Conference: 14.-18.11.2017, Fukuoka (Japan)

IWUMD

International workshop on UV materials and devices - the FBH contributes to the following lectures:

  • Crystal defects in MOVPE grown AlN on bulk AlN
  • Effect of Electron Blocking Layer Design and Mg-doping on the Performance of 310 nm Light Emitting Diodes
  • Status and Challenges of AlN Bulk Crystal Growth for Use as Substrates in Deep-UV Emitters
  • From step flow to quantum dots: Morphology of AlN, AlGaN and GaN on AlN and its effect on device properties
  • Impact of Electron Blocking Layer Design on the Degradation Behavior of UVB Light Emitting Diodes
  • Prospects and challenges for AlGaN-based deep UV LED technologies