Source: Semiconductor Today, 15.11.2019

Germany-funded ‘ForMikro-GoNext’ project investigating vertical gallium oxide devices for power electronics

In the recently launched joint project ‘ForMikro-GoNext’ - funded by Germany’s Federal Ministry of Education and Research (BMBF) with about €2m over 4 years - the Leibniz-Institut für Kristallzüchtung (IKZ), the Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik (FBH), the University of Bremen and industrial partners ABB Power Grids Switzerland Ltd and Aixtron SE are investigating beta-gallium oxide (β-Ga2O3) using a new vertical device architectures to exploit its properties for transistors more effectively.
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