For their publication "Local 2DEG Density Control in Heterostructures of Piezoelectric Materials and Its Application in GaN HEMT Fabrication Technology" an FBH team of authors was awarded with the renowned Paul Rappaport Award 2018 .
Highly efficient power semiconductors should create the conditions for a wide range of new applications from electromobility to artificial intelligence. This is the aim of the recently launched joint project "Power transistors based on AlN (ForMikro-LeitBAN)", which is coordinated by the Ferdinand-Braun-Institut for highest frequency technologies in Berlin.
Smart energy supply, electro-mobility, broadband communication systems and applications of artificial intelligence - the number of interacting and interconnected systems is constantly growing. At the same time, the responsible use of resources is a crucial social challenge.
Coordinated by the Ferdinand-Braun-Institut of Berlin, Germany, the recently launched joint project ‘power transistors based on AlN (ForMikro-LeitBAN)’ aims to develop highly efficient power semiconductors that can pave the way for a wide range of novel applications – from e-mobility to artificial intelligence.
Highly efficient power semiconductors are to pave the way for a wide range of novel applications – from e-mobility to artificial intelligence. This is the objective of the recently launched joint project "power transistors based on AlN (ForMikro-LeitBAN)" coordinated by the Ferdinand-Braun-Institut.
In the recently launched joint project ‘ForMikro-GoNext’ - funded by Germany’s Federal Ministry of Education and Research (BMBF) with about €2m over 4 years - the Leibniz-Institut für Kristallzüchtung (IKZ), the Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik (FBH), the University of Bremen and industrial partners ABB Power Grids Switzerland Ltd and Aixtron SE are investigating beta-gallium oxide (β-Ga2O3) using a new vertical device architectures to exploit its properties for transistors more effectively.
The recently launched joint project "ForMikro-GoNext" is studying the feasibility of developing commercial beta-gallium oxide (β-Ga2O3) power semiconductors.
Researchers have demonstrated beta-gallium oxide offers the potential to increase power converter efficiency.
The recently launched joint project "ForMikro-GoNext" studies beta-gallium oxide (β-Ga2O3) utilizing a new vertical device architecture.
Ferdinand-Braun-Institut is showing its space-compatible, ultra-narrow linewidth diode laser modules and systems along with further III-V components for satellite applications at Space Tech Expo Europe (STEE) in Bremen, November 19-21, 2019
The Ferdinand-Braun-Institut presents its space-compatible, ultra-narrow linewidth diode laser modules and systems along with further III-V components for satellite applications at "Space Tech Expo Europe" (STEE) in Bremen from November 19-21.
Researchers at the Ferdinand-Braun-Institut have developed space-compatible, ultra-narrow linewidth diode laser modules and systems along with further III-V components for satellite applications.
FBH's most important events and results achieved in 2018/19
Für sein herausragendes Engagement wird der Leiter des Forschungsbereichs III/V-Elektronik am Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik von der European Microwave Association (EuMA) ausgezeichnet
Making microwave research visible and connecting the players in research and industry - this has been Wolfgang Heinrich's driving force for many years. For his outstanding engagement, the head of the research area III-V electronics at the Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, has been awarded the Distinguished Service Award by the European Microwave Association (EuMA)
Das FBH bringt 5G das Stromsparen bei: Neuartige Leistungsverstärker und Spannungsversorgungen sollen helfen, den Stromverbrauch moderner Informations- und Kommunikationstechnologien wie 5G zu reduzieren.
The Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) of Berlin, Germany has developed gallium oxide (ß-Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs) that provide a high breakdown voltage combined with high current conductivity
Lösungen für die Digitalisierung in der mobilen Kommunikation, für industrielle und biomedizinische Systeme sowie für den Einsatz im Weltraum
Vier Tage lang beschäftigen sich Wissenschaftler mit Analyseverfahren zur Erkennung von Kristalldefekten auf der 18. internationalen DRIP-Konferenz in Berlin
In a joint booth (B2200) with ‘Research Fab Microelectronics Germany’ (FMD) at European Microwave Week (EuMW 2019) in Porte de Versailles Paris, France (1-3 October), Berlin-based Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) is presenting its portfolio of III-V-based electronics
Das FBH präsentiert auf der „European Microwave Week“ (EuMW) sein Leistungsspektrum in der III/V-Elektronik: Komponenten für die Digitalisierung in der mobilen Kommunikation, für industrielle und biomedizinische Systeme sowie für den Einsatz im Weltraum.
At European Microwave Week (Paris, September 29 to October 4, 2019), Ferdinand-Braun-Institut (FBH) will present its portfolio of III-V electronics for the digitisation of mobile communications, for industrial and biomedical systems as well as for use in space.
