.
Conference website…
Conference: 20.-25.05.2012, Busan Korea
FBH presents 3 lectures at the International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE).
Conference website…
Trade fair & conference: 25.-27.4.2012, Yokohama Japan
FBH presents recent research on diode lasers for display technology at the Laser Display Conference and the corresponding trade fair:
- High-brightness red-emitting diode laser modules for display applications
- Diode laser based watt class SHG modules
Konferenz: 25.-30.03.2012, Berlin
Die Deutsche Physikalische Gesellschaft trifft sich in Berlin, Tagungsort ist die Technische Universität Berlin. Die Session „AlGaN Materials for UV Emitters“ am 28. März wird vom FBH, IKZ und TU Berlin organisiert. Das vollständige Programm finden sie hier.
Conference: 12.-14.03.2012 Ilmenau
FBH scientists present new research results at the German Microwave Conference – the national and international forum for microwave scientists and engineers.
The following lectures will be held:
- A 900 MHz Voltage-Mode Class-S Power Amplifier
- W-Band Amplifier with 8 dB Gain Based on InP- HBT Transferred Substrate Technology
- On Parasitic Coupling in CPW Structures
- A Modular Hybrid Switching Amplifier for Wide-Bandwidth Supply-Modulated RF Power Amplifiers
- A Low Voltage 24 GHz VCO in 130 nm CMOS For Localisation Purposes in Sensor Networks
- A High-Gain X-Band GaN-MMIC Power Amplifier
- An Analysis of Source Connections in GaN Power Transistor Packages
- Software Optimization of a Supply Modulated GaNAmplifier for Baseband Access ET Systems
Trade fair & conference: 19.-21.03.2011 Berlin
Three events of the laser optics branch take place at the Berlin exhibition center: Laser Optics Berlin, microsys-conference and the OSA Optics and Photonics Congress. The conferences and trade fair focus on shared applications of optical technologies and micosystems technology.
The FBH exhibits in hall 12, booth 507 and shows
- laser modules for applications in space
- ps and ns Lightsources
- hybrid lasersystems for display technology
- LEDs based on gallium nitride
ZEMI and Berlin WideBaSe share at a joint booth at the microsys-exhibition.
For more information please check the website of Laser Optics Berlin.
Conference: 21.-26.01.2012, San Francisco (USA)
At the world-wide leading fair for Optics and Photonics, the Ferdinand-Braun-Institut presents its research results in various lectures and posters. For further details and the conference program please visit the SPIE website.
FBH's Contributions
- All-semiconductor based, narrow linewidth, high power laser system for laser communication applications in space at 1060 nm
- Red-emitting diode lasers with internal surface DBR gratings
- 10 W reliable 100 µm wide broad area lasers with internal grating
- Progress in increasing the maximum achievable output power of broad area diode lasers
- High luminance tapered diode lasers for flying-spot display applications
- Compact sources for the generation of high-peak power wavelength-stabilized laser pulses in the picoseconds and nanoseconds ranges
- Generation of picosecond pulses and optical frequency combs with multi-section 1065 nm ridge waveguide diode lasers
- Continuously current-tunable narrow line-width miniaturized external cavity diode laser at 633 nm
- 100,000 h estimated lifetime of 100-um-stripe width 650 nm broad area lasers at an output power of 1.2 W
- Micro-integrated, high power, narrow linewidth diode lasers for precision quantum optics experiments in space (Poster)
