In the News 2019

Source: Smart2Zero, 02.12.2019

Aluminium-based semiconductors promise even greater efficiency

Highly efficient power semiconductors should create the conditions for a wide range of new applications from electromobility to artificial intelligence. This is the aim of the recently launched joint project "Power transistors based on AlN (ForMikro-LeitBAN)", which is coordinated by the Ferdinand-Braun-Institut for highest frequency technologies in Berlin.

Source: Compound Semiconductor, 29.11.2019

High-performance Devices For The Digital Transformation

Smart energy supply, electro-mobility, broadband communication systems and applications of artificial intelligence - the number of interacting and interconnected systems is constantly growing. At the same time, the responsible use of resources is a crucial social challenge.

Source: Semiconductor Today, 29.11.2019

FBH-led project ‘power transistors based on AlN (ForMikro-LeitBAN)’ launched

Coordinated by the Ferdinand-Braun-Institut of Berlin, Germany, the recently launched joint project ‘power transistors based on AlN (ForMikro-LeitBAN)’ aims to develop highly efficient power semiconductors that can pave the way for a wide range of novel applications – from e-mobility to artificial intelligence.

Source: Semiconductor Today, 15.11.2019

Germany-funded ‘ForMikro-GoNext’ project investigating vertical gallium oxide devices for power electronics

In the recently launched joint project ‘ForMikro-GoNext’ - funded by Germany’s Federal Ministry of Education and Research (BMBF) with about €2m over 4 years - the Leibniz-Institut für Kristallzüchtung (IKZ), the Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik (FBH), the University of Bremen and industrial partners ABB Power Grids Switzerland Ltd and Aixtron SE are investigating beta-gallium oxide (β-Ga2O3) using a new vertical device architectures to exploit its properties for transistors more effectively.

Source: Compound Semiconductor, 21.10.2019

FBH Shows Laser Diodes At Space Tech Expo Europe

Ferdinand-Braun-Institut is showing its space-compatible, ultra-narrow linewidth diode laser modules and systems along with further III-V components for satellite applications at Space Tech Expo Europe (STEE) in Bremen, November 19-21, 2019

Source: Elektronikpraxis 27.09.2019 (in German)

Erste volldigitale Transmitterkette für 5G-Mobilfunk

Das FBH bringt 5G das Stromsparen bei: Neuartige Leistungsverstärker und Spannungsversorgungen sollen helfen, den Stromverbrauch moderner Informations- und Kommunikationstechnologien wie 5G zu reduzieren.

Source: Adlershof.de, 17.09.2019

Defekte im Fokus

Vier Tage lang beschäftigen sich Wissenschaftler mit Analyseverfahren zur Erkennung von Kristalldefekten auf der 18. internationalen DRIP-Konferenz in Berlin

Source: semiconductor-today.com, 17.09.2019

FBH presenting III-V electronics portfolio at European Microwave Week

In a joint booth (B2200) with ‘Research Fab Microelectronics Germany’ (FMD) at European Microwave Week (EuMW 2019) in Porte de Versailles Paris, France (1-3 October), Berlin-based Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) is presenting its portfolio of III-V-based electronics

Source: compoundsemiconductor.net, 17.09.2019

FBH To Exhibit III-V Portfolio At EuMW

At European Microwave Week (Paris, September 29 to October 4, 2019), Ferdinand-Braun-Institut (FBH) will present its portfolio of III-V electronics for the digitisation of mobile communications, for industrial and biomedical systems as well as for use in space.

Source: Electronics Online, 05.09.2019

Gallium oxide power transistors said to achieve record values

Researchers from Germany’s Ferdinand-Braun-Institut (FBH) have made a breakthrough in their development of transistors based on gallium oxide (ß-Ga2O3), achieving high breakdown voltage combined with high current conductivity.

Source: Prophysik.de, 02.09.2019 (in German)

Feldeffekttransistor mit Rekordwerten

Leistungstransistor aus Galliumoxid wartet mit sehr hohen Durchbruchspannungen und niedrigen Widerständen auf.

Source: www.greencarcongress.com 29.08.2019

FBH reports gallium oxide power transistors with record values

The Ferdinand-Braun-Institut (FBH) has achieved a breakthrough with transistors based on gallium oxide (beta-Ga2O3). The newly developed beta-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a high breakdown voltage combined with high current conductivity.

Source: www.elektroniknet.de 29.08.2019

Gallium-Oxide Power MOSFET Handles 155 MW/cm²

The Ferdinand Braun Institute has developed a lateral power transistor that achieves a power density of 155 MW/cm² at a breakdown voltage of 1.8 kV. The breakdown field strength reaches 1.8 MV/cm to 2.2 MV/cm.

Source: www.eenewseurope.com 27.08.2019

Gallium oxide power transistors achieve record values

Researchers at the Leibniz-Institut für Höchstfrequenztechnik (Berlin) have developed a novel type of MOSFETs based on gallium oxide (ß-Ga2O3), with breakthrough characteristics.