At the "European Microwave Week" (EuMW), FBH will present its portfolio in III-V electronics: components for the digitization of mobile communications, for industrial and biomedical systems as well as for use in space.
For four days, scientists discussed methods for analysis of crystal imperfections at the 18th International DRIP Conference in Berlin
Researchers from Germany’s Ferdinand-Braun-Institut (FBH) have made a breakthrough in their development of transistors based on gallium oxide (ß-Ga2O3), achieving high breakdown voltage combined with high current conductivity.
The Berlin-based Ferdinand-Braun-Institut has developed what the research organization says are gallium oxide power transistors with record values.
Leistungstransistor aus Galliumoxid wartet mit sehr hohen Durchbruchspannungen und niedrigen Widerständen auf.
(Nanowerk News) Powerful electronic components are indispensable for future communications, for the digital transformation of society and for artificial intelligence applications.
The Ferdinand-Braun-Institut (FBH) has achieved a breakthrough with transistors based on gallium oxide (beta-Ga2O3). The newly developed beta-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a high breakdown voltage combined with high current conductivity.
The Ferdinand-Braun-Institut (FBH) recently announced a breakthrough with transistors based on gallium oxide (ß-Ga2O3).
The Ferdinand Braun Institute has developed a lateral power transistor that achieves a power density of 155 MW/cm² at a breakdown voltage of 1.8 kV. The breakdown field strength reaches 1.8 MV/cm to 2.2 MV/cm.
Researchers at the Leibniz-Institut für Höchstfrequenztechnik (Berlin) have developed a novel type of MOSFETs based on gallium oxide (ß-Ga2O3), with breakthrough characteristics.
Das Ferdinand-Braun-Institut hat ß-Ga2O3-MOSFETs (Metall-Oxid-Halbleiter-Feldeffekttransistor) mit einer Durchbruchspannung von 1,8 kV und einer Leistung von 155 MW pro cm2 entwickelt. Die Kennzahlen sind nahe dem theoretischen Materiallimit von Galliumoxid.
The Ferdinand-Braun-Institut (FBH) has announced that it has achieved a breakthrough with transistors based on gallium oxide (ß-Ga2O3)
Engineers have now achieved a breakthrough with transistors based on gallium oxide (beta-Ga2O3). The newly developed beta-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a high breakdown voltage combined with high current conductivity.
Powerful electronic components are indispensable for future communications, for the digital transformation of society and for artificial intelligence applications.
Scientists at the Ferdinand-Braun-Institut (FBH) have achieved what they believe is a breakthrough for transistors based on the ultra wideband semiconductor gallium oxide. They published their results in IEEE Electron Device Letters.
On a footprint as small as possible, they should offer low energy consumption and achieve ever higher power densities, thus working more efficiently.
On a footprint as small as possible, power electronic components should offer low energy consumption and achieve ever higher power densities, thus working more efficiently. This is where conventional devices reach their limits.
Powerful electronic components are indispensable for future communications, for the digital transformation of society and for artificial intelligence applications. The Ferdinand-Braun-Institut has now achieved a breakthrough with transistors based on gallium oxide.
Transfer from science to industry was in the focus of the 3rd Brandenburg Optics Day in Frankfurt/Oder on 19.08.2019. Brandenburg's Minister of Economic Affairs Jörg Steinbach emphasized the importance of optical technologies for the region. Guests from research and industry exchanged their views on the results at the event organized by the Photonics Cluster.
Advanced UV for Life and the International Ultraviolet Association (IUVA) announce the second international conference on UV LED Technologies & Applications. It takes place from 26.-29.04.2020 at MELIÃ Hotel Berlin. The Call for Abstracts runs until 30.11.2019.
Mit weiteren neuen Hightech-Anlagen stattet Jenoptik seinen Standort in Berlin aus und rüstet sich damit für die geplante Kapazitätserweiterung von Halbleitermaterial für Hochleistungsdiodenlaser.
This year's LASER World of Photonics conference and exhibit set new attendance records; the mood was positive in spite of an economic slowdown.
June, 25, 2019, Berlin--Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik(FBH)は､ミュンヘンで開催されているフォトニクスのレーザワールド(Laser World of Photonics)で､現在開発中のチップとモジュール､デモンストレーションなど幅広い展示を行う｡
FBH's current frequent issue is available, dealing with compact atmospheric plasma sources that are developed by the FBH up to prototypes.
At the joint Berlin-Brandenburg stand (booth B2.119) at the Laser World of Photonics 2019 in Munich (24–27 June), Berlin-based Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) – together with spin-off UVphotonics – is presenting its latest developments in diode lasers and ultraviolet light-emitting diodes (UV LEDs), from chips and modules with and without fiber coupling to live demonstrators for LiDAR and Raman spectroscopy.
