Research
FBH research: 16.07.2010
- New e-beam SB251 at FBH
- 150 nm T-gate generated with direct write e-beam technology
In June 2010, the new Vistec SB251 electron beam lithography system (e-beam) passed all FBH specific acceptance tests in due time. The shaped beam system allows direct write applications with a minimum feature size of down to <50 nm on up to 8 inch wafers. It provides the technological basis for further development of state-of-the-art devices.
Specific tests demonstrated the capability of the system for gate technologies of high-power transistors and for grating technologies of opto-electronical devices. Based on FBH’s technology 50 nm wide metal lines were generated by metal lift-off and T-gates with a foot width of 150 nm were demonstrated. Gratings with 70 nm line width (lines and spaces) were processed using one of FBH’s standard resist process.
Before moving in the e-beam system, very demanding installation requirements concerning temperature stability, magnetic disturbances, and mechanical vibrations had to be ensured. For preparing these superior environmental conditions, substantial reconstruction took place in fall 2009, including a complete shut-down of the cleanroom to build a new foundation and to modernize the air-conditioning system. Early in December 2009, the e-beam was moved into the cleanroom. After passing all standard acceptance tests in April 2010, the SB251 has been used for photomask writing.
FBH research: 24.06.2010
- Atmospheric plasma source in operation
- Interior view of the plasma source
Plasmas at atmospheric pressure open up new applications in medical and industrial fields and are presently the subject of various research activities. At FBH, a new microwave plasma source for operation at atmospheric pressure was developed together with Aurion Anlagentechnik. The source contains an integrated microwave oscillator, based on a GaN power transistor fabricated at FBH. The integrated concept allows cost-efficient manufacturing, furthermore a safe operation without high voltages is possible.
This is presently the only plasma source worldwide which uses a GaN transistor for power generation. The supply voltage is only 24 V and the oscillator delivers a power of approximately 10 W to the plasma. Inside the source, the microplasma achieves a temperature of more than 1200°C which is significantly higher than for example at barrier discharges and enables interesting plasma chemical applications. Nevertheless, the temperature at the treatment location outside the source is lower than 60°C.
Key to success was the development of new microwave measurement methods to characterize the nonlinear and dynamic impedance behavior of the plasma load. This allowed an efficient circuit design of the power oscillator.
Subsequent to the optimization of several prototypes, a first pilot series has been manufactured. After assembly and electrical set up at FBH, the process performance of the sources was analyzed quantitatively by Aurion. High activation capabilities and good reproducibility within the different samples were found. Presently, samples are provided to customers for tests and development of applications.