Dates 2018

Conferences & Exhibition: 02.02. - 07.02.2019, San Francisco (USA)

FBH at Photonics West 2019

FBH presents its research results at the world's leading technology event for optics and photonics and is also represented at at the German Pavilion at booth 4545 together with its spin-off  UVphotonics vertreten. The conference program and further information are provided on the conference website. FBH contributions at the accompanying conferences:



  • Session: Plasmonic Platforms and Optical Systems, Chair: Bernd Sumpf
  • Rapid and adjustable shifted excitation Raman difference spectroscopy at 785 nm
  • Session: Advanced Optical Sensing Systems, Chair: Martin Maiwald
  • Tailored diode lasers: enabling Raman spectroscopy in the presence of disturbing fluorescence and background light



  • High-power-class QCW red laser bars and stacks for pump and direct application
  • Advanced diode laser R&DCurrent spreading suppression by O- and Si-implantation in high power broad area diode lasers
  • Recent progress in brightness scaling by coherent beam combining of tapered amplifiers for efficient high power frequency doubling


  • Plenary Session, Günther Tränkle (presentation)
    High Power Laser Diodes: Improvements in Power, Efficiency, and Brilliance


  • Single mode 500 mW at 633 nm using all semiconductor master oscillator and a dual stage amplifier
  • Miniaturized watt-level laser modules emitting in the yellow-green spectral range for biophotonic applications
  • Ultra-narrow linewidth diode laser based on resonant optical feedback
  • Multi watt-level picosecond micro-laser sources in the yellow-green spectral range



  • The impact of crystal defects on the efficiency and lifetime of deep UV LEDs


  • Carrier transport analysis in III-nitride-based UV light-emitting diodes


  • Tunable Y-branch dual-wavelength diode lasers in the VIS and NIR range for sensor applications
  • Mode-locked diode lasers for THz asynchronous optical sampling


  • High-spectral radiance distributed Bragg reflector tapered diode lasers at 1060 nm with novel internal output DBR-grating
  • Reliability of high-power 1030 nm DBR tapered diode lasers with different lateral layouts
  • Investigation of controlled external feedback on the properties of low- and high-power frequency-stabilized diode laser
  • Impact of hydrogen migration on the operation-induced degradation of electro-optical parameters in (In)AlGaN-based UVB LEDs

Conference: 09.-12.12.2018 Kunming (China)

International workshop on UV materials and devices (IWUMD)

At the IWUMD the FBH presents two invited lectures:

  • AlN/sapphire templates for UV LEDs: Different approaches and their impact on device performance (invited)
  • The reliability of UVB and UVC LEDs: Current status and prospects (invited)
  • MOVPE grown AlGaN-based tunnel junctions enabling fully transparent UVC LEDs

 conference website

conference: 11.-16.11.2018 Kanazawa (Japan)

IWN 2018

The FBH presents current research at the International Workshop on Nitride Semiconductors. Conference contributions with FBH participation:

  •  Growth and characterization of C-doped GaN
  • Displacement Talbot Lithography for nano-engineering of III-nitride materials
  • Optimizing free carrier compensation in HVPE and MBE epitaxial GaN films
  • Degradation of AlGaN-based metal-semiconductor-metal photodetectors
  • Physical model for the microstructural evolution in epitaxial AlN on sapphire uponhigh-temperature annealing
  • Analysing extended defects in AlN and AlGaN quantum well structures grown on patterned sapphire substrates
  • Impact of intermediate high temperature annealing on the properties of MOVPE grown AlN / sapphire templates
  • Polarization fields in c-plane GaN /AlxGa1-x N/GaN quantum wells determined by capacitance-voltage-measurements
  • Investigation of the optical polarization of AlGaN multiple quantum wells using photoluminescence spectroscopy
  • Impact of temperature and current density on the degradation behavior of UVB LEDs
  • Spectrally and spatially resolved micro-electroluminescence investigation of degradation effects in UV-B LEDs
  • Temperature-dependent electroluminescence studies of AlGaN-based deep UV LEDs
  • High power UVB light emitting diodes with optimized n-contact layers
  • AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
  • Exploring the Wavelength Limits of AlGaN-Based Deep UV LEDs
  • Poster: UVB LED with narrow emission angle using advanced silicon-based reflector package and Fresnel lens
  • Poster: TCAD of AlGaN/GaN HFET load pull measurements
  • Poster: Collective behavior of injected excitons in GaN-based multi-quantum wells at threshold


OptecBB-Workshop at FBH: 20.11.2018 (please register)

Test & Measurement and THz Technologies

This THz workshop puts a focus on the electronic side, concentrating on the frequency range up to about 1THz and showcasing what state-of-the-art technologies in device design, fabrication and measurements can be achieved towards this end.