Here at Laser Focus World, we reached out to companies to learn ahead of time what photonics products and technologies they will demonstrating on the exhibit floor.
The Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) is showing its range of services at Laser World of Photonics in Munich from June 24-27, 2019. At the joint Berlin-Brandenburg stand, the institute will present current developments, from chips and modules with and without fibre coupling to live demonstrators.
To be demonstrated at Laser World of Photonics, the Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) has developed a stand-alone, PC-controlled pulsed laser source for LiDAR research, allowing the flexible adjustment of pulse duration and intensity.
At Laser World of Photonics, FBH will present its capabilities in diode lasers and UV LEDs. It introduces compact live demonstrators for LiDAR and Raman spectroscopy. Results and advances in UV LEDs will be exhibited by FBH together with the spin-off UVphotonics.
On 25.04.2019 Hildegard Bentele, spokesperson for educational policy of the CDU parliamentary group in the Berlin House of Representatives and CDU top candidate for the upcoming European elections, visited the FBH.
The new "Bildungsatlas" provides information on training opportunities and academic programs in the high-tech fields of optics and microsystems technology in Berlin and Brandenburg.
UVphotonics showcased its latest deep UV LED developments jointly with the Ferdinand-Braun-Institut (FBH).
Astronomers, weather forecasters, and Earth scientists are among those now benefiting from the application of solid-state lasers in space.
The LASE Plenary covered the whole spectrum, from Cassini's survey of Saturn, through reinforcing nuclear reactors and at-risk bridges, to powerful diode pulses.
It is rare that a politician is cited in a laser magazine. But last week, Chancellor Angela Merkel spoke about digital technologies for farming at the International Green Week, here in Berlin. Referring to precision farming, she said, "this technology enables us to look at each and every plant and to enter information on specific plants, thus reducing the need for fertilizers and making forecasts possible.
R&D at Berlin Adlershof has resulted in design improvements for high-power diode lasers that are boosting efficiency, peak power, brilliance, and range of emission spectra.
Die kompakten Lasermodule für den gelben Spektralbereich von 532 nm bis 590 nm bieten Ausgangsleistungen im Wattbereich.
FBH's current frequent issue is available, dealing with developments used for sensor and analytics applications, from novel dual-wavelength diode lasers to a SERDS Raman system.
UVphotonicsは､Photonics West2019で､UVBとUVC波長領域で発光するUV LEDを紹介する｡このLEDのアプリケーションに含まれるのは､センシング､光療法､植物育成照明｡
Firma UVphotonics , przy współpracy z Ferdinand-Braun-Institut opracowała swoje nowe diody LED emitujące światło ultrafioletowe na pasmach UVB oraz UVC.
Together with the Ferdinand-Braun-Institut, UVphotonics has developed UV LEDs emitting in the UVB and UVC wavelength regions for sensing, phototherapy and plant growth lighting.
Germany-based UV LED maker UVphotonics announced that it will showcase UV LED products jointly with The Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik (FBH) at Photonics West 2019.
Together with Berlin-based Ferdinand-Braun-Institut in the German Pavilion at Photonics West 2019 (5-7 February), UVphotonics NT GmbH – a spin-off from FBH and TU Berlin that makes LEDs emitting in the UVB and the UVC wavelength regions – is showcasing its latest UV LED developments.
UVphotonics launches UV LEDs emitting in the UVC and UVB wavelength regions at Photonics West 2019.
UVphotonics and the Ferdinand-Braun-Institut (FBH) will be jointly showcasing their latest UV LED developments at the upcoming Photonics West 2019 event.
UVphotonics will showcase latest UV LED developments jointly with the Ferdinand-Braun-Institut (FBH) at the German Pavilion at Photonics West 2019 in San Francisco (USA) from February 5-7, 2019.
At Photonics West 2019, UVphotonics will showcase its latest UV LED developments jointly with the Ferdinand-Braun-Institut (FBH) at the German Pavilion at Photonics West 2019, hosted in San Francisco (USA) from February 5-7, 2019.
At Photonics West 2019, UVphotonics introduces UV LEDs emitting in the UVB and UVC wavelength regions. Together with the FBH, the company covers the full UV LED technology chain, from epitaxy up to complete turn-key modules, ready to use in applications.
The performance of the UV LED improves by trimming its dislocation density, boosting light extraction and enhancing thermal management.
This year’s Tech Review Top 20 list contains a sampling of this past year's important
advances in photonics - no. 3 is an article on quantum sensing technologies reporting on FBH achievements in this field.