Source: all-electronics.de 29.08.2019 (in German)

Galliumoxid-Leistungstransistor mit Rekordwerten entwickelt

Das Ferdinand-Braun-Institut hat ß-Ga2O3-MOSFETs (Metall-Oxid-Halbleiter-Feldeffekttransistor) mit einer Durchbruchspannung von 1,8 kV und einer Leistung von 155 MW pro cm2 entwickelt. Die Kennzahlen sind nahe dem theoretischen Materiallimit von Galliumoxid.

Source: Compound Semiconductor, 27.08.2019

FBH Achieves Gallium Oxide Breakthrough

Scientists at the Ferdinand-Braun-Institut (FBH) have achieved what they believe is a breakthrough for transistors based on the ultra wideband semiconductor gallium oxide. They published their results in IEEE Electron Device Letters.

Source: Photonik, 14.08.2019 (in German)

Jenoptik investiert im Berliner Technologiepark Adlershof

Mit weiteren neuen Hightech-Anlagen stattet Jenoptik seinen Standort in Berlin aus und rüstet sich damit für die geplante Kapazitätserweiterung von Halbleitermaterial für Hochleistungsdiodenlaser.

Source: Laser Focus World Japan, 25.06.2019 (in Japanese)

FBH、LiDAR & SERDS向けシステムをデモ

June, 25, 2019, Berlin--Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik(FBH)は、ミュンヘンで開催されているフォトニクスのレーザワールド(Laser World of Photonics)で、現在開発中のチップとモジュール、デモンストレーションなど幅広い展示を行う。

Source: Semiconductor Today, 10.06.2019

FBH presenting custom diode lasers and UV LEDs and demonstrating systems for LiDAR & SERDS

At the joint Berlin-Brandenburg stand (booth B2.119) at the Laser World of Photonics 2019 in Munich (24–27 June), Berlin-based Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) – together with spin-off UVphotonics – is presenting its latest developments in diode lasers and ultraviolet light-emitting diodes (UV LEDs), from chips and modules with and without fiber coupling to live demonstrators for LiDAR and Raman spectroscopy.

Source: Compound Semiconductor, 28.05.2019

FBH To Show Latest Technology At Laser World Of Photonics

The Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) is showing its range of services at Laser World of Photonics in Munich from June 24-27, 2019. At the joint Berlin-Brandenburg stand, the institute will present current developments, from chips and modules with and without fibre coupling to live demonstrators.

Source: eeNews Europe, 28.05.2019

Custom pulsed laser source for LiDAR

To be demonstrated at Laser World of Photonics, the Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) has developed a stand-alone, PC-controlled pulsed laser source for LiDAR research, allowing the flexible adjustment of pulse duration and intensity.

Source: Photonics West Daily Show, 07.02.2019 (p. 4)

Planets, plasmas, pulses

The LASE Plenary covered the whole spectrum, from Cassini's survey of Saturn, through reinforcing nuclear reactors and at-risk bridges, to powerful diode pulses.

Source: Laser Focus World, 30.01.2019

Farming 4.0 and the photonics industry

It is rare that a politician is cited in a laser magazine. But last week, Chancellor Angela Merkel spoke about digital technologies for farming at the International Green Week, here in Berlin. Referring to precision farming, she said, "this technology enables us to look at each and every plant and to enter information on specific plants, thus reducing the need for fertilizers and making forecasts possible.

Source: Photonik, 23.01.2019 (in German)

Fasergekoppeltes Diodenlasermodul

Die kompakten Lasermodule für den gelben Spektralbereich von 532 nm bis 590 nm bieten Ausgangsleistungen im Wattbereich.

Source: Laser Focus World Japan, 18.01.2019 (in Japanese)

UVphotonicsとFBH、Photonics WestでUVBとUVC LEDを展示

UVphotonicsは、Photonics West2019で、UVBとUVC波長領域で発光するUV LEDを紹介する。このLEDのアプリケーションに含まれるのは、センシング、光療法、植物育成照明。

Source: Evertiq, 18.01.2019 (in Polish)

LED UV generujące światło od 320 do 230 nm

Firma UVphotonics , przy współpracy z Ferdinand-Braun-Institut opracowała swoje nowe diody LED emitujące światło ultrafioletowe na pasmach UVB oraz UVC.

Source: Compound Semiconductor, 10.01.2019

UVPhotonics And FBH Exhibit Jointly Developed UV LEDs

At Photonics West 2019, UVphotonics will showcase its latest UV LED developments jointly with the Ferdinand-Braun-Institut (FBH) at the German Pavilion at Photonics West 2019, hosted in San Francisco (USA) from February 5-7, 2019.

Source: Compound Semiconductor, Nov./Dec. 2019

Developing efficient, reliable UV LEDs

The performance of the UV LED improves by trimming its dislocation density, boosting light extraction and enhancing thermal management.