Trade fair: 13.-16.11.2018, Messe München


Visit us at the joint booth of »Research Fab Microelectronics Germany«  (FMD) in hall A3, booth 504.

We present a compact atmospheric plasma source that is suitable, for example, for the treatment of surfaces and for integration into production or process machines. On site, we will activate test surfaces to prepare them for printing or coating, for example. We will also present the demonstrator of a potential-free differential probe head for measuring high currents. With this measuring adapter for oscilloscopes, differential electrical signals in the frequency range from DC to over 1 GHz can be measured with galvanic isolation - even when superimposed by a high common-mode voltage.

Conference: 16.-19.09.2018 Santa Fe, USA

ISLC 2018

The 26. International Semiconductor Laser Conference is dedicated to latest developments in semiconductor lasers, amplifiers and LEDs. Paul Crump is program chair of the conference. Among the invited speakers are Andrea Knigge and Andreas Wicht (workshop).
Conference site

Workshop: 12. - 14.09.2018, Berlin

From Quantum to KOSMOS - Optical Quantum Technologies for Small Satellites

The 3-day KOSMOS Workshop "From Quantum to KOSMOS" includes talks and subsequent working groups on cutting-edge research in the field of optical quantum technology for space applications. It aims at addressing scientific and technical as well as strategic questions. Four main topics form the context of the workshop: Applications of OQT on small satellites, demonstration of OQT, technology development and OQT industry, and small satellite platforms.

Conference: 10.-15.06.2018, Pennsylvania (US)

FBH at IMS 2018

  FBH contributions at the  International Microwave Symposium:

  • Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs
  • Load tuning assisted discrete-level supply modulation using BST and GaN devices for highly efficient power amplifiers
  • Digital Sequential PA for Flexible Efficiency Tuning Over Wide Power Back-Off Range
  • An Active High Conversion Gain W-Band Up-Converting Mixer for Space Applications
  • Effects degrading accuracy of CPW mTRL calibration at W-band
  • Impact of Drain-Lag Induced Current Degradation for a Dynamically Operated GaN-HEMT Power Amplifier

09.06.2018, 5:00 pm - 12:00 am

Lange Nacht der Wissenschaften at FBH

Laboratory tours and hands-on experiments for all ages. As all information is usually given in German language, please switch to the German website.

Conference: 29.05.-01.06.2018, Boston (US)

Compound Semiconductor Week 2018

FBH contributions at the CSW

  • Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred-Substrate InP DHBT MMIC Technology
  • MOVPE Growth of AlN/GaN/AlN HFET Structures on 4H-SiC


International Conference: 22.- 25.04.2018, Berlin

International conference UV LEDs Technologies and Applications (ICULTA-2018)

is jointly organized by 'Advanced UV for Life', a German consortium led by Ferdinand-Braun-Institut, and the 'International Ultraviolet Association'. The FBH and its spin-off UVphotonics are represented with several (invited) talks and a booth at the accompanying exhibition.

contributons from FBH and UVphotonics

  • Improving the reliability of UV-B and UV-C LEDs - Sven Einfeldt, FBH (invited)
  • Compact UV laser systems - Bernd Sumpf, FBH (invited)
  • Prospects and challenges in the development of UV LED technology - Neysha Lobo Ploch, UVphotonics (invited)
  • Development of efficient and reliable UVB light emitting diodes for medical and material processing - Tim Kolbe, UVphotonics


Konferenz: 12.-14.03.2018, Freiburg

GeMiC 2018 - German Microwave Conference

The FBH presents the following lectures at the German Microwave Conference:

  • A 95 GHz Bandwidth 12 dBm Output Power Distributed Amplifier in InP-DHBT Technology for Optoelectronic Applications
  • Chalmers GaN HEMT Charge Model Revisited


Veranstaltung der Technologiestiftung Berlin und Inforadio (rbb); 24.01.2018, 12:30 - 13:30 Uhr

"Soup & Science" mit Dr. Katrin Paschke

Die Physikerin Dr. Katrin Paschke entwickelt mit ihrem Team am FBH kompakte, streichholzschachtelgroße Lasersysteme. Wozu die notwendig sind und was sie an ihrer Arbeit fasziniert, darüber erzählt sie im Gespräch mit Inforadio-Wissenschaftsredakteur Thomas Prinzler.
Im Anschluss an das Gespräch gibt es ein kleines Mittagessen und Gelegenheit sich auszutauschen.

