Dates 2017

conference: 24.-28.07.2017, Strasbourg (France)


FBH presents at the International Conference on Nitride Semiconductors an invited lecture: Review of vertical GaN-based FETs
conference website

Trade fair and conference: 26.-29.06.2017, Munic

Laser World of Photonics and CLEO Europe 2017

Visit us at the  Laser World of Photonics . You find us at the  Berlin Brandenburg joint booth in hall B2, booth 350.

At the accompanying conference  CLEO Europe, the FBH presents the following contributions:

  • Long-Resonator Laser-Diode Bars for Eff›cient kW Emission
  • Ultralow pulse-to-pulse timing jitter for telecommunication applications by a monolithic passively mode-locked multi quantum-well semiconductor laser emitting at 1080 nm
  • Portable SERDS system for the detection of carotenes in human skin
  • Self-optimizing passively, actively and hybridly mode-locked diode lasers (poster)
  • Development of a compact mode-locked ECDL for precision frequency comparison experiments at 780 nm (poster)
  • Comparison of passive mode-locked laser diodes with colliding and anticolliding designs containing a DQW with a broad gain spectrum (poster)
  • Miniaturized red-emitting hybrid semiconductor MOPA modules with small-sized Faraday isolators (poster)
  • Micro-integrated extended cavity diode laser with integrated optical amplifier for precision spectroscopy in space (poster)
  • Design and realization of a widely tunable sampled-grating distributed- Bragg režector (SG DBR) laser emitting at 976 nm (poster)
  • Inžfluence of lateral waveguide and grating layouts on the dišffraction efficiency of distributed Bragg reflžectors (poster)
  • Dual-wavelength Y-branch DBR-RW diode laser at 785 nm with an electrically tuneable wavelength distance up to 2 nm (poster)
  • Simulation and experiment results of high power DFB diode laser linewidth power product at 780 nm (poster)
  • Pico- and Nanosecond Dynamics of the Lateral Emission of Broad Area Distributed Bragg Režflector Lasers under High-Current Pulsed Excitation (poster)
  • Towards Compact Optical Quantum Technology For Space Environments

Conference: 04.-09.06.2017, Honolulu (Hawai)

International Microwave Symposium 2017

The FBH presents the workshop "Efficiency Enhancement and Linearization Techniques for Future Wireless Telecommunication Systems" at the conference.
Further conference contributions:

  • An Active Balanced Up- Converter Module in InP-on- BiCMOS Technology
  • A 2-W GaN-Based Three-Level Class-D Power Amplifier With Tunable Back-off Efficiency
  • Novel Digital Microwave PA With More Than 40% PAE Over 10 dB Power Back-Off Range
  • A 14 W Wideband Supply- Modulated System With Reverse Buck Converter and Floating-Ground RF Power Amplifier
  • Highly Efficient Class-G Supply-Modulated Amplifier With 75 MHz Modulation Bandwidth for 1.8–1.9 GHz LTE FDD Applications
  • GaN MMIC Active Arrays With Space Power Combination
  • Mutual Interference in Calibration Line Configurations
  • Digital Transmitters for the Wireless Infrastructure (within the workshop Digital-Intensive Wireless Transmitters for 4G/5G Broadband Mobile Communications)
  • A Drain Lag Model for GaN HEMT Based on Chalmers Model and Pulsed S-Parameter Measurements
  • Thick-Film MIM BST Varactors for GaN Power Amplifiers With Discrete Dynamic Load Modulation
  • A 14 W Wideband Supply- Modulated System With Reverse Buck Converter and Floating-Ground RF Power Amplifier


Conference: 22.-25.05.2017, California (US)


FBH lecture at the  CS Mantech: "Iridium Plug Technology for AlGaN/GaN HEMT Short-Gate Fabrication"

Conference and exhibition: 14.-18.05.2017, Berlin

Compound Semiconductor Week 2017

FBH presents the following lectures at the  Compound Semiconductor Week:

  • Understanding and controlling diameter widening during self-assisted growth of GaAs nanowires
  • Development of AlGaN-based Deep UV LEDs for Nitrogen Oxide Sensing
  • Separation of degradation effects in (AlGa)N-based UVB-LEDs
  • Comparing electron beam lithography and nanoimprint lithography for the selective-area growth of GaAs nanowires by molecular beam epitaxy
  • Integration of active, passive and buried-grating sections for a GaAs-based, widely tunable laser with sampled grating Bragg reflectors
  • Wavelength stabilized high pulse power laser diodes for automotive LIDAR
  • GaN based vertical n channel MISFETs for switching applications (poster)
  • Physical simulation of transferred substrate InP/InGaAs DHBT (poster)

Please visit us at the corresponding exhibition. 

Girls'Day at FBH: 27.04.2017

Klein aber oho

As information is usually given in German language, please switch to the German website.

