1 W semiconductor based laser module with a narrow linewidth emitting near 1064 nm

S. Spießbergera, M. Schiemangkb, A. Sahma, A. Wichta, H. Wenzela, J. Frickea, and G. Erberta

Published in:

Proc. SPIE, vol. 7953, no. 795311 (2011).

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Abstract:

We demonstrate a compact high-power master oscillator (MO) power amplifier (PA) laser module emitting near 1064 nm. The module is micro-integrated on a footprint of 50 x 10mm2. The oscillator is a distributed Bragg reflector laser optimized for narrow linewidth operation. The amplifier consists of a ridge waveguide entry and a tapered section. The module features stable single-mode narrow linewidth emission at an output power of 1 W and can be tuned mode-hop free by 450 GHz.

a Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
b Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin, Germany

Keywords:

narrow linewidth, master oscillator power amplifier (MOPA), distributed Bragg reflector (DBR) laser, semiconductor laser, coherent optical communication, coherence.