Einlass ab 12 Uhr
Anmeldung bis 22.01. per Mail an event(at)

Technologiestiftung Berlin
Grunewaldstr. 61-62
10825 Berlin

Conferences & Exhibition: 27.01. - 01.02.2018, San Francisco (USA)

FBH at Photonics West 2018

FBH presents its research results at the world's leading conference for optics and photonics and is also represented on-site at the German Pavilion at booth 4529. The conference program and further information are provided on the conference website. FBH contributions at the accompanying conferences:



  • Shifted excitation Raman difference spectroscopy: from diode lasers to in situ applications (Invited Paper) [10509-2])
  • Session 4: Plasmonics, Sensing and Bioanalytical Applications, Chair: Martin Maiwald



  • Forward development of high power diode lasers [10514-8]
  • Extreme triple asymmetric (ETAS) epitaxial designs for increased efficiency at high powers in 9xx-nm diode lasers [10514-9]
  • 970-nm ridge waveguide diode laser bars for high power DWBC systems [10514-13]
  • Compact deep UV laser system at 222.5 nm by frequency doubling wavelength-stabilized emission of a micro-integrated high-power GaN diode laser module [10516-5]


  • Intensity noise properties of compact laser device based on miniaturized MOPA system for spectroscopic applications [10513-8]
  • Wavelength stabilized high pulse power laser diodes for automotive LIDAR [10514-25]
  • Coherent combining of high brightness tapered lasers in master oscillator power amplifier configuration [10514-28]
  • Distributed Bragg reflector tapered diode lasers emitting more than 10 W at 1154 nm [10514-32]


  • Spectrally stabilized high-power high-brightness DBR-tapered lasers in the VIS and NIR range [10518-44]


  • Progress in high duty cycle, highly efficient fiber coupled 940-nm pump modules for high-energy class solid state lasers [10513-43]



  • 633-nm single-mode master-oscillator power-amplifier module [10528-12]
  • 10th-order laterally coupled GaN-based DFB laser diodes with v-shaped surface gratings (Invited Paper) [10553-7]


  • Frequency locking of compact laser-diode modules at 633 nm [10539-6]
  • Pico- and nanosecond investigations of the lateral nearfield of broad area lasers under pulsed high-current excitation [10553-17]
  • Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm [10553-19]
  • Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser [10553-20]
  • Challenges and prospects for AlGaN-based deep UV LED technologies (Invited Paper) [10554-14]
  • Deep-UV LEDs emitting at 232 nm featuring low contact resistance V-based electrodes on n-Al0.9Ga0.1N [10554-17]


  • Impact of defect-generation and diffusion in deep-UV (In)AlGaN-based LEDs submitted to constant current stress [10554-35]
  • Thermocompression bonding for high-power-UV LEDs [10554-46]
  • Modeling of current spreading in high-power broad-area lasers and its impact on the lateral far-field divergence [10526-52]
  • Miniaturized semiconductor MOPA laser source at 772 nm for the generation of UV laser light (Poster) [10535-72]
  • Reflectors and tuning elements for widely-tunable GaAs-based sampled grating DBR lasers [10553-33]


  • From heterostructure design to package: development of efficient and reliable UVB LEDs (Invited Paper) [10532-70]
  • Electrical p-contacts for UV-LEDs: contact resistivity, reflectivity, and aging performance [10532-74]
  • Diffraction limited 1064 nm monolithic DBR-master oscillator power amplifier with more than 7 W output power [10553-45]
  • Comparison of distributed Bragg reflector ridge waveguide diode lasers and monolithic master oscillator power amplifiers [10553-46]
  • 5.5 nm wavelength-tunable high-power MOPA diode laser system at 971 nm [10553-48]
  • Comparison for 1030 nm DBR-tapered diode lasers with 10 W central lobe output power and different grating layouts for wavelength stabilization and lateral spatial mode filtering [10553-49]