Conference: 18.-21.04.2017 Yokohama (Japan)

Laser Display and Lighting Conference 2017

The FBH presents the following lectures at the conference:

  • Master Oscillator Power Amplifier Concepts with Nearly Diffraction-Limited Watt-Level Continuous Wave Emission at 635 nm for Laser Projection
  • Compact RGB laser sources (invited lecture)

Conference: 09.-13.04.2017 Oxford (UK)


Microscopy of Semiconducting Materials - the FBH presents the following lectures:

  • Correlation of structural, optical and lasing properties of 240 nm laser structures
  • Study of defect density and compositional homogeneity in AlN/AlGaN layers for application in UV emitters (invited lecture)

Conference: 03.-05.04.2017, Noordwijk (The Netherlands)

Workshop on microwave technology and techniques

FBH presents the following lectures:

  • MM-Wave MMIC components for space radar applications
  • Optimization of a buck-converter based envelope tracking system for space applications
  • A highly tunable package integrated 50 Ohm matched GaN transistor module with thin-film BST components

Conference: 19.-24.03.2017, Dresden


FBH presents current research at the conference.


  • Mode-locking dynamics and pulse train stability of monolithic two-section quantum-well semiconductor lasers emitting at 1070 nm with different lengths and gain-to-absorber section length ratios
  • Optoelectronic Characterization of AlGaN-based MSM-UV-Photodetectors
  • Beyond classical band offsets: Employing multiquantum barriers for electron blocking in group III-nitride devices
  • Enhanced light extraction and internal quantum efficiency for UVB LEDs with UV-transparent p-AlGaN superlattices
  • Influence of the GaN:Mg contact layer on the electro-optical properties of UVB LEDs
  • Surface-morphology transition between step-flow growth and step bunching
  • Superconducting ferecrystals: turbostratically disordered atomic-scale layered (PbSe)1.14(NbSe2)n heterostructures


  • Ohmic V-based contacts on n-Al0:8Ga0:2N for deep UV LEDs
  • Influence of p-AlGaN superlattice and quantum barrier composition on electro-optical characteristics of UVC-LEDs
  • Investigation of electrical conduction mechanisms in Si-doped GaN
  • Determination of threading dislocation density of AlN on sapphire substrates by X-ray diffraction
  • Light extraction in UVC LEDs grown on ELO AlN/sapphire templates
  • Optical feedback stabilization of a passively mode-locked multi quantum well semiconductor laser emitting at 1070 nm

Conference: 28.01.-02.02.2017, San Francisco (US)

Photonics West

The FBH presents several lectures at the world's largest multidisciplinary conference on photonics technologies:

  • In-situ shifted excitation Raman difference spectroscopy: development and demonstration of a portable sensor system at 785 nm
  • Compact single-mode diode laser in the visible spectral range
  • Assessment of factors regulating the thermal lens profile and lateral brightness in high power diode lasers (Invited Paper)
  • Compact diode laser module at 1116 nm with an integrated optical isolation and a PM-SMF output
  • Narrow linewidth diode laser modules for quantum optical sensor applications in the field and in space (Invited Paper)
  • kW-class diode laser bars
  • Progress in joule-class diode laser bars and high brightness modules for application in long-pulse pumping of solid state amplifiers
  • Miniaturized laser amplifier modules for wavelength of 1180 nm with pm-fiber input and optical output power > 1 W
  • Coherent beam combining architectures for high power tapered laser arrays
  • Non-uniform DFB-surface-etched gratings for enhanced performance high power, high brightness broad area lasers
  • 3.5 W of diffraction-limited green light at 515 nm from SHG of a single-frequency tapered diode laser
  • Picosecond pulsed micro-module emitting near 560 nm using a frequency doubled gain-switched DBR ridge waveguide semiconductor laser
  • 633 nm single-mode laser diode module with PM fiber output
  • AlGaN-based metal-semiconductor-metal photodetectors with high external quantum efficiency at low operating voltages (Invited Paper)
  • Improved light extraction and quantum efficiencies for UVB LEDs with UV-transparent p-AlGaN superlattices
  • Analysis of waveguide architectures of InGaN/GaN diode lasers by nearfield optical microscopy
  • 1030-nm diode-laser-based light source delivering pulses with nanojoule energies and picosecond duration adjustable by mode-locking or pulse-gating operation
  • 785-nm dual-wavelength Y-branch DBR-RW diode laser with electrically adjustable wavelength distance between 0 nm and 2 nm
  • Monolithic dual-wavelength diode lasers with sub-MHz narrowband emission at 785 nm
  • 1030-nm DBR-tapered diode lasers with up to 16 W of optical output power
  • In-situ metrology in multiwafer reactors during MOVPE of UV-LED structures (Invited Paper)
  • Operation-induced defect generation in deep-UV (In)AlGaN-based LEDs investigated by electrical and optical spectroscopy

Conference program