Patents

"Vorrichtung zur punktförmigen Fokussierung von Strahlung"
DE 10 2006 027 126 B3


"Optisches Element und Verfahren zu dessen Herstellung"
DE 10 2004 052 857 B4


"Optoelektronisches Element und Verfahren zur kohärenten Kopplung von aktiven Bereichen optoelektronischer Elemente"
DE 10 2004 038 283 B4


"Microwave Antenna for Flip-Chip Semiconductor Modules"
DE 10 2004 014 018 B3       EP 1 726 063 B1       US 7,612,728 B2
EP validiert in FR, GB


"Method for the Production of a Bragg Grating in a Semiconductor Layer Sequence by Etching and Semiconductor Element"
DE 102 00 360 B4       EP 1 464 098 B1
EP validiert in GB, DE, CH, SE, IE, NL, FI, FR


"Method for the Passivation of the Mirror-Type Surfaces of Optical Semiconductor Elements"
DE 102 21 952 B4        EP 1 514 335 B1        US 7,338,821 B2
EP validiert in CH, FI, FR, GB


"Laser Resonators Comprising Mode-Selective Phase Structures"
EP 1 295 371 B1        US 6,920,160 B2       JP 4785327 B2
EP validiert in GB, FR, DE, FI


"Microplasma Array"
JP 5188815        US 8,545,764 B2


"Method for Producing Vertical Electrical Contact Connections in Semiconductor Wafers"
US 8,158,514,B2       JP 5080456


"Device and Method for the Generation of Terahertz Radiation"
DE 10 2006 041 728 B4        EP 2 057 720 B1
EP validiert in FR, GB


"Method for Producing Through-Contacts in Semi-Conductor Wafers via Production of Through-Plated Holes"
JP 5123185        US 8,455,355 B2


"Device for Doubling the Frequency of Laser Radiation"
DE 10 2007 063 492 B4        EP 2 235 590 B1
EP validiert in CH, DE, DK, FR, GB, IE


"Method for the Production of c-plane oriented GaN Substrates or AlxGa1-xN Substrates"
EP 1 841 902 B1
EP validiert in DE


"Method and Device for Producing and Detecting a Raman Spectrum"
US 7,864,311 B2        DE 10 2005 028 268 B4       EP 1 891 408 B1
EP validiert in AT, CH, FR, GB, DE


"Method for Producing a Metallization Having Two Multiple Alternating Metallization Layers for at least One Contact Pad and Semiconductor Wafer Having Said Metallization for at least One Contact Pad"
DE 10 2009 013 921 B3        US 8,648,466 B2


"Method for Generating and for Detecting a Raman Spectrum"
DE 10 2009 029 648 B3        US 8,310,672 B2        EP 2 480 868 B1
EP validiert in DK, FR, SE, GB, CH


"Device, Probe, and Method for the Galvanically Decoupled Transmission of a Measuring Signal"
DE 10 2005 061 683 B4        US 7,893,683 B2        EP 1 966 615 B1
EP validiert in FR, GB


"Semiconductor Component and Associated Production Method"
US 8,003,996 B2        EP 2 095 433 B1
EP validiert in DE, GB, CH


"Optoelectronic semiconductor element"
EP 2 262 067 B1
EP validiert in DE, CH, GB, FR


"Optical Bank and Method for Producing the Optical Bank"
JP 5677420 B2       US 8,659,815 B2        KR 10-1572945 B1       EP 2 440 968 B1
EP validiert in DE, CH, DK, FR, GB


"P-Contact and Light-Emitting Diode for the Ultraviolet Spectral Range"
JP 5689466 B2        KR 10-1642276        US 9,331,246 B2        EP 2 454 762 B1
EP validiert in AT, BE, DE, CH, ES, FR, GB, IE, IT, NL


"Scalable Construction for Lateral Semiconductor Components having High Current-Carrying Capacities"
US 8,901,671 B2       EP 2 534 685 B1       JP 5738322 B2
EP validiert in DE, BE, AT, FR, GB, NL


"Self-Adjusting Gate BIAS Network for Field Effect Transistors"
US 8,324,971 B2


"Diode Laser"
DE 10 2011 006 198 B4       US 8,867,586 B2


"Miniaturizable Plasma Source"
DE 10 2010 001 395 B4       EP 2 529 601 B1       US 8,796,934 B2
EP validiert in AT, CH, FR, GB, IT, PL


"Diode Laser and Method for Manufacturing a High-Efficiency Diode Laser"
DE 10 2011 086 744 B3       US 8,846,425 B2


"Broad Area Diode Laser with High Efficiency and Small Far-Field Divergence"
US 8,537,869 B2


"Vorrichtung und Verfahren zur Erzeugung eines Plasmas"
DE 10 2012 204 447 B4       EP 2 642 833 A2
EP validiert in GB, FR


"Semiconductor Component with Field Plate Structure and Method for Producing the Same"
JP 5512287       US 8,866,191 B2       EP 2 135 286 B1
EP validiert in DE, FR, GB


"Laser Diode with High Efficiency"
US 9,343,873 B2       EP 2 617 110 B1
EP validiert in AT, CH, FI, FR, GB, IE, IT, DE


"Photodetector for Ultraviolet Radiation, having a High Sensitivity and a Low Dark Current"
DE 10 2011 075 103 B4       US 9,431,557 B2


"Diode Laser and Laser Resonator for a Diode Laser having Improved Lateral Beam Quality"
US 8,675,705 B2       EP 2 467 909 B1
EP validiert in CH, DE, FR, SE


"Two-Cavity Surface-Emitting Laser"
US 8,824,518 B2


"High-Efficiency Diode Laser"
US 8,798,109 B2       EP 2 666 213 B1
EP validiert in CH, DE, FI, FR, IE, GB, IT


"Auto-Heterodyne Receiver"
US 9,100,113 B2


"System for Frequency Conversion, Semiconductor Device and Method for Operating and Manufacturing the Same"
US 9,008,145 B2       EP 2 650 985 B1
EP validiert in DE, AT, CH, FI, FR


"Light-Conducting Device, Device Having a Light-Conducting Device, and Means for Emitting Linear Parallel Light Beams"
DE 10 2014 203 479 B3       EP 3 111 267 B1       JP 6403792 B2       US 10,295,831 B2
EP validiert in DE, CH, FR, GB, IE, NL, SE


"Semiconductor Device with Heat Removal Structure and Related Production Method"
US 8,994,036 B2       EP 2 654 078 B1
EP validiert in DE, FR, GB, SE


"Semiconductor Layer Structure"
US 8,809,968 B2       DE 10 2012 207 501 B4       EP 2 662 896 B1
EP validiert in DE, BE, FR, GB, IT


"Device and Method for Selecting Optical Pulses"
DE 10 2012 209 485 B4       US 9,448,423 B2       EP 2 672 311 B1
EP validiert in DE, FR, GB


"Device and Method for Selective Transmission of an Optical Signal"
US 8,559,098 B2       DE 10 2008 056 096 B4


"Device Having an Arrangement of Optical Elements"
DE 10 2012 216 164 B4       US 9,563,061 B2       JP 6255022 B2       EP 2 895 844 B1
EP validiert in DE, CH, DK, FI, GB, IT


"Photodetektor und Vorrichtung zur Desinfektion von Wasser diesen umfassend"
DE 10 2014 225 632 B3


"Optisches Gitter für Littrow-Aufstellung und optische Anordnung unter Verwendung des optischen Gitters"
DE 10 2012 208 772 B4


"UV LED with Tunnel-injection Layer"
US 9,705,030 B2


"Method for Forming a Metal Contact on a Surface of a Semiconductor, and Device with a Metal Contact"
EP 3 084 808 B1       DE 10 2013 226 270 B3       KR 10-1831216       US 9,768,356 B2       JP 6511451 B2
EP validiert in DE, FR, GB, IE, PL


"Strahlungsdetektor und Verfahren zu dessen Herstellung"
DE 10 2017 103 687 B3


"Vorrichtung zur Ansteuerung eines selbstleitenden n-Kanal Endstufenfeldeffekttransisitors"
DE 10 2017 108 828 B3